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MURF860G Equivalent & Substitute Parts
Part Overview
The MURF860G is a general-purpose rectifier diode manufactured by onsemi, rated for 600 V DC reverse voltage and 8 A average rectified current in a through-hole TO-220FP package. This diode is designed for fast recovery applications with a reverse recovery time of 60 ns and operates across a junction temperature range of -65°C to 175°C. The part is currently in active product status and complies with RoHS3 and REACH regulations.
Equivalent and substitute parts are necessary when the primary part number becomes unavailable, when design requirements demand alternative thermal or electrical characteristics, or when sourcing from multiple manufacturers is required for supply chain resilience.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 600 | V |
| Current - Average Rectified (Io) | 8 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A | V |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 60 | ns |
| Current - Reverse Leakage @ Vr | 10 | µA @ 600 V |
| Mounting Type | Through Hole | - |
| Package / Case | TO-220-2 Full Pack | - |
| Operating Temperature - Junction | -65 to 175 | °C |
| Technology | Standard | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of the MURF860G is determined by the following critical parameters:
Mandatory Matching Parameters:
- Voltage - DC Reverse (Vr) (Max): 600 V
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack or compatible TO-220 variants
- Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
- RoHS3 Compliance
Allowable Variation Parameters:
- Current - Average Rectified (Io): Substitute parts rated at 8 A or higher are acceptable
- Voltage - Forward (Vf) (Max) @ If: Variations within the fast recovery diode class are acceptable
- Reverse Recovery Time (trr): Values within the fast recovery specification (≤ 500 ns) are acceptable
- Operating Temperature - Junction: Minimum junction temperature must support -55°C or lower; maximum temperature of 150°C or higher is acceptable
- Reverse Leakage Current: Values at or below 10 µA @ 600 V are acceptable
Substitute parts must maintain electrical compatibility within these parameters while supporting the same 600 V reverse voltage rating and through-hole mounting configuration.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ If [V] | trr [ns] | Ir @ Vr [µA] | Package | Tj (Max) [°C] | Status |
|---|---|---|---|---|---|---|---|---|---|
| MURF860G | onsemi | 600 | 8 | 1.5 @ 8 A | 60 | 10 @ 600 V | TO-220FP | 175 | Active |
| FESF8JT-E3/45 | Vishay | 600 | 8 | 1.5 @ 8 A | 50 | 10 @ 600 V | ITO-220AC | 150 | Active |
| DHG5I600PM | IXYS | 600 | 5 | 2.2 @ 5 A | 35 | 10 @ 600 V | TO-220ACFP | 150 | Active |
| FFPF10UA60ST | onsemi | 600 | 10 | 2.3 @ 10 A | 120 | 100 @ 600 V | TO-220F-2L | 150 | Obsolete |
| RFNL5TJ6SGC9 | Rohm | 600 | 5 | 1.3 @ 5 A | 130 | 10 @ 600 V | TO-220ACFP | 150 | Active |
| RFNL10TJ6SGC9 | Rohm | 600 | 10 | 1.3 @ 10 A | 150 | 10 @ 600 V | TO-220ACFP | 150 | Active |
| RFV8TJ6SGC9 | Rohm | 600 | 8 | 2.8 @ 8 A | 45 | 10 @ 600 V | TO-220ACFP | 150 | Active |
| RFV15TJ6SGC9 | Rohm | 600 | 15 | 2.8 @ 15 A | 50 | 10 @ 600 V | TO-220ACFP | 150 | Active |
| RFNL15TJ6SGC9 | Rohm | 600 | 15 | 1.3 @ 15 A | 160 | 10 @ 600 V | TO-220ACFP | 150 | Active |
| RFNL20TJ6SGC9 | Rohm | 600 | 20 | 1.3 @ 20 A | 180 | 10 @ 600 V | TO-220ACFP | 150 | Active |
| RFV12TJ6SGC9 | Rohm | 600 | 12 | 2.8 @ 12 A | 45 | 10 @ 600 V | TO-220ACFP | 150 | Active |
Engineering Selection Recommendations
Direct Equivalent (Same Current Rating):
FESF8JT-E3/45 from Vishay General Semiconductor is the closest direct equivalent to the MURF860G. Both parts are rated for 8 A average rectified current at 600 V reverse voltage with identical forward voltage characteristics (1.5 V @ 8 A). The FESF8JT-E3/45 features a slightly faster reverse recovery time (50 ns versus 60 ns) and is housed in an ITO-220AC package with isolated tab. Both parts are RoHS3 compliant and active in production status. The primary design consideration is the maximum junction temperature, which is 150°C for the Vishay part versus 175°C for the MURF860G.
Higher Current Capacity Substitutes:
For applications requiring higher current capacity while maintaining 600 V reverse voltage and fast recovery characteristics, the following active parts are available:
- RFNL10TJ6SGC9 (Rohm, 10 A): Rated for 10 A with 1.3 V forward voltage @ 10 A and 150 ns reverse recovery time
- RFV8TJ6SGC9 (Rohm, 8 A): Exact current match with 2.8 V forward voltage @ 8 A and 45 ns reverse recovery time
- RFNL15TJ6SGC9 (Rohm, 15 A): Rated for 15 A with 1.3 V forward voltage @ 15 A and 160 ns reverse recovery time
- RFNL20TJ6SGC9 (Rohm, 20 A): Rated for 20 A with 1.3 V forward voltage @ 20 A and 180 ns reverse recovery time
All Rohm parts are RoHS3 compliant and active in production. Maximum junction temperature for Rohm parts is 150°C.
