NE5230DG Equivalent & Substitute Parts

Part Overview

The NE5230DG is a general-purpose operational amplifier manufactured by onsemi, housed in an 8-SOIC surface mount package. This device features rail-to-rail output capability and is designed for linear amplification applications requiring single-circuit configurations. The NE5230DG is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, legacy system maintenance, and production continuity.

Substiute Parts

NE5230DG

onsemiIn Stock: 2458NE5230DG Datasheet

Current PartRFQ

TS1851IDT

STMicroelectronicsIn Stock: 12888TS1851IDT Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the NE5230DG is determined by strict alignment of electrical and mechanical parameters. The primary substitute identified is the TS1851IDT manufactured by STMicroelectronics. Substitution validity is established through the following criteria:

Critical Matching Parameters:

• Amplifier Type: General Purpose
• Number of Circuits: 1
• Output Type: Rail-to-Rail
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• Moisture Sensitivity Level: 1 (Unlimited)

Performance Parameters Within Acceptable Range:

• Slew Rate: 0.25 V/µs (identical)
• Gain Bandwidth Product: 630 kHz (within operational tolerance of 600 kHz baseline)
• Current - Input Bias: 16 nA (lower than 40 nA, acceptable for general-purpose applications)
• Voltage - Input Offset: 1 mV (higher than 400 µV, acceptable for general-purpose applications)
• Current - Supply: 162 µA (lower than 1.1 mA, acceptable)
• Current - Output / Channel: 48 mA (higher than 32 mA, acceptable)
• Voltage - Supply Span (Min): 1.8 V (identical)
• Voltage - Supply Span (Max): 6 V (lower than 15 V, requires circuit design verification for supply voltage compatibility)

Parameter Comparison

Engineering Selection Recommendations

The TS1851IDT is the identified substitute for the NE5230DG based on functional equivalence and parameter alignment. The following factors support this substitution:

Product Status: The NE5230DG is obsolete, while the TS1851IDT is active. Active product status ensures ongoing availability, manufacturing support, and compliance with current regulatory standards.

Compliance & Certifications: The TS1851IDT is ROHS3 compliant, meeting current environmental and hazardous substance restrictions. Both devices are REACH unaffected and carry identical ECCN and HTSUS classifications, confirming regulatory equivalence.

Electrical Compatibility: Both devices share identical package geometry (8-SOIC), mounting type (surface mount), and core electrical characteristics (general-purpose amplifier, rail-to-rail output, 0.25 V/µs slew rate). The TS1851IDT demonstrates improved performance in input bias current (16 nA vs. 40 nA) and reduced supply current (162 µA vs. 1.1 mA).

Supply Voltage Consideration: The TS1851IDT maximum supply voltage is 6 V, compared to 15 V for the NE5230DG. Applications requiring supply voltages exceeding 6 V must be redesigned or alternative substitutes identified.

Operating Temperature Range: The TS1851IDT supports extended operating temperature range (-40°C to 125°C) compared to the NE5230DG (0°C to 70°C), providing broader environmental applicability.

Frequently Asked Questions (FAQ)

Q: Can the TS1851IDT directly replace the NE5230DG in all applications?

A: Direct replacement is valid for applications operating at supply voltages of 6 V or lower. Applications requiring supply voltages between 6 V and 15 V require circuit redesign or identification of alternative substitutes. Pin configuration and package geometry are identical, enabling direct PCB substitution where voltage requirements are met.

Q: What is the significance of the TS1851IDT being active while the NE5230DG is obsolete?

A: Active product status indicates the TS1851IDT is in current production with ongoing manufacturer support, quality assurance, and regulatory compliance. Obsolete status for the NE5230DG indicates discontinued production and potential unavailability of future inventory. Substitution to an active product ensures long-term design sustainability.

Q: How do the input offset voltage differences affect substitution suitability?

A: The TS1851IDT exhibits 1 mV input offset voltage compared to 400 µV for the NE5230DG. For general-purpose amplifier applications, this difference is within acceptable tolerance. Precision applications requiring input offset voltage below 1 mV require evaluation of alternative substitutes or circuit compensation techniques.

Q: Are there package or mounting differences between these devices?

A: Both devices use identical 8-SOIC surface mount packaging (0.154" width, 3.90mm). No PCB layout modifications or reflow process changes are required for physical substitution.

Q: What compliance advantages does the TS1851IDT provide?

A: The TS1851IDT is ROHS3 compliant, meeting current environmental regulations for hazardous substance restrictions. Both devices share identical REACH unaffected status and ECCN/HTSUS classifications, confirming regulatory equivalence for export and supply chain purposes.

Q: How does the extended operating temperature range of the TS1851IDT affect substitution?

A: The TS1851IDT supports -40°C to 125°C operation compared to 0°C to 70°C for the NE5230DG. This extended range enables use in industrial, automotive, and extreme environment applications where the NE5230DG would be unsuitable. For standard commercial temperature range applications (0°C to 70°C), both devices are equivalent.

Q: What is the impact of reduced supply current in the TS1851IDT?

A: The TS1851IDT draws 162 µA compared to 1.1 mA for the NE5230DG, representing approximately 85% reduction in quiescent current. This reduction benefits battery-powered and low-power applications by extending operational life and reducing thermal dissipation.