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NJVMJD47T4G Equivalent & Substitute Parts
Part Overview
The NJVMJD47T4G is an NPN bipolar junction transistor manufactured by onsemi, rated for 250V collector-emitter breakdown voltage and 1A maximum collector current. This surface mount device is housed in a DPAK (TO-252-3) package and is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 1.56W. The part maintains Active product status and is RoHS3 compliant. Substitute parts are identified when equivalent electrical specifications and mechanical packaging allow direct replacement in circuit designs without functional degradation.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 250 | V |
| Current - Collector (Ic) (Max) | 1 | A |
| Power - Max | 1.56 | W |
| Frequency - Transition | 10 | MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V | — |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A | — |
| Current - Collector Cutoff (Max) | 200 | µA |
| Operating Temperature Range | -65 to 150 | °C (TJ) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitute parts for the NJVMJD47T4G are identified based on strict equivalence across the following critical parameters:
- Transistor Type: NPN configuration
- Voltage Rating: 250V collector-emitter breakdown voltage (maximum)
- Current Rating: 1A maximum collector current
- Power Dissipation: 1.56W maximum
- Frequency Response: 10MHz transition frequency
- DC Current Gain: 30 (minimum) at specified bias conditions
- Saturation Characteristics: 1V maximum Vce at rated conditions
- Package: TO-252-3 DPAK surface mount form factor
- Compliance: RoHS3 compliant, REACH unaffected status
Parts meeting all these parameters are classified as parametric equivalents and direct substitutes. No deviations from specified electrical or mechanical characteristics are permitted for substitution classification.
Parameter Comparison
| Parameter | NJVMJD47T4G | MJD47T4G | Unit |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | — |
| Transistor Type | NPN | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 250 | 250 | V |
| Current - Collector (Ic) (Max) | 1 | 1 | A |
| Power - Max | 1.56 | 1.56 | W |
| Frequency - Transition | 10 | 10 | MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V | 30 @ 300mA, 10V | — |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A | 1V @ 200mA, 1A | — |
| Current - Collector Cutoff (Max) | 200 | 200 | µA |
| Operating Temperature Range | -65 to 150 | -65 to 150 | °C (TJ) |
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | — |
| Mounting Type | Surface Mount | Surface Mount | — |
| Product Status | Active | Active | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
The MJD47T4G is a direct parametric equivalent to the NJVMJD47T4G. Both parts are manufactured by onsemi and share identical electrical specifications, thermal ratings, and mechanical packaging. Both maintain Active product status, ensuring continued availability and manufacturing support. Both parts carry RoHS3 compliance and REACH unaffected status, meeting current environmental and regulatory requirements for electronic component procurement.
Selection between these parts may be based on inventory availability, lead time, or supply chain considerations, as no technical differentiation exists between them. The NJVMJD47T4G currently maintains higher inventory levels (35,200 pieces) compared to the MJD47T4G (18,668 pieces).
Frequently Asked Questions (FAQ)
Q: Can the MJD47T4G replace the NJVMJD47T4G in existing designs?
A: Yes. The MJD47T4G is a parametric equivalent with identical electrical specifications, thermal characteristics, and DPAK surface mount packaging. Direct substitution is supported without circuit modification.
Q: Are there differences in the base product numbers?
A: The NJVMJD47T4G has base product number NJVMJD47, while the MJD47T4G has base product number MJD47. These designations reflect different product lines within onsemi's portfolio, but the "T4G" suffix indicates identical electrical and mechanical specifications for both parts.
Q: What is the significance of the DPAK package designation?
A: DPAK (TO-252-3) is a surface mount package with two leads plus a thermal tab. Both substitute parts use this identical package, ensuring PCB footprint compatibility and thermal management characteristics remain unchanged during substitution.
Q: Do both parts meet the same compliance standards?
A: Yes. Both the NJVMJD47T4G and MJD47T4G are RoHS3 compliant, REACH unaffected, and carry MSL Level 1 (Unlimited) moisture sensitivity ratings. Regulatory and environmental compliance is equivalent.
Q: What are the critical electrical parameters that define substitution eligibility?
A: Substitution eligibility is determined by matching: NPN transistor type, 250V collector-emitter breakdown voltage, 1A maximum collector current, 1.56W power dissipation, 10MHz transition frequency, 30 minimum DC current gain at specified bias, and 1V maximum Vce saturation at rated conditions.
Q: Is there a performance difference between these parts?
A: No. Both parts are manufactured to identical specifications and exhibit equivalent performance characteristics across all rated operating conditions and temperature ranges (-65°C to 150°C junction temperature).
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