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NDS356AP P-Channel MOSFET 30V 1.1A Equivalent & Substitute Parts
Part Overview
The NDS356AP is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 1.1A continuous drain current at 25°C. The device is packaged in SOT-23-3 (TO-236-3) surface mount configuration and dissipates 500mW maximum power. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The NDS356AP serves in low-power switching and load control applications requiring P-Channel MOSFET functionality in compact surface mount packages.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Current - Continuous Drain (Id) @ 25°C | 1.1 | A (Ta) |
| Rds On (Max) @ Id, Vgs | 200 | mOhm @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.4 | nC @ 5V |
| Vgs (Max) | ±20 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 | pF @ 10V |
| Power Dissipation (Max) | 500 | mW (Ta) |
| Operating Temperature | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the NDS356AP is determined by strict electrical and mechanical compatibility within the P-Channel MOSFET category. The following parameters establish substitution validity:
Critical Matching Parameters:
- FET Type: P-Channel (required)
- Technology: MOSFET (Metal Oxide) (required)
- Drain to Source Voltage (Vdss): 30V minimum (required)
- Package / Case: SOT-23-3 or TO-236-3 (required for mechanical fit)
- Operating Temperature Range: -55°C to 150°C (required)
- Mounting Type: Surface Mount (required)
Performance Parameters (allowable variation):
- Current - Continuous Drain (Id): 1.1A or greater
- Rds On (Max): 200mOhm or lower (lower is acceptable)
- Vgs(th) (Max): 2.5V or lower (lower is acceptable)
- Gate Charge (Qg): 4.4nC or lower (lower is acceptable)
- Input Capacitance (Ciss): 280pF or lower (lower is acceptable)
- Power Dissipation (Max): 500mW or greater (higher is acceptable)
Substitute parts must meet or exceed the NDS356AP electrical specifications while maintaining identical package and mounting characteristics. Parts with higher current ratings, lower on-resistance, or improved thermal performance are acceptable substitutes.
Parameter Comparison
| Parameter | NDS356AP | FDN352AP | NTR4502PT1G | NVTR4502PT1G | AO3403 | AO3409 | DMP3125L-7 | IRLML5103TRPBF | IRLML5203TRPBF | SI2303CDS-T1-GE3 |
|---|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor | onsemi | onsemi | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Diodes Incorporated | Infineon Technologies | Infineon Technologies | Vishay Siliconix |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Vdss (V) | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| Id @ 25°C (A) | 1.1 | 1.3 | 1.13 | 1.13 | 2.6 | 2.6 | 2.5 | 0.76 | 3 | 2.7 |
| Rds On (Max) @ 10V (mOhm) | 200 | 180 | 200 | 200 | 115 | 130 | 95 | 600 | 98 | 190 |
| Vgs(th) (Max) @ 250µA (V) | 2.5 | 2.5 | 3 | 3 | 1.4 | 3 | 2.1 | 1 | 2.5 | 3 |
| Gate Charge (Qg) (nC) | 4.4 | 1.9 | 10 | 10 | 7.2 | 9 | 3.1 | 5.1 | 14 | 8 |
| Vgs (Max) (V) | ±20 | ±25 | ±20 | ±20 | ±12 | ±20 | ±20 | ±20 | ±20 | ±20 |
| Ciss (Max) (pF) | 280 | 150 | 200 | 200 | 315 | 370 | 254 | 75 | 510 | 155 |
| Power Dissipation (Max) (mW) | 500 | 500 | 400 | 400 | 1400 | 1400 | 650 | 540 | 1250 | 1000 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Product Status | Obsolete | Active | Active | Active | Not For New Designs | Not For New Designs | Active | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | — | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Primary Substitutes (Active Product Status):
The FDN352AP (Fairchild Semiconductor) and SI2303CDS-T1-GE3 (Vishay Siliconix) are the preferred substitutes for the NDS356AP. Both devices are in active production status, meet all electrical specifications, and maintain SOT-23-3 package compatibility. The FDN352AP offers improved gate charge characteristics (1.9nC versus 4.4nC) and lower on-resistance (180mOhm versus 200mOhm). The SI2303CDS-T1-GE3 provides higher current capability (2.7A versus 1.1A) with comparable on-resistance and enhanced power dissipation (1W Ta).
