NP80N06MLG-S18-AY N-Channel 60V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The NP80N06MLG-S18-AY is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 60V drain-to-source voltage and 80A continuous drain current in a Through Hole TO-220-3 package. This device is classified as Obsolete, making identification of functionally equivalent active alternatives necessary for ongoing production and design continuity. The part operates at a maximum junction temperature of 175°C and dissipates up to 115W under case temperature conditions. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the TO-220-3 package form factor.

Substiute Parts

NP80N06MLG-S18-AY

Renesas Electronics CorporationIn Stock: 689NP80N06MLG-S18-AY Datasheet

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AOT2610L

Alpha & Omega Semiconductor Inc.In Stock: 1380AOT2610L Datasheet

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CSD18534KCS

Texas InstrumentsIn Stock: 10338CSD18534KCS Datasheet

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IPP052N06L3GXKSA1

Infineon TechnologiesIn Stock: 955IPP052N06L3GXKSA1 Datasheet

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IPP084N06L3GXKSA1

Infineon TechnologiesIn Stock: 4795IPP084N06L3GXKSA1 Datasheet

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IRF1010EZPBF

Infineon TechnologiesIn Stock: 15422IRF1010EZPBF Datasheet

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IRF1018EPBF

Infineon TechnologiesIn Stock: 16747IRF1018EPBF Datasheet

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IRF3205PBF

Infineon TechnologiesIn Stock: 95134IRF3205PBF Datasheet

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STP80NF70

STMicroelectronicsIn Stock: 40509STP80NF70 Datasheet

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TK40E06N1,S1X

Toshiba Semiconductor and StorageIn Stock: 1040TK40E06N1,S1X Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the NP80N06MLG-S18-AY is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
• Continuous Drain Current (Id): Must equal or exceed 80A at case temperature (Tc)
• Package / Case: Must be TO-220-3 or compatible TO-220 variant
• Mounting Type: Through Hole required
• Gate Voltage Range (Vgs Max): Must accommodate ±20V
• Operating Temperature: Must support 175°C junction temperature minimum

Secondary Compatibility Parameters:

• On-State Resistance (Rds On): Lower values indicate improved performance; values within 8.6 mOhm ± 20% are considered equivalent
• Gate Charge (Qg): Lower values reduce switching losses; values within 128 nC ± 30% are acceptable
• Input Capacitance (Ciss): Lower values reduce gate drive requirements; values within 6900 pF ± 30% are acceptable
• Power Dissipation: Must support minimum 115W at case temperature
• RoHS and MSL Compliance: Must match or exceed the original specification

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with active product status) and Functional Alternatives (meeting primary criteria with minor parameter variations or obsolete status).

Parameter Comparison

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

The IPP052N06L3GXKSA1 (Infineon OptiMOS™ series) is the primary recommended substitute. This part maintains identical electrical specifications to the NP80N06MLG-S18-AY: 60V Vdss, 80A continuous drain current at case temperature, and 115W power dissipation. The IPP052N06L3GXKSA1 features superior on-state resistance (5.0 mOhm vs. 8.6 mOhm), lower gate charge (50 nC vs. 128 nC), and reduced input capacitance (8400 pF vs. 6900 pF), resulting in improved switching efficiency. The part carries Active product status, ROHS3 compliance, and MSL 1 rating, ensuring long-term availability and regulatory alignment. Inventory availability is 849 units.

Secondary Equivalent (Alternative Substitute):

The CSD18534KCS (Texas Instruments NexFET™ series) provides enhanced performance with 100A continuous drain current at case temperature and 107W power dissipation, exceeding the original specification. This part delivers superior on-state resistance (9.5 mOhm), significantly lower gate charge (24 nC), and reduced input capacitance (1880 pF), enabling faster switching and reduced gate drive power. The CSD18534KCS maintains 60V Vdss, Active product status, and ROHS3 compliance. Inventory availability is 10,265 units, providing superior supply security.

Functional Alternatives (Current-Limited Applications):

The IRF1010EZPBF and IRF1018EPBF (Infineon HEXFET® series) are suitable for applications where 75A to 79A continuous drain current is acceptable. Both parts maintain 60V Vdss, Active product status, and ROHS3 compliance. The IRF1010EZPBF provides 75A at 140W power dissipation; the IRF1018EPBF provides 79A at 110W power dissipation. These alternatives feature higher gate threshold voltage (4.0V vs. 2.5V) and increased gate charge (69–86 nC), requiring adjusted gate drive circuits.

Lower-Current Alternatives (Derating Applications):

The IPP084N06L3GXKSA1 (Infineon OptiMOS™, Obsolete) and AOT2610L (Alpha & Omega, Active) are suitable only for applications tolerating reduced continuous drain current (50A and 55A respectively). These parts maintain 60V Vdss and TO-220-3 packaging but provide lower power dissipation (79W and 75W). The AOT2610L carries Active status and is preferred over the obsolete IPP084N06L3GXKSA1 for new designs.

