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NRVUS2BA Equivalent & Substitute Parts
Part Overview
The NRVUS2BA is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 1.5 A average rectified current in a surface-mount DO-214AC (SMA) package. This component is classified as Last Time Buy, indicating that onsemi has discontinued or will discontinue production. The part is qualified to AEC-Q101 automotive standards and complies with ROHS3 and REACH requirements.
Due to the Last Time Buy status, identifying equivalent and substitute parts is necessary for design continuity and procurement planning. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts offer compatible performance within the same application envelope.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 1.5 | A |
| Voltage - Forward (Vf) (Max) @ If | 1 | V @ 1.5 A |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 100 V |
| Capacitance @ Vr, F | 50 | pF @ 4V, 1MHz |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Package / Case | DO-214AC, SMA | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature - Junction | -55 to 150 | °C |
| Grade | Automotive | — |
| Qualification | AEC-Q101 | — |
Substitute Part Grouping Explanation
Substitution of the NRVUS2BA is determined by the following critical parameters:
Voltage Rating: All substitute parts must maintain a minimum DC reverse voltage rating of 100 V to ensure safe operation in the original circuit.
Current Rating: The average rectified current must be sufficient for the application. Parts rated at 1.5 A or higher are acceptable; parts rated below 1.5 A are limited substitutes.
Package and Mounting: All substitutes use the DO-214AC (SMA) surface-mount package, ensuring mechanical and thermal compatibility.
Speed Classification: The NRVUS2BA is classified as Fast Recovery (≤ 500ns). Substitutes with Fast Recovery characteristics maintain switching performance; Standard Recovery substitutes (> 500ns) represent a performance trade-off.
Reverse Recovery Time (trr): The 50 ns specification is critical for high-frequency applications. Substitutes with equal or lower trr values preserve performance; higher trr values indicate slower switching.
Temperature Range: The -55°C to 150°C junction temperature range is maintained across all substitutes.
Automotive Qualification: AEC-Q101 certification is present in the main part and most substitutes, ensuring reliability in automotive environments.
Substitutes are grouped into two categories:
Parametric Equivalents: Parts with identical electrical specifications (US2BA, HS2BA, HS2BA R3G).
Similar Parts: Parts with compatible but not identical specifications, including variations in current rating, forward voltage, or recovery time (BYG22BHE3_A/H, S1B-M3/61T, S1BHE3_A/H, S2BA-13-F, US1B-13-F).
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) [V] | trr [ns] | Speed | Ir @ Vr [µA] | C @ Vr [pF] | Package | Temp Range [°C] | AEC-Q101 | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NRVUS2BA | onsemi | 100 | 1.5 | 1.0 | 50 | Fast Recovery | 5 | 50 | DO-214AC | -55 to 150 | Yes | Last Time Buy |
| US2BA | Fairchild Semiconductor | 100 | 1.5 | 1.0 | 50 | Fast Recovery | 5 | 50 | DO-214AC | -55 to 150 | Yes | Active |
| HS2BA | Taiwan Semiconductor Corporation | 100 | 1.5 | 1.0 | 50 | Fast Recovery | 5 | 50 | DO-214AC | -55 to 150 | No | Active |
| HS2BA R3G | Taiwan Semiconductor Corporation | 100 | 1.5 | 1.0 | 50 | Fast Recovery | 5 | 50 | DO-214AC | -55 to 150 | No | Discontinued at DiGi Electronics |
| BYG22BHE3_A/H | Vishay General Semiconductor - Diodes Division | 100 | 2.0 | 1.1 | 25 | Fast Recovery | 1 | — | DO-214AC | -55 to 150 | Yes | Active |
| S1B-M3/61T | Vishay General Semiconductor - Diodes Division | 100 | 1.0 | 1.1 | 1800 | Standard Recovery | 1 | 12 | DO-214AC | -55 to 150 | No | Active |
| S1BHE3_A/H | Vishay General Semiconductor - Diodes Division | 100 | 1.0 | 1.1 | 1800 | Standard Recovery | 1 | 12 | DO-214AC | -55 to 150 | Yes | Active |
| S2BA-13-F | Diodes Incorporated | 100 | 1.5 | 1.15 | — | Standard Recovery | 5 | 20 | DO-214AC | -65 to 150 | No | Active |
| US1B-13-F | Diodes Incorporated | 100 | 1.0 | 1.0 | 50 | Fast Recovery | 5 | 20 | DO-214AC | -65 to 150 | No | Active |
Engineering Selection Recommendations
Primary Equivalent Selection: US2BA (Fairchild Semiconductor) is the recommended primary equivalent. It maintains identical electrical specifications to the NRVUS2BA, including 100 V reverse voltage, 1.5 A current rating, 1.0 V forward voltage, 50 ns reverse recovery time, and Fast Recovery speed classification. US2BA is in Active product status and carries AEC-Q101 automotive qualification, ensuring continued availability and automotive-grade reliability.
Secondary Equivalent Selection: HS2BA (Taiwan Semiconductor Corporation) provides identical electrical specifications and is in Active status. However, HS2BA does not carry AEC-Q101 qualification. This part is suitable for non-automotive applications or where automotive qualification is not required.
