NDF08N50ZG Equivalent & Substitute Parts

Part Overview

The NDF08N50ZG is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 8.5A continuous drain current at 25°C. The device is housed in a TO-220FP through-hole package and is designed for high-voltage switching applications. This part carries an obsolete product status, making identification of equivalent and substitute components essential for ongoing system support, design updates, and procurement continuity.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	NDF08N50ZG	—
Manufacturer	onsemi	—
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	8.5	A (Tc)
Rds On (Max) @ Id, Vgs	850	mOhm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs	46	nC @ 10V
Power Dissipation (Max)	35	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3 Full Pack	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the NDF08N50ZG is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 8.5A at 25°C
Gate-Source Voltage (Vgs): Must support ±30V maximum rating
Operating Temperature Range: Must support -55°C to 150°C or equivalent upper limit of 150°C
Mounting Type: Through-hole configuration required
Package Family: TO-220 series variants acceptable (TO-220FP, TO-220FM, TO-220FL, TO-220SIS)

Secondary Alignment Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; 850mOhm baseline
Gate Charge (Qg): Lower values reduce switching losses; 46nC baseline
Power Dissipation: Higher ratings provide thermal margin; 35W baseline

Substitute parts must maintain N-Channel MOSFET technology and through-hole mounting. Variations in TO-220 package designations (FP, FM, FL, SIS) are mechanically compatible within the TO-220-3 Full Pack family.

Parameter Comparison

Parameter	NDF08N50ZG (onsemi)	R5009ANX (Rohm)	RJK4006DPP-M0#T2 (Renesas)	RJL5012DPP-M0#T2 (Renesas)	TK8A50D(STA4,Q,M) (Toshiba)
Vdss (V)	500	500	400	500	500
Id @ 25°C (A)	8.5 (Tc)	9 (Tc)	8 (Ta)	12 (Ta)	8 (Ta)
Rds On (Max) (mOhm)	850 @ 3.6A, 10V	720 @ 4.5A, 10V	800 @ 4A, 10V	700 @ 6A, 10V	850 @ 4A, 10V
Qg (Max) (nC)	46 @ 10V	21 @ 10V	20 @ 10V	27.8 @ 10V	16 @ 10V
Power Dissipation (Max) (W)	35 (Tc)	50 (Tc)	29 (Tc)	30 (Tc)	40 (Tc)
Vgs (Max) (V)	±30	±30	±30	±30	±30
Operating Temperature (°C)	-55 to 150	to 150	to 150	to 150	to 150
Package	TO-220FP	TO-220FM	TO-220FL	TO-220FL	TO-220SIS
Product Status	Obsolete	Not For New Designs	Active	Active	Active

Engineering Selection Recommendations

Direct Substitutes (500V, ≥8.5A Rating):

R5009ANX (Rohm Semiconductor) — This part meets the 500V and 9A current requirements with improved on-state resistance (720mOhm) and lower gate charge (21nC). However, the product status is "Not For New Designs," indicating limited long-term availability and support. This substitute is suitable for legacy system maintenance and repair applications where the NDF08N50ZG is no longer procurable.

RJL5012DPP-M0#T2 (Renesas Electronics Corporation) — This part exceeds the primary electrical requirements with 500V rating and 12A continuous current capability. It features superior on-state resistance (700mOhm) and moderate gate charge (27.8nC). The product status is Active with RoHS3 compliance, providing superior long-term availability and regulatory alignment. This is the preferred substitute for new designs and ongoing production support.

TK8A50D(STA4,Q,M) (Toshiba Semiconductor and Storage) — This part matches the 500V and 8A current specifications with identical on-state resistance (850mOhm) to the original. It offers the lowest gate charge (16nC) among all substitutes, reducing switching losses. The product status is Active with RoHS3 compliance and π-MOSVII series designation, ensuring long-term support and regulatory compliance.

Conditional Substitute (400V Rating):

RJK4006DPP-M0#T2 (Renesas Electronics Corporation) — This part operates at 400V, which is below the 500V specification of the NDF08N50ZG. It is suitable only for applications where the actual operating voltage does not exceed 400V. The product status is Active with RoHS3 compliance. Use this substitute only after confirming that system voltage requirements do not exceed 400V.

Compliance and Regulatory Status:

All active substitutes (RJL5012DPP-M0#T2, TK8A50D(STA4,Q,M), RJK4006DPP-M0#T2) carry RoHS3 compliance certification. The original NDF08N50ZG and R5009ANX do not list RoHS status but are REACH Unaffected. For new designs and systems requiring regulatory compliance documentation, the active Renesas and Toshiba options provide superior compliance posture.

Frequently Asked Questions (FAQ)

Q: Can R5009ANX be used as a direct replacement for NDF08N50ZG?

A: R5009ANX meets the electrical requirements (500V, 9A) and is mechanically compatible (TO-220 package). However, its "Not For New Designs" status indicates limited future availability. It is suitable for repair and legacy system support but not recommended for new production designs.

Q: What is the difference between the Renesas RJL5012DPP-M0#T2 and the original NDF08N50ZG?

A: The RJL5012DPP-M0#T2 exceeds the original specifications with 12A continuous current versus 8.5A, improved on-state resistance (700mOhm vs. 850mOhm), and higher power dissipation rating (30W vs. 35W). It is Active status with RoHS3 compliance, making it the preferred long-term substitute.

Q: Is the Toshiba TK8A50D(STA4,Q,M) pin-compatible with NDF08N50ZG?

A: Both devices use the TO-220 package family (TO-220SIS vs. TO-220FP) with three-pin through-hole configurations. Pin assignments for N-Channel MOSFETs in TO-220 packages are standardized (Gate, Drain, Source). Mechanical and electrical pin compatibility is confirmed. Verify PCB layout and thermal management provisions before installation.

Q: Why does RJK4006DPP-M0#T2 have a lower voltage rating (400V vs. 500V)?

A: RJK4006DPP-M0#T2 is designed for lower-voltage applications. It is a conditional substitute only for systems operating below 400V. Do not use this part in circuits where the drain-to-source voltage may reach or exceed 400V, as it will exceed the device rating and cause failure.

Q: What is the significance of the "Not For New Designs" status on R5009ANX?

A: This status indicates that the manufacturer (Rohm Semiconductor) is not recommending this part for new product development. It may have limited production runs, reduced technical support, or planned discontinuation. Use this part only for maintaining existing systems or repairing legacy equipment where the original part is unavailable.

Q: Are all substitute parts RoHS compliant?

A: The active substitutes (RJL5012DPP-M0#T2, TK8A50D(STA4,Q,M), RJK4006DPP-M0#T2) carry RoHS3 compliance certification. The original NDF08N50ZG and R5009ANX do not list RoHS status. For applications requiring RoHS compliance documentation, use only the active Renesas or Toshiba options.

Q: What is the thermal difference between these substitutes?

A: Power dissipation ratings vary: NDF08N50ZG (35W), R5009ANX (50W), RJK4006DPP-M0#T2 (29W), RJL5012DPP-M0#T2 (30W), TK8A50D(STA4,Q,M) (40W). Higher ratings provide greater thermal margin. Verify that PCB thermal design (copper area, heatsinking) accommodates the selected substitute's power dissipation characteristics.

Q: Can these parts be used interchangeably in existing PCB designs?

A: All substitutes use TO-220 package variants with standard three-pin through-hole configurations. Mechanical fit is compatible. However, verify that PCB layout accommodates the specific package variant (FP, FM, FL, SIS) and that thermal management provisions are adequate for the substitute's power dissipation rating. Gate charge differences may require adjustment of gate drive circuits in high-frequency switching applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message