NDC652P P-Channel MOSFET 30V 2.4A Equivalent & Substitute Parts

Part Overview

The NDC652P is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 2.4A continuous drain current at 25°C. The device is housed in a SuperSOT™-6 package and is designed for surface mount applications. The NDC652P is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating the transition from obsolete to active product status.

Substiute Parts

NDC652P

onsemiIn Stock: 43874NDC652P Datasheet

Current PartRFQ

FDC5614P

onsemiIn Stock: 25038FDC5614P Datasheet

SimilarRFQ

NTGS3455T1G

onsemiIn Stock: 26233NTGS3455T1G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the NDC652P are selected based on the following critical parameters that determine functional compatibility:

Primary Compatibility Criteria:

• FET Type: P-Channel topology
• Drain to Source Voltage (Vdss): Equal to or greater than 30V
• Continuous Drain Current (Id): Equal to or greater than 2.4A at 25°C
• Gate Threshold Voltage (Vgs(th)): Matching specification at 3V @ 250µA
• Operating Temperature Range: -55°C to 150°C (TJ)
• Mounting Type: Surface Mount
• Package Compatibility: SuperSOT™-6 or equivalent SOT-23-6 footprint

Secondary Compatibility Parameters:

• Rds On (Max): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Power Dissipation: Equal or greater thermal capability
• Vgs (Max): Symmetric or greater gate voltage rating

The NDC652P is obsolete; substitute parts must be active or current production status to ensure long-term availability and support.

Parameter Comparison

Engineering Selection Recommendations

FDC5614P Selection Criteria:

The FDC5614P is a direct functional substitute for the NDC652P with enhanced voltage rating. This part maintains identical gate threshold voltage (3V @ 250µA), matching Rds On performance (105mOhm vs. 110mOhm), and equivalent power dissipation (1.6W). The FDC5614P provides 60V Vdss rating, exceeding the NDC652P's 30V specification, allowing operation in higher voltage applications. The FDC5614P is active production status with ROHS3 compliance, ensuring long-term availability. Gate charge is slightly elevated (24nC vs. 20nC), resulting in marginally increased switching losses. The symmetric Vgs rating (±20V) provides enhanced gate voltage flexibility compared to the NDC652P's asymmetric -20V specification.

NTGS3455T1G Selection Criteria:

The NTGS3455T1G is a direct functional substitute for the NDC652P with matched voltage rating and superior switching characteristics. This part maintains identical Vdss (30V) and gate threshold voltage (3V @ 250µA), with continuous drain current of 2.5A, exceeding the NDC652P's 2.4A specification. The NTGS3455T1G delivers improved Rds On performance (100mOhm vs. 110mOhm) and significantly reduced gate charge (13nC vs. 20nC), resulting in lower switching losses and improved efficiency. The NTGS3455T1G is active production status with ROHS3 compliance. Power dissipation is reduced to 500mW, indicating a more compact thermal footprint. The symmetric Vgs rating (±20V) provides enhanced gate voltage flexibility. Package compatibility is maintained with SOT-23-6 footprint.

Recommendation Summary:

Both FDC5614P and NTGS3455T1G are active production substitutes for the obsolete NDC652P. Selection between these parts depends on application voltage requirements and thermal constraints. For applications requiring higher voltage headroom, FDC5614P is appropriate. For applications prioritizing switching efficiency and reduced thermal dissipation, NTGS3455T1G is appropriate. Both parts maintain electrical compatibility with the NDC652P within their respective parameter ranges.

Frequently Asked Questions (FAQ)

Q: Can the FDC5614P be used as a direct replacement for the NDC652P in all applications?

A: The FDC5614P is electrically compatible with the NDC652P for applications operating at or below 30V. The FDC5614P's 60V Vdss rating provides additional voltage margin but does not restrict operation at lower voltages. Gate threshold voltage, Rds On, and operating temperature range are matched. Footprint compatibility is maintained with SOT-23-6 package. Verification of gate charge impact on switching frequency is required for high-frequency applications.

Q: What is the primary difference between the NTGS3455T1G and NDC652P?

A: The NTGS3455T1G maintains identical voltage rating (30V Vdss) and gate threshold voltage (3V @ 250µA) as the NDC652P. The primary differences are improved Rds On performance (100mOhm vs. 110mOhm), significantly reduced gate charge (13nC vs. 20nC), and lower power dissipation (500mW vs. 1.6W). These improvements result in reduced switching losses and improved thermal performance. Continuous drain current is marginally higher (2.5A vs. 2.4A).

Q: Are both substitute parts available in the same package as the NDC652P?

A: Both FDC5614P and NTGS3455T1G are available in SOT-23-6 Thin and TSOT-23-6 packages, maintaining footprint compatibility with the NDC652P. PCB layout modifications are not required for package substitution.

Q: What is the impact of gate charge differences on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The NTGS3455T1G has lower gate charge (13nC) compared to the NDC652P (20nC) and FDC5614P (24nC). Lower gate charge reduces switching losses and allows higher switching frequencies with equivalent driver capability. Applications with fixed switching frequency experience reduced power dissipation with lower gate charge devices.

Q: Are both substitute parts RoHS compliant?

A: Both FDC5614P and NTGS3455T1G are ROHS3 compliant. The NDC652P RoHS status is not specified in the provided data. Both substitute parts meet current environmental compliance requirements.

Q: What is the significance of the symmetric Vgs rating (±20V) in the substitute parts?

A: The FDC5614P and NTGS3455T1G feature symmetric gate voltage ratings (±20V), compared to the NDC652P's asymmetric -20V specification. Symmetric ratings provide flexibility in gate drive circuit design and allow operation with both positive and negative gate voltage excursions. This does not restrict operation with the NDC652P's original gate drive specifications.

Q: Can the FDC5614P be used in applications requiring exactly 30V operation?

A: Yes. The FDC5614P's 60V Vdss rating is a superset of the 30V requirement. The device operates normally at 30V with additional voltage margin. No circuit modifications are required. The higher voltage rating does not degrade performance at lower voltages.

Q: What thermal considerations apply when substituting the NTGS3455T1G?

A: The NTGS3455T1G has reduced power dissipation (500mW) compared to the NDC652P (1.6W). This results in lower junction temperature rise for equivalent operating conditions. Thermal design margins improve with the NTGS3455T1G. Existing thermal management provisions for the NDC652P remain adequate for the NTGS3455T1G.