NDS352P P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NDS352P is a P-Channel MOSFET manufactured by onsemi, designed for surface mount applications in the SOT-23-3 package. This device operates at 20V drain-to-source voltage with 850mA continuous drain current and 500mW power dissipation. The NDS352P is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating the transition from obsolete to active product status.

Key Parameters

Parameter	NDS352P Specification
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss)	20 V
Continuous Drain Current (Id) @ 25°C	850 mA
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	350 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2.5 V @ 250 µA
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 5 V
Vgs (Max)	±12 V
Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 10 V
Operating Temperature Range	-55°C to 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-3 (TO-236-3, SC-59)
Product Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the NDS352P are classified based on strict adherence to the following electrical and mechanical compatibility criteria:

Direct Substitutes maintain identical or superior performance within the core operating parameters: P-Channel topology, SOT-23-3 surface mount package, 20V Vdss rating, and continuous drain current capability at or above 850mA. Direct substitutes must support the same gate voltage range and thermal operating window.

Similar Substitutes share the P-Channel topology and SOT-23-3 package but operate within modified electrical specifications. These parts are suitable when circuit design permits operation at reduced current ratings, lower power dissipation, or alternative gate charge characteristics while maintaining the 20V Vdss minimum requirement.

Key Parameters for Substitution Compatibility:

FET Type: P-Channel (mandatory)
Package: SOT-23-3 surface mount (mandatory)
Drain-to-Source Voltage (Vdss): 20V minimum
Continuous Drain Current (Id): 850mA or greater for direct substitution
Operating Temperature Range: -55°C to 150°C (TJ)
Power Dissipation: 500mW or greater for direct substitution

Parameter Comparison

Parameter	NDS352P (onsemi)	FDN352AP (Fairchild)	NTR1P02LT3G (onsemi)	NTR0202PLT1G (onsemi)
FET Type	P-Channel	P-Channel	P-Channel	P-Channel
Drain-to-Source Voltage (Vdss)	20 V	30 V	20 V	20 V
Continuous Drain Current (Id) @ 25°C	850 mA	1.3 A	1.3 A	400 mA
Power Dissipation (Max)	500 mW	500 mW	400 mW	225 mW
Rds On (Max) @ Id, Vgs	350 mOhm @ 1A, 10V	180 mOhm @ 1.3A, 10V	220 mOhm @ 750mA, 4.5V	800 mOhm @ 200mA, 10V
Vgs(th) (Max) @ Id	2.5 V @ 250 µA	2.5 V @ 250 µA	1.25 V @ 250 µA	2.3 V @ 250 µA
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 5 V	1.9 nC @ 4.5 V	5.5 nC @ 4 V	2.18 nC @ 10 V
Vgs (Max)	±12 V	±25 V	±12 V	±20 V
Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 10 V	150 pF @ 15 V	225 pF @ 5 V	70 pF @ 5 V
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

FDN352AP (Fairchild Semiconductor) is classified as a direct substitute for the NDS352P. This part maintains P-Channel topology and SOT-23-3 packaging with superior electrical performance: 30V Vdss (exceeds 20V requirement), 1.3A continuous drain current (exceeds 850mA requirement), and 500mW power dissipation (matches specification). The FDN352AP is manufactured under the PowerTrench® series and holds active product status, ensuring long-term availability and supply chain stability. The device is suitable for direct replacement in applications where the higher voltage rating and improved on-resistance characteristics provide design margin.

NTR1P02LT3G (onsemi) is classified as a similar substitute with enhanced current capability. This part maintains 20V Vdss and SOT-23-3 packaging with 1.3A continuous drain current (exceeds 850mA requirement). However, power dissipation is reduced to 400mW, and gate charge is increased to 5.5nC. The NTR1P02LT3G is RoHS3 compliant and holds active product status. This part is suitable for applications where higher current capacity is beneficial and the reduced power dissipation specification does not constrain circuit operation.

NTR0202PLT1G (onsemi) is classified as a similar substitute with reduced current capability. This part maintains 20V Vdss and SOT-23-3 packaging but provides only 400mA continuous drain current (below 850mA requirement) and 225mW power dissipation. The NTR0202PLT1G is RoHS3 compliant and holds active product status. This part is suitable only for applications where circuit current requirements do not exceed 400mA and where the reduced power dissipation is acceptable.

All substitute parts maintain the -55°C to 150°C operating temperature range and MSL 1 moisture sensitivity level of the original NDS352P. Selection should be based on specific circuit current and power dissipation requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDN352AP directly replace the NDS352P in all applications?

A: The FDN352AP is electrically compatible with the NDS352P for applications operating at or below 20V drain-to-source voltage and 850mA continuous drain current. The higher 30V Vdss rating and improved on-resistance (180mOhm versus 350mOhm) provide design margin. Both devices share the SOT-23-3 package and identical thermal operating range. Direct replacement is supported without circuit modification.

Q: What is the primary difference between the NTR1P02LT3G and NTR0202PLT1G?

A: The NTR1P02LT3G provides 1.3A continuous drain current and 400mW power dissipation, while the NTR0202PLT1G provides 400mA continuous drain current and 225mW power dissipation. Both maintain 20V Vdss and SOT-23-3 packaging. Selection depends on circuit current requirements. The NTR1P02LT3G is suitable for applications requiring current at or above 850mA; the NTR0202PLT1G is suitable only for applications below 400mA.

Q: Are all substitute parts available in the same packaging as the NDS352P?

A: Yes. All substitute parts (FDN352AP, NTR1P02LT3G, and NTR0202PLT1G) are manufactured in the SOT-23-3 surface mount package, identical to the NDS352P. Package designations include TO-236-3 and SC-59, which are equivalent package references. No PCB layout modification is required for substitution.

Q: What is the significance of the NDS352P being classified as obsolete?

A: Obsolete product status indicates that the NDS352P is no longer manufactured and existing inventory is limited. Substitute parts with active product status (FDN352AP, NTR1P02LT3G, NTR0202PLT1G) ensure long-term design support and supply chain continuity. Active products are manufactured to current specifications and are available through standard distribution channels.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the FET on and off. The NDS352P specifies 4nC @ 5V. The FDN352AP specifies 1.9nC @ 4.5V (lower switching energy), while the NTR1P02LT3G specifies 5.5nC @ 4V (higher switching energy). Lower gate charge reduces driver power consumption and enables faster switching. Higher gate charge may require stronger gate drive circuits. Selection depends on gate driver capability and switching frequency requirements.

Q: Are there compliance or certification differences between substitute parts?

A: The NTR1P02LT3G and NTR0202PLT1G are RoHS3 compliant. The FDN352AP compliance status is not specified in the provided data. All parts are REACH unaffected and classified under ECCN EAR99. Verify compliance requirements for specific applications before final part selection.

Q: Can the NTR0202PLT1G be used in applications designed for the NDS352P?

A: The NTR0202PLT1G is suitable only for applications where circuit current requirements do not exceed 400mA. The NDS352P is rated for 850mA continuous drain current. Using the NTR0202PLT1G in a circuit designed for 850mA operation will result in device thermal stress and potential failure. Verify circuit current requirements before substitution.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message