MUR460GP-TP Equivalent & Substitute Parts

Part Overview

The MUR460GP-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 600 V DC reverse voltage and 4 A average rectified current in a DO-201AD axial through-hole package. This fast recovery diode with 60 ns reverse recovery time is designed for switching power supply applications and general rectification circuits. The part is currently active and in production. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to supply constraints, design flexibility, or application-specific requirements.

Substiute Parts

MUR460GP-TP
Micro Commercial CoIn Stock: 884MUR460GP-TP Datasheet
MUR460GP-TP
Current Part
1N5406-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 51561N5406-E3/54 Datasheet
1N5406-E3/54
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1N5406-G
Comchip TechnologyIn Stock: 7711N5406-G Datasheet
1N5406-G
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1N5406G
Taiwan Semiconductor CorporationIn Stock: 24281N5406G Datasheet
1N5406G
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1N5406RLG
onsemiIn Stock: 168171N5406RLG Datasheet
1N5406RLG
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31GF6-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 414731GF6-E3/54 Datasheet
31GF6-E3/54
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BYV28-600-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 8353BYV28-600-TAP Datasheet
BYV28-600-TAP
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EGP30J
onsemiIn Stock: 300485EGP30J Datasheet
EGP30J
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MR856G
onsemiIn Stock: 3225MR856G Datasheet
MR856G
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MUR460RLG
onsemiIn Stock: 280545MUR460RLG Datasheet
MUR460RLG
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STTH3L06
STMicroelectronicsIn Stock: 37342STTH3L06 Datasheet
STTH3L06
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STTH3R06
STMicroelectronicsIn Stock: 1410STTH3R06 Datasheet
STTH3R06
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STTH3R06RL
STMicroelectronicsIn Stock: 2077STTH3R06RL Datasheet
STTH3R06RL
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STTH4L06
STMicroelectronicsIn Stock: 8497STTH4L06 Datasheet
STTH4L06
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STTH5L06
STMicroelectronicsIn Stock: 2571STTH5L06 Datasheet
STTH5L06
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STTH5L06RL
STMicroelectronicsIn Stock: 8195STTH5L06RL Datasheet
STTH5L06RL
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 4 A
Voltage - Forward (Vf) (Max) @ If 1.28 V @ 4 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 60 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Mounting Type Through Hole -
Package / Case DO-201AD, Axial -
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitute parts for the MUR460GP-TP are classified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 600 V minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD or equivalent axial package (DO-27, DO-201AA, SOD-64)
  • RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

  • Current - Average Rectified (Io): 3 A to 4 A range
  • Speed Classification: Fast Recovery or Standard Recovery
  • Reverse Recovery Time (trr): ≤ 500 ns preferred for switching applications
  • Operating Temperature Range: Minimum -55°C to 150°C overlap

Substitution Categories:

  1. Direct Equivalents (4 A rated): Parts with identical 4 A current rating and fast recovery characteristics
  2. Functional Equivalents (3 A to 3.5 A rated): Parts with lower current ratings but compatible voltage and package specifications, suitable for applications with reduced current demands
  3. Alternative Technology: Avalanche-rated diodes with equivalent voltage and current specifications

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] Speed trr [ns] Package Status
MUR460GP-TP Micro Commercial Co 600 4 1.28 @ 4A Fast Recovery ≤ 500ns 60 DO-201AD Active
MUR460RLG onsemi 600 4 1.28 @ 4A Fast Recovery ≤ 500ns 75 DO-201AA, DO-27, Axial Active
1N5406-E3/54 Vishay General Semiconductor - Diodes Division 600 3 1.2 @ 3A Standard Recovery >500ns - DO-201AD Active
1N5406-G Comchip Technology 600 3 1.0 @ 3A Standard Recovery >500ns - DO-201AD Active
1N5406G Taiwan Semiconductor Corporation 600 3 1.0 @ 3A Standard Recovery >500ns - DO-201AD Active
1N5406RLG onsemi 600 3 1.0 @ 3A Standard Recovery >500ns - DO-201AA, DO-27, Axial Not For New Designs
31GF6-E3/54 Vishay General Semiconductor - Diodes Division 600 3 1.6 @ 3A Fast Recovery ≤ 500ns 30 DO-201AD Active
BYV28-600-TAP Vishay General Semiconductor - Diodes Division 600 3.5 1.35 @ 5A Fast Recovery ≤ 500ns 210 SOD-64 Active
EGP30J onsemi 600 3 1.7 @ 3A Fast Recovery ≤ 500ns 75 DO-201AD Not For New Designs
MR856G onsemi 600 3 1.25 @ 3A Fast Recovery ≤ 500ns 300 DO-201AA, DO-27, Axial Active
STTH3L06 STMicroelectronics 600 3 1.3 @ 3A Fast Recovery ≤ 500ns 85 DO-201AD Active

Engineering Selection Recommendations

For Direct Current Rating Replacement (4 A):

MUR460RLG (onsemi) is the primary equivalent substitute. It maintains identical electrical specifications (600 V, 4 A, 1.28 V forward voltage at 4 A) with fast recovery characteristics (75 ns trr). The part is Active status and ROHS3 compliant. Package compatibility includes DO-201AA, DO-27, and axial configurations, providing mechanical flexibility. Operating temperature range extends to 175°C maximum junction temperature, exceeding the original specification.

