NJVMJD243T4G Equivalent & Substitute Parts

Part Overview

The NJVMJD243T4G is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This Surface Mount device operates at maximum collector current of 4 A and collector-emitter breakdown voltage of 100 V, with a maximum power dissipation of 1.4 W. The part is currently in Active product status and is RoHS3 compliant. Equivalent and substitute parts are identified to provide design flexibility, accommodate supply chain variations, and support alternative packaging or sourcing requirements while maintaining electrical and mechanical compatibility.

Substiute Parts

NJVMJD243T4G
onsemiIn Stock: 39254NJVMJD243T4G Datasheet
NJVMJD243T4G
Current Part
MJD243T4G
onsemiIn Stock: 20112MJD243T4G Datasheet
MJD243T4G
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V
Power - Max 1.4 W
Frequency - Transition 40 MHz
Operating Temperature Range -65 to 150 °C (TJ)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the NJVMJD243T4G are identified based on electrical parameter equivalence and mechanical compatibility. The substitution criteria are strictly defined by the following parameters:

  • Transistor Type: NPN configuration
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
  • Power - Max: 1.4 W
  • Frequency - Transition: 40MHz
  • Operating Temperature Range: -65°C ~ 150°C (TJ)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant

Parts meeting all these electrical and mechanical specifications are classified as direct equivalents and may be substituted without circuit redesign.

Parameter Comparison

Parameter NJVMJD243T4G MJD243T4G
Manufacturer onsemi onsemi
Category Transistors, Bipolar (BJT) Transistors, Bipolar (BJT)
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V 40 @ 200mA, 1V
Power - Max 1.4 W 1.4 W
Frequency - Transition 40MHz 40MHz
Operating Temperature Range -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active
Packaging Format Tape & Reel (TR) Cut Tape (CT) & Digi-Reel®

Engineering Selection Recommendations

The MJD243T4G is a direct electrical and mechanical equivalent to the NJVMJD243T4G. Both parts are manufactured by onsemi, share identical electrical specifications across all critical parameters, and are housed in the same DPAK package. Both parts maintain Active product status and are ROHS3 compliant with unlimited moisture sensitivity rating.

The primary distinction between these parts is packaging format: the NJVMJD243T4G is supplied in Tape & Reel (TR) format, while the MJD243T4G is available in Cut Tape (CT) and Digi-Reel® format. This difference affects procurement and assembly processes but does not impact electrical performance or circuit functionality.

Selection between these equivalents should be based on supply chain availability, packaging requirements for manufacturing processes, and inventory management practices. Both parts are suitable for direct substitution in applications requiring NPN transistors with 4 A collector current, 100 V breakdown voltage, and 1.4 W power dissipation in Surface Mount DPAK configuration.

Frequently Asked Questions (FAQ)

Q: Can MJD243T4G be used as a direct replacement for NJVMJD243T4G?

A: Yes. The MJD243T4G meets all electrical and mechanical specifications of the NJVMJD243T4G. Both parts are NPN transistors with identical current, voltage, power, and frequency ratings, and both use the DPAK package. The parts are electrically interchangeable.

Q: What is the difference between NJVMJD243T4G and MJD243T4G?

A: The electrical specifications are identical. The difference is in packaging format: NJVMJD243T4G is supplied in Tape & Reel (TR) format, while MJD243T4G is supplied in Cut Tape (CT) and Digi-Reel® format. This affects how the parts are packaged and handled during manufacturing but does not affect circuit performance.

Q: Are both parts RoHS compliant?

A: Yes. Both NJVMJD243T4G and MJD243T4G are ROHS3 compliant and have unlimited moisture sensitivity rating (MSL 1).

Q: What are the critical electrical parameters for substitution?

A: Substitution is valid when the following parameters match: Transistor Type (NPN), Collector Current (4 A), Collector-Emitter Breakdown Voltage (100 V), Vce Saturation (600mV @ 100mA, 1A), Collector Cutoff Current (100nA), DC Current Gain (40 @ 200mA, 1V), Power Rating (1.4 W), Transition Frequency (40MHz), and Operating Temperature Range (-65°C to 150°C).

Q: Can these parts be used in high-temperature applications?

A: Yes. Both parts are rated for operating junction temperatures from -65°C to 150°C (TJ), supporting high-temperature applications within this range.

Q: What is the DPAK package?

A: DPAK (also designated TO-252-3 or SC-63) is a Surface Mount package with 2 leads plus a tab for thermal management. This package is suitable for moderate power dissipation applications and provides efficient heat transfer through the tab connection.

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