NRVUS110VT3G Equivalent & Substitute Parts

Part Overview

The NRVUS110VT3G is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 2 A average rectified current in a surface mount SMB (DO-214AA) package. This device is classified as "Not For New Designs" and is intended for legacy system support and maintenance applications. The automotive-grade qualification (AEC-Q101) and fast recovery characteristics make it suitable for power supply and switching applications requiring reliable rectification performance.

Due to its discontinued design status, equivalent and substitute parts are necessary for ongoing production support, inventory management, and system maintenance where component availability or supply chain considerations require alternative sourcing.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 1 A	mV
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	2	µA @ 100 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Package / Case	DO-214AA, SMB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-65°C ~ 175°C	°C
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the NRVUS110VT3G is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2 A
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Acceptable Variation Parameters:

Voltage - Forward (Vf) (Max) @ If: Minor variations permitted within rectifier diode design tolerances
Reverse Recovery Time (trr): Variations within fast recovery classification acceptable
Current - Reverse Leakage @ Vr: Variations within specified operating conditions acceptable
Operating Temperature - Junction: Minimum range must encompass application requirements

Compliance Parameters:

RoHS Status: ROHS3 Compliant required
Moisture Sensitivity Level (MSL): 1 (Unlimited) required
Automotive Grade and AEC-Q101 qualification recommended for automotive applications

Substitute parts are grouped into two categories: the manufacturer-recommended upgrade (NRVUS110VT3G-GA01) and functionally equivalent alternatives from other manufacturers (ESH2BHE3_A/H and ESH2B-E3/5BT).

Parameter Comparison

Parameter	NRVUS110VT3G	NRVUS110VT3G-GA01	ESH2BHE3_A/H	ESH2B-E3/5BT
Manufacturer	onsemi	onsemi	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division
Product Status	Not For New Designs	Active	Active	Active
Voltage - DC Reverse (Vr) (Max)	100 V	100 V	100 V	100 V
Current - Average Rectified (Io)	2 A	2 A	2 A	2 A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 1 A	875 mV @ 1 A	930 mV @ 2 A	930 mV @ 2 A
Reverse Recovery Time (trr)	35 ns	35 ns	25 ns	35 ns
Current - Reverse Leakage @ Vr	2 µA @ 100 V	2 µA @ 100 V	10 µA @ 50 V	2 µA @ 100 V
Package / Case	DO-214AA, SMB	DO-214AA, SMB	DO-214AA, SMB	DO-214AA, SMB
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction	-65°C ~ 175°C	-65°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C
Grade	Automotive	Automotive	Automotive	—
Qualification	AEC-Q101	AEC-Q101	AEC-Q101	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

NRVUS110VT3G-GA01 (onsemi): This is the manufacturer-recommended direct replacement. It maintains identical electrical specifications, automotive-grade qualification, AEC-Q101 certification, and extended operating temperature range (-65°C ~ 175°C). The part is in active production status, ensuring long-term availability. Selection of this part is appropriate for all applications currently using NRVUS110VT3G.

ESH2BHE3_A/H (Vishay): This substitute provides automotive-grade qualification and AEC-Q101 certification with equivalent core electrical performance. The reverse recovery time is improved (25 ns versus 35 ns), and the operating temperature range is -55°C ~ 175°C. The reverse leakage specification differs (10 µA @ 50 V versus 2 µA @ 100 V). This part is suitable for automotive applications where the lower minimum operating temperature of -55°C is acceptable.

ESH2B-E3/5BT (Vishay): This substitute meets all mandatory electrical and package requirements with identical reverse recovery time (35 ns) and reverse leakage specification (2 µA @ 100 V). However, it lacks automotive-grade designation and AEC-Q101 qualification. The operating temperature range is -55°C ~ 175°C. This part is suitable for non-automotive applications or where automotive qualification is not required.

Selection should prioritize NRVUS110VT3G-GA01 for direct replacement in existing designs. Alternative Vishay parts are appropriate when supply constraints exist or when application requirements permit deviation from automotive-grade specifications.

Frequently Asked Questions (FAQ)

Q: Can NRVUS110VT3G-GA01 be used as a direct replacement for NRVUS110VT3G?

A: Yes. NRVUS110VT3G-GA01 is the manufacturer-recommended successor with identical electrical specifications, package, and certifications. It is a direct pin-compatible and functionally equivalent replacement.

Q: What is the primary difference between the onsemi and Vishay substitute options?

A: NRVUS110VT3G-GA01 maintains automotive-grade qualification and AEC-Q101 certification identical to the original part. ESH2BHE3_A/H and ESH2B-E3/5BT are Vishay alternatives with equivalent core rectification performance but different certification profiles. ESH2BHE3_A/H retains automotive qualification; ESH2B-E3/5BT does not.

Q: Are there temperature range differences between substitute parts?

A: Yes. NRVUS110VT3G and NRVUS110VT3G-GA01 operate from -65°C to 175°C. ESH2BHE3_A/H and ESH2B-E3/5BT operate from -55°C to 175°C. Applications requiring operation below -55°C must use NRVUS110VT3G or NRVUS110VT3G-GA01.

Q: Do all substitute parts have identical forward voltage characteristics?

A: No. NRVUS110VT3G and NRVUS110VT3G-GA01 specify 875 mV @ 1 A. ESH2BHE3_A/H and ESH2B-E3/5BT specify 930 mV @ 2 A. This difference reflects different measurement conditions and is within acceptable rectifier diode design variation.

Q: Can ESH2B-E3/5BT be used in automotive applications?

A: ESH2B-E3/5BT lacks automotive-grade designation and AEC-Q101 qualification. It is not recommended for automotive applications requiring these certifications. Use NRVUS110VT3G-GA01 or ESH2BHE3_A/H for automotive compliance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (NRVUS110VT3G-GA01, ESH2BHE3_A/H, and ESH2B-E3/5BT) are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the reverse recovery time difference between ESH2BHE3_A/H and other options?

A: ESH2BHE3_A/H has a reverse recovery time of 25 ns, compared to 35 ns for NRVUS110VT3G, NRVUS110VT3G-GA01, and ESH2B-E3/5BT. The faster recovery time may provide improved switching performance in high-frequency applications but does not affect basic rectification functionality.

Q: Is the SMB package identical across all substitute parts?

A: Yes. All parts use the DO-214AA (SMB) surface mount package with identical mechanical and electrical interface characteristics, ensuring direct PCB compatibility.

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