NDP7060 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NDP7060 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 75A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is rated for 150W maximum power dissipation. The NDP7060 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220 package format.

Key Parameters

Parameter	NDP7060 Specification
Drain-to-Source Voltage (Vdss)	60 V
Continuous Drain Current (Id) @ 25°C	75 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	13 mOhm @ 40A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4 V @ 250 µA
Gate Charge (Qg Max) @ Vgs	115 nC @ 10 V
Input Capacitance (Ciss Max) @ Vds	3600 pF @ 25 V
Power Dissipation (Max)	150 W (Tc)
Operating Temperature Range	-65°C to 175°C (TJ)
Package Type	TO-220-3 Through Hole
Gate Voltage (Vgs Max)	±20 V
Product Status	Obsolete
RoHS Compliance	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the NDP7060 are selected based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Equal to or greater than 60V
Continuous Drain Current (Id): Equal to or greater than 75A at 25°C
On-State Resistance (Rds On): Comparable or lower values to maintain thermal performance
Gate Threshold Voltage (Vgs(th)): Consistent with 4V @ 250µA for gate drive compatibility
Package Type: TO-220-3 or compatible TO-220 through-hole configuration
Operating Temperature Range: Minimum -55°C to 175°C (TJ)
Compliance: ROHS3 compliant for regulatory alignment

Substitution Categories:

Recommended Manufacturer Substitute (Direct Replacement): Parts meeting all primary criteria with active product status and identical voltage/current ratings.

Similar Substitutes (Functional Equivalents): Parts with equal or superior electrical ratings but differing in secondary parameters such as gate charge, input capacitance, or power dissipation. These parts maintain functional compatibility within the same voltage and current class.

Parameter Comparison

Parameter	NDP7060	RFP70N06	AOT430	IRFZ44VZPBF	STP60NF06
Manufacturer	onsemi	onsemi	Alpha & Omega Semiconductor Inc.	Infineon Technologies	STMicroelectronics
Vdss (V)	60	60	75	60	60
Id @ 25°C (A)	75	70	80	57	60
Rds On Max (mOhm)	13 @ 40A, 10V	14 @ 70A, 10V	11.5 @ 30A, 10V	12 @ 34A, 10V	16 @ 30A, 10V
Vgs(th) Max (V) @ Id	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA
Qg Max (nC) @ Vgs	115 @ 10V	156 @ 20V	114 @ 10V	65 @ 10V	73 @ 10V
Ciss Max (pF) @ Vds	3600 @ 25V	2250 @ 25V	4700 @ 30V	1690 @ 25V	1660 @ 25V
Power Dissipation Max (W)	150	150	268	92	110
Operating Temperature (°C)	-65 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220AB	TO-220
Product Status	Obsolete	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

RFP70N06 (Recommended Manufacturer Substitute)

The RFP70N06 is the primary recommended substitute for the NDP7060. Both devices are manufactured by onsemi and share identical 60V Vdss ratings. The RFP70N06 provides 70A continuous drain current, which is within 93% of the NDP7060's 75A rating. The RFP70N06 maintains equivalent gate threshold voltage (4V @ 250µA) and is housed in the same TO-220-3 package. The device is currently in active production status with 15,365 units in stock. ROHS3 compliance and identical thermal rating (150W) ensure regulatory and thermal compatibility. The slightly higher on-state resistance (14 mOhm vs. 13 mOhm) represents a negligible performance difference in most applications.

AOT430 (Similar Substitute with Enhanced Ratings)

The AOT430 from Alpha & Omega Semiconductor provides superior electrical ratings with 75V Vdss and 80A continuous drain current, exceeding the NDP7060 specifications. Power dissipation is rated at 268W, providing enhanced thermal headroom. The device maintains 4V gate threshold voltage and is ROHS3 compliant. The AOT430 is in active production with 10,265 units available. The higher Vdss rating provides additional voltage margin for transient protection. Gate charge (114 nC @ 10V) is comparable to the NDP7060. This device is suitable for applications requiring enhanced voltage or thermal performance.

IRFZ44VZPBF (Similar Substitute with Lower Current Rating)

The IRFZ44VZPBF from Infineon Technologies is rated for 60V Vdss with 57A continuous drain current, representing approximately 76% of the NDP7060's current capability. The device features lower on-state resistance (12 mOhm @ 34A, 10V) and significantly lower gate charge (65 nC @ 10V), which may reduce gate drive power requirements. However, the maximum power dissipation is limited to 92W, substantially lower than the NDP7060's 150W rating. The product status is listed as "Not For New Designs," limiting its suitability for new applications. This device is appropriate only for legacy system maintenance where current requirements do not exceed 57A.

