NIF9N05CLT1G N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NIF9N05CLT1G is an N-Channel MOSFET manufactured by onsemi, rated for 59V drain-to-source voltage with 2.6A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The part operates across an industrial temperature range of -55°C to 150°C and dissipates a maximum of 1.69W at ambient temperature.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	59	V
Continuous Drain Current (Id) @ 25°C	2.6	A
Rds On (Max) @ 2.6A, 10V	125	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	2.5	V
Power Dissipation (Max)	1.69	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-223 (TO-261)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the NIF9N05CLT1G is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Vdss rating equal to or greater than 59V to ensure safe operation in the original circuit. Parts rated at 60V or higher satisfy this requirement.

Current Handling Capacity: The continuous drain current (Id) of substitute parts must equal or exceed 2.6A at the specified temperature condition to support the same load requirements.

On-Resistance (Rds On): The maximum on-resistance at rated current and gate voltage must be comparable to or lower than the original 125mOhm specification to maintain similar power dissipation and thermal characteristics.

Package and Pinout: All substitute parts must use the SOT-223 (TO-261) surface mount package with identical pinout to ensure direct PCB compatibility without layout modifications.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating range to maintain functionality across all environmental conditions.

Gate Threshold Voltage: The Vgs(th) specification must be compatible with the circuit's gate drive voltage to ensure reliable switching operation.

Substitute parts are grouped into two categories: Direct Equivalents (matching all critical parameters with active product status) and Functional Alternatives (meeting electrical requirements with minor parameter variations or different product status).

Parameter Comparison

Parameter	NIF9N05CLT1G	NCV8440ASTT1G	BSP320SH6327XTSA1	IRFL110TRPBF	STN3NF06L	STN4NF06L	ZXMN6A11GTA
Manufacturer	onsemi	onsemi	Infineon Technologies	Vishay Siliconix	STMicroelectronics	STMicroelectronics	Diodes Incorporated
Vdss (V)	59	59	60	100	60	60	60
Id @ 25°C (A)	2.6	2.6	2.9	1.5	4	4	3.1
Rds On (Max) (mOhm)	125 @ 2.6A, 10V	110 @ 2.6A, 10V	120 @ 2.9A, 10V	540 @ 900mA, 10V	100 @ 1.5A, 10V	100 @ 1.5A, 10V	120 @ 2.5A, 10V
Vgs(th) @ Id (V)	2.5 @ 100µA	1.9 @ 100µA	4 @ 20µA	4 @ 250µA	2.8 @ 250µA	2.8 @ 250µA	3 @ 250µA
Gate Charge Qg (nC)	7 @ 4.5V	4.5 @ 4.5V	12 @ 10V	8.3 @ 10V	9 @ 5V	9 @ 5V	5.7 @ 10V
Ciss (Max) (pF)	250 @ 35V	155 @ 35V	340 @ 25V	180 @ 25V	340 @ 25V	340 @ 25V	330 @ 40V
Power Dissipation (Max) (W)	1.69	1.69	1.8	2 / 3.1	3.3	3.3	2
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223
Product Status	Obsolete	Active	Last Time Buy	Active	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: NCV8440ASTT1G

The NCV8440ASTT1G from onsemi is the preferred direct equivalent for the NIF9N05CLT1G. Both devices share identical voltage and current ratings (59V, 2.6A) and the same power dissipation specification (1.69W). The NCV8440ASTT1G offers improved on-resistance (110mOhm versus 125mOhm) and lower gate charge (4.5nC versus 7nC), resulting in superior switching efficiency. The part is currently in active production status with ROHS3 compliance and MSL-1 moisture sensitivity rating, providing superior supply chain availability and handling flexibility compared to the obsolete NIF9N05CLT1G.

Secondary Substitutes: STN3NF06L and STN4NF06L

The STMicroelectronics STN3NF06L and STN4NF06L are functionally compatible alternatives rated for 60V and 4A continuous drain current. Both parts exceed the original current specification and feature lower on-resistance (100mOhm) at lower measurement current (1.5A). These devices are suitable for applications where higher current capacity provides design margin. Both are active products with ROHS3 compliance and MSL-1 ratings.

Tertiary Substitute: ZXMN6A11GTA

The Diodes Incorporated ZXMN6A11GTA provides 60V, 3.1A operation with 120mOhm on-resistance and is actively produced with ROHS3 compliance. This part offers a balanced alternative with current rating between the primary equivalent and the higher-current STMicroelectronics options.

Not Recommended: IRFL110TRPBF and BSP320SH6327XTSA1

The Vishay IRFL110TRPBF is rated for 100V operation with only 1.5A continuous current, making it unsuitable for direct substitution due to insufficient current capacity. The Infineon BSP320SH6327XTSA1 is classified as Last Time Buy, indicating discontinued production and limited future availability, despite meeting electrical requirements.

Frequently Asked Questions (FAQ)

Q: Can the NCV8440ASTT1G directly replace the NIF9N05CLT1G without circuit modifications?

A: Yes. The NCV8440ASTT1G maintains identical voltage (59V) and current (2.6A) ratings with the same SOT-223 package and pinout. The improved electrical characteristics (lower Rds On and gate charge) provide enhanced performance without requiring design changes.

Q: Why is the IRFL110TRPBF listed as a substitute if it has lower current rating?

A: The IRFL110TRPBF was included in the original substitute list provided for the NIF9N05CLT1G. However, its 1.5A continuous current rating is insufficient for applications requiring the full 2.6A specification. This part is not recommended for direct substitution.

Q: What is the significance of the MSL rating difference between NIF9N05CLT1G and substitute parts?

A: The NIF9N05CLT1G carries MSL-3 (168 hours), requiring moisture bake-out procedures before soldering. All recommended substitutes carry MSL-1 (unlimited), eliminating moisture sensitivity handling requirements and reducing manufacturing process complexity.

Q: Are STN3NF06L and STN4NF06L interchangeable with each other?

A: Yes. Both parts share identical electrical specifications (60V, 4A, 100mOhm Rds On) and the same SOT-223 package. They are functionally equivalent alternatives from the same STMicroelectronics STripFET II series.

Q: Can I use a higher-voltage rated MOSFET as a substitute?

A: Yes, provided all other parameters meet or exceed the original specification. The IRFL110TRPBF (100V rating) is electrically compatible from a voltage perspective but lacks sufficient current capacity. Higher voltage ratings do not degrade performance in lower-voltage applications.

Q: What is the impact of lower gate threshold voltage in the NCV8440ASTT1G?

A: The NCV8440ASTT1G features Vgs(th) of 1.9V compared to 2.5V in the original part. This lower threshold voltage enables faster switching at lower gate drive voltages, improving efficiency. Circuits designed for the original part will operate reliably with this substitute.

Q: Why do some substitutes show different Rds On measurement conditions?

A: On-resistance varies with drain current and gate voltage. Comparisons must account for measurement conditions. The STN3NF06L and STN4NF06L specify Rds On at 1.5A (lower than the original 2.6A), while the ZXMN6A11GTA specifies it at 2.5A, closer to the original measurement point.

Q: Is ROHS3 compliance required for my application?

A: ROHS3 compliance is mandatory for products sold in the European Union and many other markets. All recommended active substitutes carry ROHS3 certification. The original NIF9N05CLT1G does not specify RoHS status, which may present regulatory compliance issues for new designs.

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