The NTR4502PT1G and NVTR4502PT1G (both onsemi) are active alternatives with equivalent electrical performance. The NVTR4502PT1G includes AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade components.
Secondary Substitutes (Higher Current Capability):
The DMP3125L-7 (Diodes Incorporated), AO3403, and AO3409 (Alpha & Omega Semiconductor) provide higher current ratings (2.5A to 2.6A) with improved on-resistance characteristics. These parts are suitable for applications requiring enhanced current handling. The AO3403 and AO3409 are classified as "Not For New Designs" and should be used only for legacy system support or replacement applications.
Lower Current Alternative:
The IRLML5103TRPBF (Infineon Technologies) operates at 760mA continuous drain current, below the NDS356AP specification. This device is suitable only for applications with reduced current requirements and should not be selected as a direct substitute for the NDS356AP.
Compliance Considerations:
All recommended substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the NDS356AP environmental specifications. The NVTR4502PT1G provides additional automotive qualification (AEC-Q101) for applications requiring automotive-grade components.
Frequently Asked Questions (FAQ)
Q: Can the FDN352AP directly replace the NDS356AP in existing designs?
A: Yes. The FDN352AP meets all electrical and mechanical requirements for direct substitution. It maintains 30V Vdss rating, provides 1.3A continuous drain current (exceeding the 1.1A requirement), and is packaged in identical SOT-23-3 configuration. The FDN352AP is in active production status, addressing the obsolescence of the NDS356AP.
Q: What is the difference between NTR4502PT1G and NVTR4502PT1G?
A: Both devices are onsemi P-Channel MOSFETs with identical electrical specifications (30V, 1.13A, SOT-23-3). The NVTR4502PT1G includes AEC-Q101 automotive qualification and is designated for automotive applications. The NTR4502PT1G is the standard industrial version. Select NVTR4502PT1G for automotive or mission-critical applications requiring automotive-grade qualification.
Q: Why is the IRLML5103TRPBF not recommended as a primary substitute?
A: The IRLML5103TRPBF operates at 760mA continuous drain current, which is below the NDS356AP specification of 1.1A. While the device maintains 30V Vdss and SOT-23-3 packaging, it cannot support the full current requirements of applications designed for the NDS356AP. This device is suitable only for applications with reduced current demands.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All recommended substitute parts listed in this document are RoHS3 compliant, matching the environmental compliance of the NDS356AP. All devices maintain MSL 1 (Unlimited) moisture sensitivity rating.
Q: What is the significance of lower gate charge in the FDN352AP?
A: The FDN352AP exhibits gate charge of 1.9nC at 4.5V, compared to 4.4nC at 5V for the NDS356AP. Lower gate charge reduces switching losses and improves switching speed in gate-driven applications. This characteristic makes the FDN352AP advantageous in high-frequency switching circuits.
Q: Can higher-current devices like the AO3403 or DMP3125L-7 be used in place of the NDS356AP?
A: Yes. Devices with higher current ratings (2.5A to 2.6A) are acceptable substitutes for the NDS356AP. These parts provide improved thermal performance and lower on-resistance, making them suitable for applications requiring enhanced current handling or reduced power dissipation. However, verify that the application circuit can accommodate the different electrical characteristics, particularly lower threshold voltage in some variants.
Q: What packaging considerations apply to these substitutes?
A: All substitute parts listed maintain SOT-23-3 (TO-236-3, SC-59) surface mount packaging, ensuring mechanical compatibility with existing PCB layouts designed for the NDS356AP. No PCB redesign is required for package accommodation.
Q: Is the SI2303CDS-T1-GE3 suitable for high-temperature applications?
A: Yes. The SI2303CDS-T1-GE3 maintains the full operating temperature range of -55°C to 150°C (TJ), identical to the NDS356AP. The device is rated for 1W power dissipation at Ta and 2.3W at Tc, providing enhanced thermal performance in elevated temperature environments.
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