STP60NF06 (Similar Substitute with Comparable Ratings)

The STP60NF06 from STMicroelectronics is rated for 60V Vdss with 60A continuous drain current, representing 80% of the NDP7060's current capability. The device is in active production with 35,300 units in stock. Gate threshold voltage matches the NDP7060 at 4V @ 250µA. Power dissipation is rated at 110W, lower than the NDP7060's 150W. On-state resistance is 16 mOhm @ 30A, 10V, slightly higher than the NDP7060. This device is suitable for applications where current requirements do not exceed 60A and thermal dissipation remains within 110W limits.

Frequently Asked Questions (FAQ)

Q: Can the RFP70N06 directly replace the NDP7060 in all applications?

A: The RFP70N06 is suitable for applications where the continuous drain current requirement does not exceed 70A. Both devices share identical 60V Vdss ratings, equivalent gate threshold voltages, and identical TO-220-3 packaging. The RFP70N06 is the recommended substitute for the obsolete NDP7060 due to its active production status and onsemi manufacturer alignment.

Q: What is the significance of the AOT430's higher Vdss rating of 75V compared to the NDP7060's 60V?

A: The 75V Vdss rating on the AOT430 provides additional voltage margin for transient overvoltage protection. In applications where the maximum operating voltage is 60V, the AOT430 offers enhanced reliability against voltage spikes. However, the higher voltage rating does not provide functional advantages in circuits designed for 60V operation.

Q: Why is the IRFZ44VZPBF marked as "Not For New Designs"?

A: The "Not For New Designs" status indicates that Infineon has discontinued active development and support for this device. While the IRFZ44VZPBF remains available in inventory, it is not recommended for new product development. This status reflects manufacturer lifecycle decisions and does not necessarily indicate technical deficiency.

Q: Are all substitute parts compatible with the same gate drive circuitry as the NDP7060?

A: All substitute parts listed maintain the same 4V gate threshold voltage specification at 250µA, ensuring compatibility with gate drive circuits designed for the NDP7060. However, gate charge values differ across substitutes. The RFP70N06 exhibits higher gate charge (156 nC @ 20V) compared to the NDP7060 (115 nC @ 10V), which may require gate drive circuits with higher current capability. The IRFZ44VZPBF and STP60NF06 feature lower gate charge values, reducing gate drive power requirements.

Q: What thermal considerations apply when selecting a substitute part?

A: The NDP7060 is rated for 150W maximum power dissipation. The RFP70N06 maintains this 150W rating, making it thermally equivalent. The AOT430 provides enhanced thermal capability at 268W, suitable for high-power applications. The IRFZ44VZPBF (92W) and STP60NF06 (110W) have lower thermal ratings and are appropriate only for applications where power dissipation remains within their specified limits. Thermal design must account for both the device rating and the actual power dissipation in the application circuit.

Q: Are all substitute parts available in the same TO-220-3 package?

A: The RFP70N06 and AOT430 are specified in TO-220-3 packages, identical to the NDP7060. The IRFZ44VZPBF is specified as TO-220AB, which is mechanically compatible with TO-220-3 footprints. The STP60NF06 is specified as TO-220, also mechanically compatible. All devices are through-hole mounted and suitable for standard TO-220 PCB layouts.

Q: What is the impact of on-state resistance differences between the NDP7060 and substitute parts?

A: On-state resistance directly affects power dissipation and thermal performance. The NDP7060 specifies 13 mOhm @ 40A, 10V. The RFP70N06 (14 mOhm @ 70A, 10V) exhibits slightly higher resistance, resulting in marginally increased power dissipation. The AOT430 (11.5 mOhm @ 30A, 10V) provides lower resistance, reducing power dissipation. The IRFZ44VZPBF (12 mOhm @ 34A, 10V) and STP60NF06 (16 mOhm @ 30A, 10V) show comparable or slightly higher resistance. Resistance differences must be evaluated within the context of actual operating current levels in the application.

Q: Which substitute part offers the best overall compatibility with the NDP7060?

A: The RFP70N06 offers the best overall compatibility. It is manufactured by onsemi, the same manufacturer as the NDP7060, ensuring design consistency. The RFP70N06 maintains identical voltage ratings (60V Vdss), equivalent gate threshold voltage (4V @ 250µA), identical package (TO-220-3), and equivalent thermal rating (150W). The device is in active production with substantial inventory availability. The 70A continuous drain current rating represents a 93% match to the NDP7060's 75A specification, making it suitable for most applications designed for the NDP7060.

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