Marginal Alternative (Temperature-Constrained Applications):

The TK40E06N1,S1X (Toshiba U-MOSVIII-H series) is suitable only for applications with reduced current requirements (40A) and lower operating temperature limits (150°C maximum junction temperature vs. 175°C). This part is not recommended as a direct substitute due to current and thermal limitations.

Product Status Considerations:

The original NP80N06MLG-S18-AY is Obsolete. For new designs and ongoing production, selection must prioritize Active-status alternatives: IPP052N06L3GXKSA1, CSD18534KCS, IRF1010EZPBF, IRF1018EPBF, and AOT2610L. Obsolete alternatives (IPP084N06L3GXKSA1) are acceptable only for legacy system maintenance where supply chain continuity is established.

Frequently Asked Questions (FAQ)

Q: Can the IPP052N06L3GXKSA1 directly replace the NP80N06MLG-S18-AY without circuit modification?

A: Yes. The IPP052N06L3GXKSA1 maintains identical Vdss (60V), Id (80A at Tc), and power dissipation (115W at Tc) specifications. Both parts operate within ±20V gate voltage range and support 175°C maximum junction temperature. The TO-220-3 package is mechanically and electrically compatible. No circuit modification is required for direct substitution.

Q: What is the primary advantage of the CSD18534KCS over the original NP80N06MLG-S18-AY?

A: The CSD18534KCS provides enhanced current capability (100A vs. 80A at case temperature) and superior switching characteristics. Gate charge is reduced from 128 nC to 24 nC, and on-state resistance is improved from 8.6 mOhm to 9.5 mOhm. These improvements reduce switching losses and gate drive power requirements. The part maintains 60V Vdss and 175°C operating temperature, making it suitable for higher-performance applications.

Q: Why do the IRF1010EZPBF and IRF1018EPBF have higher gate threshold voltage (4.0V) compared to the original part (2.5V)?

A: Gate threshold voltage (Vgs(th)) is a manufacturing characteristic that varies by device family and process technology. The HEXFET® series (IRF1010EZPBF, IRF1018EPBF) operates at 4.0V threshold, while the original Renesas part operates at 2.5V. This difference requires gate drive circuits to supply higher voltage levels to achieve full on-state conduction. Existing gate drive circuits designed for 2.5V threshold may require adjustment or replacement.

Q: Is the AOT2610L suitable as a substitute if the application requires 80A continuous current?

A: No. The AOT2610L is rated for 55A continuous drain current at case temperature, which is 25A below the original specification. Using this part in an 80A application would exceed its rated current capacity, resulting in excessive junction temperature rise, reduced device lifetime, and potential thermal runaway. The AOT2610L is suitable only for applications tolerating 55A or lower continuous current.

Q: What is the significance of the lower input capacitance (Ciss) in the CSD18534KCS compared to the NP80N06MLG-S18-AY?

A: Input capacitance (Ciss) directly affects gate charge requirements and switching speed. The CSD18534KCS exhibits 1880 pF input capacitance versus 6900 pF in the original part. Lower input capacitance reduces the charge required to drive the gate, enabling faster switching transitions and reduced gate drive power dissipation. This characteristic is advantageous in high-frequency switching applications and reduces thermal stress on gate drive circuits.

Q: Can the TK40E06N1,S1X be used in applications requiring 175°C maximum junction temperature operation?

A: No. The TK40E06N1,S1X is rated for 150°C maximum junction temperature, which is 25°C below the original specification. Applications requiring sustained operation at 175°C junction temperature will exceed this device's thermal rating. The TK40E06N1,S1X is suitable only for applications with maximum junction temperature limits of 150°C or lower.

Q: What is the inventory status of recommended substitutes?

A: The IPP052N06L3GXKSA1 has 849 units in stock. The CSD18534KCS has 10,265 units in stock, providing superior supply security. The IRF1010EZPBF has 15,326 units in stock. The IRF1018EPBF has 16,697 units in stock. The AOT2610L has 1,290 units in stock. All recommended Active-status alternatives maintain adequate inventory levels for production continuity.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts (IPP052N06L3GXKSA1, CSD18534KCS, IRF1010EZPBF, IRF1018EPBF, and AOT2610L) carry ROHS3 compliance certification, matching the original NP80N06MLG-S18-AY specification. This ensures regulatory alignment for applications subject to RoHS directives.

Q: What is the difference between TO-220-3 and TO-220AB package designations?

A: TO-220-3 and TO-220AB are mechanically and electrically compatible package variants. Both feature three leads (Gate, Drain, Source) in a Through Hole configuration with identical pin spacing and thermal characteristics. The designations reflect different manufacturer nomenclature conventions. Parts specified as TO-220AB (IRF1010EZPBF, IRF1018EPBF) are directly compatible with TO-220-3 footprints.