Lower Current Capacity Substitutes:
For applications where lower current capacity is acceptable:
- DHG5I600PM (IXYS, 5 A): Rated for 5 A with 2.2 V forward voltage @ 5 A, 35 ns reverse recovery time, and isolated tab TO-220ACFP package. Active status and RoHS3 compliant.
- RFNL5TJ6SGC9 (Rohm, 5 A): Rated for 5 A with 1.3 V forward voltage @ 5 A and 130 ns reverse recovery time. Active status and RoHS3 compliant.
Obsolete Part:
FFPF10UA60ST (onsemi, 10 A) is marked as obsolete and should not be selected for new designs despite meeting voltage and current specifications. This part exhibits higher reverse leakage current (100 µA @ 600 V versus 10 µA for the MURF860G) and longer reverse recovery time (120 ns).
Compliance and Certification:
All recommended active substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of the MURF860G. All parts are classified under HTSUS code 8541.10.0080 and ECCN EAR99.
Frequently Asked Questions (FAQ)
Q: Can FESF8JT-E3/45 be used as a direct replacement for MURF860G?
A: FESF8JT-E3/45 is electrically compatible as a direct substitute. Both parts are rated for 8 A at 600 V with identical forward voltage (1.5 V @ 8 A) and fast recovery characteristics. The primary difference is the maximum junction temperature (150°C versus 175°C for MURF860G) and package variant (ITO-220AC with isolated tab versus TO-220FP). Verify that the application's thermal environment does not exceed 150°C junction temperature and that the isolated tab feature is compatible with the circuit board layout.
Q: Why are Rohm parts listed with different forward voltage values?
A: Rohm manufactures two distinct product lines within the 600 V, 8 A TO-220ACFP category. The RFNL series (RFNL5TJ6SGC9, RFNL10TJ6SGC9, RFNL15TJ6SGC9, RFNL20TJ6SGC9) exhibits lower forward voltage (1.3 V across the current range), while the RFV series (RFV8TJ6SGC9, RFV12TJ6SGC9, RFV15TJ6SGC9) exhibits higher forward voltage (2.8 V across the current range). Both series meet the fast recovery specification and 600 V rating. Selection between series depends on application requirements for forward voltage drop and power dissipation.
Q: Can I use a higher current rated part as a substitute?
A: Yes. Parts rated for higher average rectified current (10 A, 15 A, or 20 A) are acceptable substitutes for the 8 A MURF860G, provided all other parameters remain within specification: 600 V reverse voltage, fast recovery characteristic, through-hole TO-220 mounting, RoHS3 compliance, and operating temperature compatibility. Higher current rated parts will not degrade circuit performance in an 8 A application.
Q: Can I use a lower current rated part as a substitute?
A: No. Parts rated for lower average rectified current (5 A) are not acceptable substitutes for the 8 A MURF860G. Using an undersized diode creates risk of thermal stress, reduced reliability, and potential circuit failure under normal operating conditions.
Q: What is the significance of the isolated tab feature in TO-220ACFP packages?
A: The isolated tab in TO-220ACFP packages (used by FESF8JT-E3/45, DHG5I600PM, and Rohm parts) electrically isolates the mounting tab from the diode cathode, eliminating the need for an insulating washer when mounting to a common heat sink. The standard TO-220FP package (MURF860G) has a conducting tab connected to the cathode. Verify circuit board layout and heat sink mounting requirements before substituting between isolated and non-isolated tab variants.
Q: Why is FFPF10UA60ST marked as obsolete?
A: FFPF10UA60ST is listed with obsolete product status, indicating it is no longer in active production. Additionally, this part exhibits higher reverse leakage current (100 µA @ 600 V) compared to the MURF860G (10 µA @ 600 V), which increases standby power consumption. New designs should not incorporate obsolete parts.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed in this reference are RoHS3 compliant and REACH unaffected, matching the regulatory compliance of the MURF860G. All parts are suitable for applications requiring RoHS3 certification.
Q: What is the impact of reverse recovery time differences?
A: Reverse recovery time (trr) affects switching speed and electromagnetic interference characteristics. The MURF860G has a trr of 60 ns. Substitute parts range from 35 ns (DHG5I600PM) to 180 ns (RFNL20TJ6SGC9). Faster recovery times (lower trr values) reduce switching losses and EMI but may increase cost. Slower recovery times are acceptable in applications where switching frequency is low or EMI is not a critical constraint. All listed parts meet the fast recovery specification (≤ 500 ns).
Q: Can package differences affect circuit board compatibility?
A: Yes. The MURF860G uses TO-220FP package, while most substitutes use TO-220ACFP or ITO-220AC packages. These variants have identical pin spacing and mounting hole patterns but differ in tab isolation and physical dimensions. Verify that the circuit board layout accommodates the specific package variant, particularly regarding heat sink mounting, clearance to adjacent components, and tab isolation requirements.
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