NDS9947 Equivalent & Substitute Parts

Part Overview

The NDS9947 is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications requiring 20V drain-source voltage capability and 3.5A continuous drain current. The device features logic level gate operation and is housed in an 8-SOIC package with a maximum power dissipation of 900mW.

The NDS9947 is classified as obsolete product status. Identification of equivalent substitute components is necessary to support ongoing design requirements, system maintenance, and procurement continuity where original inventory becomes unavailable.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	3.5	A
On-State Resistance (Rds On)	100	mOhm @ 3.5A, 10V
Gate Threshold Voltage (Vgs(th))	3	V @ 250µA
Gate Charge (Qg)	13	nC @ 10V
Input Capacitance (Ciss)	542	pF @ 10V
Maximum Power Dissipation	900	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 P-Channel (Dual)
Package Type	8-SOIC

Substitute Part Grouping Explanation

Substitution of the NDS9947 is determined by equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

Drain to Source Voltage (Vdss): 20V minimum
Continuous Drain Current (Id): 3.5A or greater
Configuration: Dual P-Channel
FET Feature: Logic Level Gate operation
Operating Temperature Range: -55°C to 150°C or greater

Mechanical Equivalence Criteria:

Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)

The FDMA6023PZT meets all electrical equivalence criteria with a Vdss of 20V, Id of 3.6A (exceeding the 3.5A requirement), dual P-channel configuration, and logic level gate feature. Both devices operate across the -55°C to 150°C temperature range. The substitute part is classified as active product status, ensuring continued availability and support.

Parameter Comparison

Parameter	NDS9947 (Main Part)	FDMA6023PZT (Substitute)	Unit
Manufacturer	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Active
Drain to Source Voltage (Vdss)	20	20	V
Continuous Drain Current (Id) @ 25°C	3.5	3.6	A
On-State Resistance (Rds On)	100 @ 3.5A, 10V	60 @ 3.6A, 4.5V	mOhm
Gate Threshold Voltage (Vgs(th))	3 @ 250µA	1.5 @ 250µA	V
Gate Charge (Qg)	13 @ 10V	17 @ 4.5V	nC
Input Capacitance (Ciss)	542 @ 10V	885 @ 10V	pF
Maximum Power Dissipation	900	700	mW
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Configuration	2 P-Channel (Dual)	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Logic Level Gate
Mounting Type	Surface Mount	Surface Mount
Package Type	8-SOIC (0.154", 3.90mm Width)	6-UDFN Exposed Pad (6-MicroFET 2x2)

Engineering Selection Recommendations

The FDMA6023PZT is a qualified substitute for the NDS9947 based on electrical parameter equivalence and active product status. The substitute part exceeds the minimum drain current requirement (3.6A versus 3.5A) and maintains identical voltage ratings and temperature operating range.

The FDMA6023PZT is classified as active product status, providing assured long-term availability and manufacturing support compared to the obsolete NDS9947. Both devices carry identical ECCN classification (EAR99), confirming equivalent export control status.

Package differences exist between the main part (8-SOIC) and substitute (6-UDFN Exposed Pad). PCB layout modifications are required to accommodate the different package footprint and pin configuration. The substitute part features a smaller form factor (6-MicroFET 2x2 package) compared to the 8-SOIC package of the main part.

Frequently Asked Questions (FAQ)

Q: Can the FDMA6023PZT directly replace the NDS9947 without circuit modifications?

A: Electrical substitution is valid based on voltage, current, and temperature ratings. However, package differences require PCB layout redesign. The FDMA6023PZT uses a 6-UDFN Exposed Pad package (6-MicroFET 2x2) while the NDS9947 uses an 8-SOIC package. Pin assignments and footprints differ and must be verified against device datasheets before implementation.

Q: What are the key electrical advantages of the FDMA6023PZT substitute?

A: The FDMA6023PZT provides lower on-state resistance (60mOhm at 3.6A, 4.5V versus 100mOhm at 3.5A, 10V) and lower gate threshold voltage (1.5V versus 3V), resulting in improved switching efficiency and reduced gate drive requirements. The substitute part also exceeds the continuous drain current specification (3.6A versus 3.5A).

Q: Are there any electrical parameters where the NDS9947 performs better than the FDMA6023PZT?

A: The NDS9947 features lower input capacitance (542pF versus 885pF at 10V) and lower gate charge (13nC versus 17nC), which may provide advantages in high-frequency switching applications. The NDS9947 also supports higher maximum power dissipation (900mW versus 700mW).

Q: What is the significance of the different package types?

A: The NDS9947 uses an 8-SOIC package with a 0.154" (3.90mm) width, while the FDMA6023PZT uses a 6-UDFN Exposed Pad package (6-MicroFET 2x2). The UDFN package is significantly smaller, offering space savings but requiring different PCB layout and assembly processes. Pin count and configuration differ between packages.

Q: Are both parts compliant with the same regulatory standards?

A: Both the NDS9947 and FDMA6023PZT carry identical ECCN classification (EAR99), confirming equivalent export control status. The NDS9947 is REACH Unaffected. Specific REACH compliance status for the FDMA6023PZT should be verified with the manufacturer.

Q: What inventory considerations apply to these parts?

A: The NDS9947 is classified as obsolete product status with 17,994 pieces in stock. The FDMA6023PZT is active product status with 4,821 pieces in stock, providing assured long-term availability and manufacturing support.

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