For Reduced Current Applications (3 A to 3.5 A):

When circuit requirements permit lower current ratings, the following parts are suitable:

  • STTH3L06 (STMicroelectronics): Active status, fast recovery (85 ns trr), 600 V rating, 3 A current, DO-201AD package. Forward voltage of 1.3 V @ 3 A and reverse leakage of 3 µA @ 600 V provide efficient operation. ROHS3 compliant.

  • 31GF6-E3/54 (Vishay General Semiconductor - Diodes Division): Active status, fast recovery (30 ns trr), 600 V rating, 3 A current, DO-201AD package. Lowest reverse recovery time in the 3 A category. ROHS3 compliant.

  • 1N5406-E3/54 (Vishay General Semiconductor - Diodes Division): Active status, 600 V rating, 3 A current, DO-201AD package. Standard recovery characteristics (>500 ns). Forward voltage of 1.2 V @ 3 A. ROHS3 compliant.

  • MR856G (onsemi): Active status, fast recovery (300 ns trr), 600 V rating, 3 A current. Axial package configuration. ROHS3 compliant.

For Alternative Package Configurations:

BYV28-600-TAP (Vishay General Semiconductor - Diodes Division) offers avalanche technology with 600 V, 3.5 A rating in SOD-64 package. Fast recovery characteristics (210 ns trr) and extended temperature range to 175°C. Suitable when SOD-64 package is preferred over axial configuration. ROHS3 compliant.

Parts to Avoid for New Designs:

1N5406RLG (onsemi) and EGP30J (onsemi) carry "Not For New Designs" status and should not be selected for new circuit implementations, despite electrical compatibility.

Frequently Asked Questions (FAQ)

Q: Can MUR460RLG directly replace MUR460GP-TP?

A: Yes. MUR460RLG provides identical electrical specifications (600 V, 4 A, 1.28 V forward voltage, fast recovery) with equivalent or superior performance. Both are ROHS3 compliant and rated for -55°C to 150°C minimum operating range. MUR460RLG extends to 175°C maximum junction temperature. Axial package compatibility is maintained.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery time (trr) ≤ 500 ns, while standard recovery diodes exceed 500 ns. MUR460GP-TP is fast recovery (60 ns trr), suitable for switching power supplies. Standard recovery parts like 1N5406-E3/54 (>500 ns) are acceptable for lower-frequency rectification but generate more switching noise in high-frequency applications.

Q: Can I use a 3 A rated diode in place of the 4 A MUR460GP-TP?

A: Substitution is possible only if circuit analysis confirms that maximum current demand does not exceed 3 A. Parts like STTH3L06, 31GF6-E3/54, and 1N5406-E3/54 maintain 600 V voltage rating and DO-201AD package compatibility. Forward voltage and reverse recovery characteristics differ; verify thermal and switching performance for the specific application.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status and REACH Unaffected designation, meeting environmental and regulatory requirements equivalent to MUR460GP-TP.

Q: What is the significance of reverse recovery time (trr)?

A: Reverse recovery time determines switching speed and energy loss during diode turn-off. Lower trr values (MUR460GP-TP at 60 ns, 31GF6-E3/54 at 30 ns) reduce switching losses and electromagnetic interference in high-frequency circuits. Higher trr values (MR856G at 300 ns) are acceptable in lower-frequency applications but increase power dissipation.

Q: Does package type affect electrical performance?

A: Package type (DO-201AD, DO-27, DO-201AA, SOD-64) does not alter electrical specifications but affects mechanical mounting and thermal characteristics. All listed packages are axial through-hole configurations suitable for PCB insertion. SOD-64 (BYV28-600-TAP) provides compact form factor with equivalent electrical performance.

Q: Why are some parts marked "Not For New Designs"?

A: Parts with "Not For New Designs" status (1N5406RLG, EGP30J) remain available for legacy system support and repair but are not recommended for new circuit development. Active status parts should be prioritized for new designs to ensure long-term supply availability and manufacturer support.

Q: What is the operating temperature range consideration?

A: MUR460GP-TP operates from -55°C to 150°C junction temperature. Most substitutes maintain this range or extend it. MUR460RLG extends to 175°C, providing thermal margin. Verify application requirements; if circuits operate near temperature limits, select parts with extended ranges.

Q: How do forward voltage differences affect circuit design?

A: Forward voltage (Vf) varies between 1.0 V and 1.7 V across substitutes at their respective current ratings. Higher Vf increases power dissipation and heat generation. For 4 A applications, MUR460GP-TP and MUR460RLG both specify 1.28 V @ 4 A. For 3 A applications, 1N5406-G offers lowest Vf (1.0 V), reducing losses.

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