NDS9936 Equivalent & Substitute Parts

Part Overview

The NDS9936 is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This device features a 30V drain-to-source voltage rating with 5A continuous drain current capability and 900mW maximum power dissipation. The logic level gate configuration enables direct interface with standard digital logic circuits.

The NDS9936 is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal operating range while accommodating the same surface mount package footprint.

Substiute Parts

NDS9936

onsemiIn Stock: 15226NDS9936 Datasheet

Current PartRFQ

FDS6930B

onsemiIn Stock: 60223FDS6930B Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the NDS9936 is determined by strict adherence to the following electrical and mechanical parameters:

Mandatory Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• Configuration: Must be 2 N-Channel (Dual) topology
• Package: Must be 8-SOIC with 0.154" (3.90mm) width
• FET Feature: Must support Logic Level Gate operation
• Operating Temperature Range: Must span -55°C to 150°C (TJ)

Performance Parameters (Substitute Must Meet or Exceed):

• Continuous Drain Current (Id) @ 25°C: Minimum 5A
• Maximum Power Dissipation: Minimum 900mW
• Gate Threshold Voltage (Vgs(th)): Maximum 3V @ 250µA

Acceptable Variation:

• On-Resistance (Rds On): Lower values are acceptable; higher values require thermal analysis
• Gate Charge (Qg): Lower values indicate improved switching performance
• Input Capacitance (Ciss): Lower values indicate reduced gate drive requirements

The FDS6930B meets all mandatory parameters and exceeds performance specifications in current capacity (5.5A vs. 5A) and on-resistance efficiency (38mOhm vs. 50mOhm), establishing it as a direct electrical and mechanical substitute.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FDS6930B

The FDS6930B is the direct substitute for the obsolete NDS9936. Both devices are manufactured by onsemi and share identical electrical ratings for voltage, current, and thermal operating range. The FDS6930B demonstrates superior performance characteristics across multiple parameters:

• Current capacity increased from 5A to 5.5A
• On-resistance reduced from 50mOhm to 38mOhm at equivalent gate voltage
• Gate charge reduced from 35nC to 3.8nC, indicating faster switching response
• Input capacitance reduced from 525pF to 412pF, reducing gate drive power requirements

Both devices maintain identical package footprint (8-SOIC), logic level gate configuration, and thermal specifications, enabling direct pin-compatible substitution without circuit redesign.

Compliance and Regulatory Status:

The FDS6930B carries Last Time Buy status from onsemi, indicating controlled availability. The device maintains ROHS3 compliance, REACH unaffected status, and EAR99 export classification, matching the regulatory profile of the NDS9936. Moisture sensitivity level remains at MSL 1 (Unlimited), requiring no special handling modifications.

Inventory Availability:

The FDS6930B is available in significantly higher quantities (60,200 pieces) compared to the NDS9936 (15,165 pieces), supporting both immediate requirements and long-term production planning.

Frequently Asked Questions (FAQ)

Q: Can the FDS6930B be used as a direct replacement for the NDS9936 without circuit modifications?

A: Yes. The FDS6930B is pin-compatible and electrically equivalent to the NDS9936. Both devices use identical 8-SOIC packaging with matching pinout, voltage ratings, and logic level gate specifications. No circuit redesign is required for substitution.

Q: What are the key differences between the NDS9936 and FDS6930B?

A: The FDS6930B provides improved performance specifications: higher continuous drain current (5.5A vs. 5A), lower on-resistance (38mOhm vs. 50mOhm), significantly reduced gate charge (3.8nC vs. 35nC), and lower input capacitance (412pF vs. 525pF). These improvements result in reduced power dissipation and faster switching response while maintaining identical voltage and thermal ratings.

Q: Are there any thermal management differences between these devices?

A: Both devices share identical maximum power dissipation (900mW) and operating temperature range (-55°C to 150°C junction temperature). The FDS6930B's lower on-resistance may reduce junction temperature rise under equivalent current loading, potentially improving thermal margin in power-limited applications.

Q: What is the significance of the FDS6930B's Last Time Buy status?

A: Last Time Buy status indicates onsemi has established a final production run with a defined cutoff date for new orders. This status does not affect the device's technical performance or reliability. Current inventory levels (60,200 pieces) support extended production requirements. Long-term designs should establish supply chain planning accordingly.

Q: Do the NDS9936 and FDS6930B have identical moisture sensitivity requirements?

A: Yes. Both devices are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures apply without special desiccant or baking requirements.

Q: Are there any compliance or export restrictions affecting the FDS6930B?

A: No. The FDS6930B maintains identical regulatory status to the NDS9936: ROHS3 compliant, REACH unaffected, EAR99 export classification, and HTSUS code 8541.21.0095. No additional compliance documentation is required for substitution.

Q: What packaging options are available for the FDS6930B?

A: The FDS6930B is supplied in Cut Tape (CT) and Digi-Reel® packaging formats, supporting both manual assembly and automated pick-and-place operations. The 8-SOIC package dimensions (0.154" width, 3.90mm) remain consistent across all packaging options.

Q: Can the FDS6930B be used in applications where the NDS9936 was previously specified?

A: Yes. The FDS6930B's superior electrical characteristics (higher current capacity, lower on-resistance, reduced gate charge) make it suitable for all applications previously designed for the NDS9936. The improved performance may provide additional design margin in thermally or power-constrained applications.