NDS335N MOSFET N-Channel 20V 1.7A Equivalent & Substitute Parts

Part Overview

The NDS335N is an N-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 1.7A continuous drain current at 25°C. The device is housed in a SOT-23-3 surface mount package and dissipates up to 500mW. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design requirements. Substitute parts must maintain compatibility with the original electrical specifications and mechanical form factor while offering active product status and continued availability.

Substiute Parts

NDS335N

onsemiIn Stock: 17802NDS335N Datasheet

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FDN335N

UMWIn Stock: 77821FDN335N Datasheet

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NTR4501NT1G

onsemiIn Stock: 70440NTR4501NT1G Datasheet

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AO3418

Alpha & Omega Semiconductor Inc.In Stock: 50474AO3418 Datasheet

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AO3424

Alpha & Omega Semiconductor Inc.In Stock: 30384AO3424 Datasheet

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DMN2230UQ-13

Diodes IncorporatedIn Stock: 1078DMN2230UQ-13 Datasheet

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PMV65UNER

Nexperia USA Inc.In Stock: 48319PMV65UNER Datasheet

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ZXMN2A01FTA

Diodes IncorporatedIn Stock: 17924ZXMN2A01FTA Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the NDS335N is determined by the following critical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel (required for circuit function)
• Drain to Source Voltage (Vdss): Minimum 20V (must equal or exceed original rating)
• Continuous Drain Current (Id): Minimum 1.7A at 25°C (must meet or exceed original rating)
• Package Type: SOT-23-3 or compatible TO-236-3/SC-59 variants (mechanical compatibility)
• Mounting Type: Surface Mount (assembly compatibility)

Secondary Compatibility Parameters:

• Rds On (Max): Lower values indicate improved performance; values at or below 110mOhm @ 4.5V are preferred
• Gate Threshold Voltage (Vgs(th)): Values at or below 1V @ 250µA ensure compatible gate drive requirements
• Operating Temperature Range: Must support -55°C to 150°C minimum
• Power Dissipation: Values at or above 500mW support thermal requirements

Substitute parts are grouped into two categories:

Category A – Direct Electrical Equivalents (N-Channel, 20V, ≥1.7A): These parts maintain the original voltage rating and meet or exceed current specifications with compatible gate characteristics.

Category B – Enhanced Performance Alternatives (N-Channel, ≥20V, >1.7A): These parts offer higher current ratings or voltage ratings, providing design margin and improved performance while maintaining package compatibility and gate drive compatibility.

Parameter Comparison

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status, Direct Compatibility):

NTR4501NT1G (onsemi) – This part is the preferred substitute for the NDS335N. It maintains the same 20V Vdss rating and SOT-23-3 package, with active product status. The device provides 3.2A continuous drain current, exceeding the original 1.7A specification. The Rds On of 80mOhm at 4.5V is lower than the original 110mOhm, resulting in reduced power dissipation and improved thermal performance. Gate threshold voltage of 1.2V is compatible with standard gate drive circuits. The part is RoHS3 compliant and carries AEC-Q101 automotive qualification through its base series.

DMN2230UQ-13 (Diodes Incorporated) – This part provides direct electrical compatibility with the NDS335N, maintaining 20V Vdss and SOT-23-3 package. The 2A continuous drain current exceeds the original 1.7A requirement. Rds On of 110mOhm matches the original specification. Gate threshold voltage of 1V is identical to the NDS335N. The part carries AEC-Q101 automotive qualification and RoHS3 compliance. Power dissipation of 600mW exceeds the original 500mW rating, providing thermal margin.

ZXMN2A01FTA (Diodes Incorporated) – This part maintains 20V Vdss and SOT-23-3 package compatibility. The 1.9A continuous drain current closely matches the original 1.7A specification. Gate threshold voltage of 0.7V is lower than the original, requiring verification of gate drive circuit compatibility. Rds On of 120mOhm is slightly higher than the original 110mOhm. RoHS3 compliant with active product status.

PMV65UNER (Nexperia USA Inc.) – This part maintains 20V Vdss and TO-236AB package (compatible with SOT-23-3 footprint). The 2.8A continuous drain current exceeds the original 1.7A specification. Rds On of 73mOhm is significantly lower than the original 110mOhm, providing improved efficiency. Gate threshold voltage of 1V matches the original specification. Power dissipation of 490mW is slightly lower than the original 500mW. RoHS3 compliant with active product status.

