NDF11N50ZG Equivalent & Substitute Parts

Part Overview

The NDF11N50ZG is an N-Channel 500V 12A MOSFET manufactured by onsemi in a Through Hole TO-220FP package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing applications. The part delivers 39W maximum power dissipation and operates across a temperature range of -55°C to 150°C. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	12	A (Tc)
Rds On (Max) @ Id, Vgs	520 mOhm @ 4.5A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	69	nC @ 10V
Power Dissipation (Max)	39	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—

Substitute Part Grouping Explanation

Substitution eligibility for the NDF11N50ZG is determined by the following critical parameters:

Primary Electrical Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must support 12A or higher at 25°C
On-Resistance (Rds On): Must not exceed 520 mOhm at specified gate voltage and current
Gate Charge (Qg): Lower values indicate faster switching; values up to 69 nC are acceptable
Power Dissipation: Must support minimum 39W thermal load

Mechanical Criteria:

Mounting Type: Through Hole required
Package: TO-220-3 Full Pack configuration

Compliance Criteria:

Product Status: Active or Not For New Designs acceptable; Obsolete status indicates end-of-life
Operating Temperature: Minimum -55°C to 150°C range required

The substitute parts identified below meet these criteria with varying trade-offs in current capacity, power dissipation, and gate charge characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Temp. Range (°C)	Package	Status
NDF11N50ZG	onsemi	500	12 (Tc)	520 @ 4.5A, 10V	69 @ 10V	39	-55 to 150	TO-220FP	Obsolete
FDPF12N50NZ	Fairchild Semiconductor	500	11.5 (Tc)	520 @ 5.75A, 10V	30 @ 10V	42	-55 to 150	TO-220F-3	Active
IPA50R520CPXKSA1	Infineon Technologies	500	7.1 (Tc)	520 @ 3.8A, 10V	17 @ 10V	66	-40 to 150	PG-TO220-3-31	Obsolete
R5011FNX	Rohm Semiconductor	500	11 (Ta), 5.4 (Tc)	520 @ 5.5A, 10V	30 @ 10V	50	-55 to 150	TO-220FM	Not For New Designs
STP11NK50ZFP	STMicroelectronics	500	10 (Tc)	520 @ 4.5A, 10V	68 @ 10V	30	-55 to 150	TO-220FP	Not For New Designs
TK12A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	450	12 (Ta)	520 @ 6A, 10V	24 @ 10V	45	-55 to 150	TO-220SIS	Active
TK13A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	450	13 (Ta)	460 @ 6.5A, 10V	25 @ 10V	45	-55 to 150	TO-220SIS	Active
TK13A55DA(STA4,QM)	Toshiba Semiconductor and Storage	550	12.5 (Ta)	480 @ 6.3A, 10V	38 @ 10V	45	-55 to 150	TO-220SIS	Active

Engineering Selection Recommendations

FDPF12N50NZ (Fairchild Semiconductor): This part maintains 500V Vdss and 11.5A continuous drain current, closely matching the NDF11N50ZG electrical profile. The Active product status ensures ongoing availability and support. Gate charge is significantly reduced to 30 nC, improving switching performance. Power dissipation of 42W exceeds the original specification. The TO-220F-3 package is mechanically compatible with TO-220-3 applications.

STP11NK50ZFP (STMicroelectronics): This SuperMESH™ technology device maintains 500V Vdss and delivers 10A continuous drain current with identical on-resistance characteristics. The Not For New Designs status indicates limited future availability. Gate charge of 68 nC closely matches the original part. Power dissipation of 30W is lower than the original specification, suitable for thermally constrained applications. The TO-220FP package provides direct mechanical compatibility.

TK13A55DA(STA4,QM) (Toshiba Semiconductor and Storage): This π-MOSVII technology device offers 550V Vdss, exceeding the original 500V specification, with 12.5A continuous drain current. Active product status ensures long-term availability. On-resistance of 480 mOhm is lower than the original 520 mOhm, improving efficiency. Gate charge of 38 nC provides moderate switching speed improvement. Power dissipation of 45W accommodates thermal requirements. The TO-220SIS package is mechanically compatible with TO-220-3 applications.