Higher Current Alternative: BYG22BHE3_A/H (Vishay General Semiconductor - Diodes Division) offers 2.0 A current rating with identical 100 V reverse voltage and Fast Recovery speed. This part features a lower reverse recovery time (25 ns) and lower reverse leakage current (1 µA), providing improved switching performance. BYG22BHE3_A/H carries AEC-Q101 qualification and is in Active status. This part is suitable for applications requiring higher current capacity or improved switching characteristics.
Lower Current Alternatives: S1BHE3_A/H and S1B-M3/61T (Vishay General Semiconductor - Diodes Division) are rated for 1.0 A current, below the NRVUS2BA specification. These parts are suitable only for applications where the circuit current requirement does not exceed 1.0 A. S1BHE3_A/H carries AEC-Q101 qualification; S1B-M3/61T does not. Both use Standard Recovery speed classification (1.8 µs trr), which is significantly slower than the NRVUS2BA.
Diodes Incorporated Alternatives: S2BA-13-F and US1B-13-F are in Active status but do not carry AEC-Q101 qualification. S2BA-13-F matches the 1.5 A current rating but uses Standard Recovery speed. US1B-13-F is rated for 1.0 A and uses Fast Recovery speed. Both parts support extended temperature range (-65°C to 150°C) compared to the NRVUS2BA (-55°C to 150°C).
Discontinued Part: HS2BA R3G is discontinued at DiGi Electronics and should not be selected for new designs despite identical electrical specifications.
Frequently Asked Questions (FAQ)
Q: Can US2BA directly replace NRVUS2BA in all applications?
A: Yes. US2BA is a parametric equivalent with identical voltage rating (100 V), current rating (1.5 A), forward voltage (1.0 V @ 1.5 A), reverse recovery time (50 ns), and speed classification (Fast Recovery). Both parts use the DO-214AC package and operate across -55°C to 150°C. US2BA carries AEC-Q101 qualification, matching the automotive-grade requirement of NRVUS2BA.
Q: What is the difference between Fast Recovery and Standard Recovery diodes?
A: Fast Recovery diodes have reverse recovery times of 50 ns or less, enabling faster switching and reduced switching losses in high-frequency applications. Standard Recovery diodes have reverse recovery times exceeding 500 ns, resulting in slower switching. The NRVUS2BA is Fast Recovery (50 ns). Substitutes with Standard Recovery (such as S1B-M3/61T at 1.8 µs) are not suitable for applications requiring fast switching performance.
Q: Can I use a 1.0 A rated diode in place of the 1.5 A NRVUS2BA?
A: No. Using a lower-rated diode creates a reliability risk. If the circuit draws 1.5 A, a 1.0 A diode will operate at or above its maximum rating, causing excessive heat generation and shortened component life. Parts such as S1BHE3_A/H and US1B-13-F are rated for 1.0 A and are suitable only for circuits designed for 1.0 A or less.
Q: Can I use a 2.0 A rated diode in place of the 1.5 A NRVUS2BA?
A: Yes. BYG22BHE3_A/H is rated for 2.0 A at 100 V and is electrically compatible. Higher current rating provides design margin and does not degrade performance. BYG22BHE3_A/H also features improved switching characteristics (25 ns trr versus 50 ns) and lower reverse leakage (1 µA versus 5 µA), making it suitable for applications requiring enhanced performance.
Q: Does package type affect substitution?
A: All substitute parts listed use the DO-214AC (SMA) surface-mount package, ensuring mechanical and thermal compatibility with the NRVUS2BA. Packaging variants (Bulk, Tape & Reel, Cut Tape) affect procurement and handling but do not affect electrical performance or board-level compatibility.
Q: Is AEC-Q101 qualification required for my application?
A: AEC-Q101 qualification is mandatory for automotive applications and recommended for high-reliability industrial applications. US2BA and BYG22BHE3_A/H carry AEC-Q101 certification. HS2BA, S2BA-13-F, and US1B-13-F do not. For non-automotive applications, non-qualified parts are acceptable if other electrical specifications match.
Q: What is the impact of forward voltage differences?
A: The NRVUS2BA specifies 1.0 V forward voltage at 1.5 A. Some substitutes specify 1.1 V or 1.15 V at their rated current. Forward voltage differences of 0.1 V to 0.15 V result in slightly higher power dissipation but do not affect circuit functionality in most applications. For power-sensitive designs, verify that the higher forward voltage does not exceed thermal or efficiency requirements.
Q: Can I use HS2BA R3G as a substitute?
A: HS2BA R3G is discontinued at DiGi Electronics and should not be selected for new designs. Although it provides identical electrical specifications to NRVUS2BA, its discontinued status creates procurement risk and supply uncertainty. Use HS2BA (non-R3G variant) or US2BA instead.
Q: What is the significance of reverse leakage current differences?
A: The NRVUS2BA specifies 5 µA reverse leakage at 100 V. BYG22BHE3_A/H specifies 1 µA, and S1B variants specify 1 µA. Lower reverse leakage reduces standby power consumption and heat generation. For most applications, this difference is negligible. For low-power or precision analog circuits, lower leakage is beneficial.
Q: Are there temperature range considerations for substitution?
A: The NRVUS2BA operates from -55°C to 150°C junction temperature. S2BA-13-F and US1B-13-F support -65°C to 150°C, providing extended low-temperature operation. All other substitutes match the -55°C to 150°C range. Extended temperature range does not affect substitution compatibility; it provides additional design margin for extreme environments.
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