MURA260T3G Equivalent & Substitute Parts

Part Overview

The MURA260T3G is a general-purpose rectifier diode manufactured by onsemi, rated for 600 V DC reverse voltage and 2 A average rectified current in a surface mount SMA package. This fast recovery diode features a reverse recovery time of 75 ns and operates across a junction temperature range of -65°C to 175°C. The part is RoHS3 compliant and carries an unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design requirements permit operation within alternative electrical and mechanical specifications. Substitute selection must maintain compatibility with the 600 V voltage rating, surface mount SMA packaging, and application-specific current and thermal requirements.

Key Parameters

Parameter	MURA260T3G Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	1.45 @ 2 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	5	µA @ 600 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AC, SMA	—
Operating Temperature - Junction	-65 to 175	°C
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MURA260T3G is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Voltage - DC Reverse (Vr) (Max): 600 V minimum
Package / Case: DO-214AC or SMA equivalent
Mounting Type: Surface Mount
RoHS3 Compliance
Moisture Sensitivity Level: MSL 1

Application-Dependent Criteria:

Current - Average Rectified (Io): 2 A or higher
Speed Classification: Fast Recovery (≤ 500ns) or Standard Recovery (> 500ns) based on circuit requirements
Reverse Recovery Time (trr): Lower values reduce switching losses
Operating Temperature Range: Must encompass application requirements
Forward Voltage (Vf): Affects power dissipation and thermal performance

Substitute parts are grouped into two categories:

Direct Substitutes (Equivalent Current Rating): Parts rated for 2 A average rectified current with 600 V reverse voltage, maintaining fast recovery characteristics and full temperature range compatibility.

Functional Substitutes (Reduced Current Rating): Parts rated for 1 A or 1.5 A average rectified current with 600 V reverse voltage. These are suitable only when circuit design permits operation at lower current levels or when the MURA260T3G is used below its rated current capacity.

Functional Substitutes (Increased Current Rating): Parts rated for 3 A average rectified current with 600 V reverse voltage. These provide additional current margin and are suitable for applications requiring higher current capacity.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	trr [ns]	Ir @ Vr [µA]	Tj (Max) [°C]	Package	Status
MURA260T3G	onsemi	600	2	1.45 @ 2 A	Fast Recovery ≤ 500ns	75	5 @ 600 V	175	DO-214AC, SMA	Active
BYG20J-E3/TR	Vishay General Semiconductor - Diodes Division	600	1.5	1.4 @ 1.5 A	Fast Recovery ≤ 500ns	75	1 @ 600 V	150	DO-214AC, SMA	Active
S1J-E3/61T	Vishay General Semiconductor - Diodes Division	600	1	1.1 @ 1 A	Standard Recovery > 500ns	1800	1 @ 600 V	150	DO-214AC, SMA	Active
S2JA-13-F	Diodes Incorporated	600	1.5	1.15 @ 1.5 A	Standard Recovery > 500ns	—	5 @ 600 V	150	DO-214AC, SMA	Active
STTH1L06A	STMicroelectronics	600	1	1.3 @ 1 A	Fast Recovery ≤ 500ns	80	1 @ 600 V	175	DO-214AC, SMA	Active
STTH1R06A	STMicroelectronics	600	1	1.7 @ 1 A	Fast Recovery ≤ 500ns	45	1 @ 600 V	175	DO-214AC, SMA	Active
STTH2R06A	STMicroelectronics	600	2	1.7 @ 2 A	Fast Recovery ≤ 500ns	50	2 @ 600 V	175	DO-214AC, SMA	Active
US2JA-TP	Micro Commercial Co	600	2	1.7 @ 2 A	Fast Recovery ≤ 500ns	75	5 @ 600 V	150	DO-214AC, SMA	Active
VS-3EMH06-M3/5AT	Vishay General Semiconductor - Diodes Division	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	25	3 @ 600 V	175	DO-214AC, SMA	Active
RR2L6SDDTE25	Rohm Semiconductor	600	2	1.1 @ 2 A	Standard Recovery > 500ns	—	10 @ 600 V	150	DO-214AC, SMA	Not For New Designs

Engineering Selection Recommendations

Direct Equivalent Substitutes (2 A Rating):

STTH2R06A (STMicroelectronics) and US2JA-TP (Micro Commercial Co) are direct functional equivalents to the MURA260T3G. Both parts maintain the 600 V reverse voltage rating, 2 A average rectified current, fast recovery speed classification, and surface mount SMA packaging. STTH2R06A offers an extended operating temperature range to 175°C, matching the MURA260T3G specification. US2JA-TP operates to 150°C maximum junction temperature. Both parts are RoHS3 compliant with MSL 1 rating and are classified as Active products.