TK12A45D(STA4,Q,M) (Toshiba Semiconductor and Storage): This part delivers 12A continuous drain current matching the original specification, with Active product status. Vdss of 450V is lower than the original 500V, limiting application scope to lower voltage circuits. Gate charge of 24 nC provides superior switching performance. Power dissipation of 45W meets thermal requirements. The TO-220SIS package is mechanically compatible.

IPA50R520CPXKSA1 (Infineon Technologies): This CoolMOS™ technology device maintains 500V Vdss but delivers only 7.1A continuous drain current, significantly below the original 12A specification. Obsolete product status limits availability. Gate charge of 17 nC provides excellent switching performance. Power dissipation of 66W exceeds thermal requirements. This part is suitable only for applications with reduced current demands.

R5011FNX (Rohm Semiconductor): This device maintains 500V Vdss with 11A continuous drain current (Ta) and 5.4A (Tc). Not For New Designs status indicates declining availability. Gate charge of 30 nC improves switching performance. Power dissipation of 50W accommodates thermal requirements. The TO-220FM package is mechanically compatible.

Frequently Asked Questions (FAQ)

Q: Can the NDF11N50ZG be directly replaced with any of these substitute parts?

A: Direct replacement depends on application voltage and current requirements. FDPF12N50NZ and TK13A55DA(STA4,QM) provide the closest electrical match for 500V applications requiring 11-12.5A. TK12A45D(STA4,Q,M) and TK13A45D(STA4,Q,M) are suitable only for 450V maximum applications. STP11NK50ZFP is suitable for applications tolerating 10A current. IPA50R520CPXKSA1 is limited to applications requiring 7.1A or less.

Q: What is the significance of the different package designations (TO-220FP, TO-220F-3, TO-220SIS, TO-220FM)?

A: All listed packages are TO-220-3 Full Pack variants with identical pin configurations and mechanical mounting footprints. The different designations reflect manufacturer-specific nomenclature. All parts are mechanically interchangeable in standard TO-220 mounting applications.

Q: Why do some substitute parts have lower continuous drain current ratings?

A: Lower current ratings reflect different die designs and thermal management characteristics. IPA50R520CPXKSA1, for example, prioritizes lower gate charge and higher power dissipation capacity over current handling. Selection depends on whether the application requires the full 12A specification or can operate at reduced current levels.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge values (17-30 nC) enable faster switching and reduced driver power consumption compared to the original 69 nC specification. Higher gate charge values (68-69 nC) maintain switching characteristics similar to the original part.

Q: What is the impact of on-resistance (Rds On) differences?

A: On-resistance determines conduction losses and heat generation. The original specification of 520 mOhm is matched by most substitutes. TK13A55DA(STA4,QM) offers 480 mOhm, reducing conduction losses by approximately 8%. Lower on-resistance improves efficiency in high-current applications.

Q: Are there compliance or certification differences between these parts?

A: All listed parts carry REACH Unaffected and EAR99 ECCN classifications matching the original part. Toshiba parts are RoHS3 Compliant. Fairchild and STMicroelectronics parts carry equivalent compliance certifications. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no moisture sensitivity concerns.

Q: Why is product status important for selection?

A: Active status (FDPF12N50NZ, TK12A45D, TK13A45D, TK13A55DA) ensures ongoing manufacturing and long-term availability. Not For New Designs status (STP11NK50ZFP, R5011FNX) indicates declining production and eventual discontinuation. Obsolete status (NDF11N50ZG, IPA50R520CPXKSA1) indicates end-of-life with no future availability.

Q: Can I use a substitute with higher Vdss rating in a 500V application?

A: Yes. TK13A55DA(STA4,QM) with 550V Vdss provides additional voltage margin in 500V applications without performance degradation. Higher voltage ratings do not negatively impact operation at lower voltages.

Q: What thermal considerations apply when selecting a substitute?

A: Power dissipation ratings must accommodate circuit thermal loads. The original 39W specification is exceeded by FDPF12N50NZ (42W), R5011FNX (50W), TK12A45D (45W), TK13A45D (45W), TK13A55DA (45W), and IPA50R520CPXKSA1 (66W). STP11NK50ZFP at 30W is suitable only for thermally constrained applications. Verify heatsinking requirements for your specific application.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message