Alternative Substitutes (Enhanced Performance, Higher Voltage Rating):

AO3418 and AO3424 (Alpha & Omega Semiconductor Inc.) – These parts are not recommended for new designs due to their "Not For New Designs" status. However, they provide 30V Vdss rating and 3.8A continuous drain current, offering significant design margin. Both maintain SOT-23-3 package compatibility. Gate threshold voltage of 1.8V is higher than the original 1V, requiring gate drive circuit verification. Rds On values of 60mOhm (AO3418) and 80mOhm (AO3424) are lower than the original 110mOhm.

Selection Criteria Summary:

For direct replacement in existing designs, select NTR4501NT1G or DMN2230UQ-13. Both maintain the original voltage rating, package, and gate drive compatibility while offering active product status and improved current handling.

For designs requiring enhanced performance or higher voltage margin, select PMV65UNER or NTR4501NT1G, which provide lower Rds On values and higher current ratings.

Avoid AO3418 and AO3424 for new designs due to their obsolescence status, despite their enhanced electrical performance.

Frequently Asked Questions (FAQ)

Q: Can the NTR4501NT1G directly replace the NDS335N in existing PCB layouts?

A: Yes. The NTR4501NT1G is housed in the SOT-23-3 package, which is mechanically and electrically compatible with the NDS335N's SOT-23-3 package. Both devices use identical pin configurations for N-Channel MOSFETs (Gate, Drain, Source). No PCB modifications are required.

Q: What is the difference between SOT-23-3 and TO-236AB packages?

A: SOT-23-3 and TO-236AB are equivalent package designations for the same physical form factor. Both refer to a 3-pin surface mount package with identical dimensions and pin spacing. The PMV65UNER, specified as TO-236AB, is mechanically compatible with SOT-23-3 footprints.

Q: Why does the NTR4501NT1G have a higher gate charge (6nC) compared to the NDS335N (9nC)?

A: Gate charge is determined by the device's internal capacitance and switching characteristics. The NTR4501NT1G's lower gate charge results from its optimized internal structure, which also contributes to its lower Rds On value. Lower gate charge reduces gate drive power requirements and enables faster switching transitions.

Q: Is the DMN2230UQ-13 suitable for automotive applications?

A: Yes. The DMN2230UQ-13 carries AEC-Q101 automotive qualification, indicating it meets automotive reliability and performance standards. It is suitable for automotive and industrial applications requiring qualified components.

Q: What does "Not For New Designs" status mean for the AO3418 and AO3424?

A: "Not For New Designs" indicates that the manufacturer no longer recommends these parts for new product development. While existing inventory may be available, these parts are in end-of-life status and may have limited future availability. New designs should utilize active-status alternatives such as NTR4501NT1G or DMN2230UQ-13.

Q: Can I use the AO3424 as a substitute if I need higher current capability?

A: The AO3424 provides 3.8A continuous drain current, significantly exceeding the NDS335N's 1.7A specification. However, its "Not For New Designs" status makes it unsuitable for new product development. The NTR4501NT1G offers 3.2A current capability with active product status and is the preferred choice for higher current requirements.

Q: How do I verify gate drive circuit compatibility when substituting parts with different Vgs(th) values?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn the device on. The NDS335N specifies 1V @ 250µA. Substitute parts with Vgs(th) values between 0.7V and 1.8V are generally compatible with standard gate drive circuits operating at 3.3V, 5V, or higher logic levels. Verify that your gate drive voltage exceeds the substitute part's Vgs(th) by at least 2V for reliable operation.

Q: What is the significance of Rds On (on-resistance) in MOSFET selection?

A: Rds On determines the voltage drop across the device during conduction and directly affects power dissipation. Lower Rds On values result in reduced heat generation and improved efficiency. The NDS335N specifies 110mOhm @ 1.7A, 4.5V. Substitute parts with lower Rds On values (such as PMV65UNER at 73mOhm) provide improved thermal performance and reduced power loss.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All active-status substitute parts listed (NTR4501NT1G, DMN2230UQ-13, ZXMN2A01FTA, and PMV65UNER) are RoHS3 compliant, meeting environmental and hazardous substance restrictions. The AO3418 and AO3424 are also RoHS3 compliant but carry "Not For New Designs" status.

Q: What is the operating temperature range for substitute parts?

A: All substitute parts support the full operating temperature range of -55°C to 150°C (junction temperature), matching or exceeding the NDS335N specification. This ensures compatibility across industrial and automotive temperature extremes.