Reduced Current Substitutes (1.5 A Rating):

BYG20J-E3/TR (Vishay General Semiconductor - Diodes Division) and S2JA-13-F (Diodes Incorporated) are rated for 1.5 A average rectified current. BYG20J-E3/TR features fast recovery characteristics (75 ns trr) and operates to 150°C. S2JA-13-F employs standard recovery technology and also operates to 150°C. These parts are suitable for applications where the circuit operates below the 2 A rating of the MURA260T3G. Both are RoHS3 compliant with MSL 1 rating and Active product status.

Reduced Current Substitutes (1 A Rating):

STTH1L06A and STTH1R06A (STMicroelectronics) and S1J-E3/61T (Vishay General Semiconductor - Diodes Division) are rated for 1 A average rectified current. STTH1L06A and STTH1R06A feature fast recovery characteristics and operate to 175°C, providing full temperature range compatibility with the MURA260T3G. S1J-E3/61T employs standard recovery technology and operates to 150°C. These parts are suitable only for applications where circuit design permits 1 A operation. All three are RoHS3 compliant with MSL 1 rating and Active product status.

Increased Current Substitute (3 A Rating):

VS-3EMH06-M3/5AT (Vishay General Semiconductor - Diodes Division) is rated for 3 A average rectified current with 600 V reverse voltage. This part features fast recovery characteristics (25 ns trr), operates to 175°C, and is RoHS3 compliant with MSL 1 rating. This part provides additional current margin and is suitable for applications requiring higher current capacity than the MURA260T3G.

Parts Not Recommended for New Designs:

RR2L6SDDTE25 (Rohm Semiconductor) carries a "Not For New Designs" product status and is therefore not recommended for new circuit development, despite meeting the 600 V, 2 A electrical specifications.

Frequently Asked Questions (FAQ)

Q: Can I use a 1 A rated diode as a substitute for the MURA260T3G in my application?

A: A 1 A rated diode can be used only if your circuit operates at or below 1 A average rectified current. The MURA260T3G is rated for 2 A; using a lower-rated part in an application requiring 2 A operation will result in device failure or reduced reliability. Verify your actual circuit current requirements before selecting a lower-rated substitute.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times of 500 ns or less, while standard recovery diodes exceed 500 ns. Fast recovery diodes reduce switching losses and are preferred in high-frequency switching applications. Standard recovery diodes are suitable for lower-frequency rectification. The MURA260T3G is a fast recovery device with 75 ns trr.

Q: Are all substitute parts compatible with the DO-214AC SMA package footprint?

A: Yes. All substitute parts listed are specified for DO-214AC or SMA package designation, which are equivalent surface mount packages. Footprint compatibility is maintained across all listed substitutes.

Q: Does the MURA260T3G require any special handling or storage conditions?

A: The MURA260T3G carries an MSL 1 (Unlimited) moisture sensitivity level, indicating no special moisture control requirements during storage or handling. Standard electronic component storage practices apply.

Q: Can I substitute a 3 A rated diode for the MURA260T3G?

A: Yes. The VS-3EMH06-M3/5AT is rated for 3 A and maintains all other critical specifications including 600 V reverse voltage, fast recovery characteristics, and surface mount SMA packaging. A higher-rated part provides additional current margin and is electrically compatible with the MURA260T3G.

Q: What is the significance of the 600 V reverse voltage rating?

A: The 600 V rating specifies the maximum reverse bias voltage the diode can withstand without breakdown. All substitute parts maintain this 600 V specification, ensuring compatibility with applications designed for the MURA260T3G. Using a diode with a lower voltage rating in a 600 V application will result in device failure.

Q: How does forward voltage (Vf) affect my circuit design?

A: Forward voltage represents the voltage drop across the diode during forward conduction. The MURA260T3G specifies 1.45 V at 2 A. Substitute parts show variations in Vf (ranging from 1.1 V to 1.7 V depending on the part). Higher Vf values result in greater power dissipation and heat generation. Lower Vf values reduce power loss. Select a substitute based on your thermal budget and efficiency requirements.

Q: What does RoHS3 compliance mean?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the part does not contain restricted hazardous materials including lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers. All listed substitute parts are RoHS3 compliant, matching the MURA260T3G specification.

Q: Can I use the MURA260T3G in applications requiring operation above 175°C?

A: No. The MURA260T3G maximum junction temperature is 175°C. Applications requiring higher temperature operation must select alternative parts with higher temperature ratings. All listed substitutes operate to 150°C or 175°C maximum; verify your application temperature requirements before selection.

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