NJL1302D Equivalent & Substitute Parts

Part Overview

The NJL1302D is a through-hole PNP bipolar junction transistor manufactured by onsemi, rated for 260 V collector-emitter breakdown voltage and 15 A maximum collector current in a TO-264 package. This device is designed for high-voltage, high-current switching and amplification applications with a maximum power dissipation of 200 W.

The NJL1302D carries an obsolete product status. Locating equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor topology.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	15	A
Voltage - Collector Emitter Breakdown (Max)	260	V
Vce Saturation (Max) @ Ib, Ic	3 V @ 1 A, 10 A	—
Current - Collector Cutoff (Max)	50	µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 5 A, 5 V	—
Power - Max	200	W
Frequency - Transition	30	MHz
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-264-5	—

Substitute Part Grouping Explanation

Substitution of the NJL1302D is determined by electrical and mechanical parameter equivalence within the PNP bipolar transistor category. The following parameters establish substitution validity:

Electrical Parameters (Must Match):

Maximum collector current: 15 A
Maximum collector-emitter breakdown voltage: 260 V
Maximum power dissipation: 200 W
Transition frequency: 30 MHz
DC current gain (hFE): 75 @ 5 A, 5 V (minimum)
Vce saturation: 3 V @ 1 A, 10 A (maximum)
Collector cutoff current: 50 µA (ICBO) (maximum)
Operating temperature range: -65°C to 150°C

Mechanical Parameters (Must Match):

Mounting type: Through Hole
Package designation: TO-264-5
Pin configuration: 5-pin

Substitute parts must satisfy all electrical and mechanical parameters to ensure functional and physical compatibility within existing circuit designs and PCB layouts.

Parameter Comparison

Parameter	NJL1302D	NJL1302DG	Unit
Manufacturer	onsemi	onsemi	—
Transistor Type	PNP	PNP + Diode (Isolated)	—
Current - Collector (Ic) (Max)	15	15	A
Voltage - Collector Emitter Breakdown (Max)	260	260	V
Vce Saturation (Max) @ Ib, Ic	3 V @ 1 A, 10 A	3 V @ 1 A, 10 A	—
Current - Collector Cutoff (Max)	50	50	µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 5 A, 5 V	75 @ 5 A, 5 V	—
Power - Max	200	200	W
Frequency - Transition	30	30	MHz
Operating Temperature Range	-65 to 150	-65 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-264-5	TO-264-5	—
Product Status	Obsolete	Active	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

NJL1302DG is the direct substitute for NJL1302D based on the following criteria:

Electrical Equivalence: The NJL1302DG maintains identical electrical specifications across all critical parameters: 15 A maximum collector current, 260 V breakdown voltage, 200 W power rating, 30 MHz transition frequency, and matching saturation and gain characteristics. The integrated isolated diode in the NJL1302DG does not alter the primary transistor functionality and provides additional circuit protection capability.

Product Status: The NJL1302D is obsolete, while the NJL1302DG maintains active product status with current manufacturing support and availability.

Regulatory Compliance: The NJL1302DG is ROHS3 compliant, whereas the NJL1302D is non-compliant. For applications subject to RoHS regulations, the NJL1302DG satisfies compliance requirements.

Physical Compatibility: Both devices utilize identical TO-264-5 through-hole packaging, ensuring direct PCB footprint compatibility without layout modifications.

Supply Availability: The NJL1302DG is currently in stock with active inventory levels, supporting immediate procurement and production continuity.

Frequently Asked Questions (FAQ)

Q: Can NJL1302DG directly replace NJL1302D in existing circuit designs?

A: Yes. The NJL1302DG maintains electrical parameter equivalence across all specifications including current rating, voltage rating, power dissipation, frequency response, and gain characteristics. The TO-264-5 package ensures identical pin configuration and PCB footprint compatibility. The integrated isolated diode does not interfere with standard transistor operation.

Q: What is the functional difference between NJL1302D and NJL1302DG?

A: The primary difference is the integrated isolated diode in the NJL1302DG. This diode provides additional circuit protection without affecting the core PNP transistor characteristics. All electrical parameters remain identical.

Q: Are there packaging differences between these parts?

A: Both devices use the TO-264-5 through-hole package. The NJL1302D is supplied in standard packaging, while the NJL1302DG is supplied in tube packaging. This difference does not affect electrical performance or PCB mounting.

Q: Why is the NJL1302D listed as obsolete?

A: The NJL1302D has reached end-of-life status in the manufacturer's product portfolio. The NJL1302DG represents the active continuation of this product line with enhanced regulatory compliance.

Q: Does the NJL1302DG meet RoHS requirements?

A: Yes. The NJL1302DG is ROHS3 compliant. The NJL1302D is not RoHS compliant. For applications requiring RoHS certification, the NJL1302DG is the appropriate selection.

Q: Are the thermal characteristics identical between NJL1302D and NJL1302DG?

A: Yes. Both devices operate across the identical temperature range of -65°C to 150°C (junction temperature) and maintain the same 200 W maximum power dissipation rating.

Q: Can I use NJL1302DG in high-frequency switching applications?

A: Yes. The NJL1302DG maintains the 30 MHz transition frequency specification, supporting high-frequency switching and amplification applications within this frequency range.

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