MUR410G Equivalent & Substitute Parts

Part Overview

The MUR410G is an active general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 4 A average rectified current. This through-hole axial component operates within the SWITCHMODE™ series and utilizes standard diode technology with fast recovery characteristics. The part is ROHS3 compliant and currently in active production status with 4700 units in stock.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across different package configurations or manufacturer sources. Alternative components may be required due to supply chain considerations, packaging preferences, or specific application requirements while maintaining functional equivalence.

Substiute Parts

MUR410G

onsemiIn Stock: 4799MUR410G Datasheet

Current PartRFQ

BYV28-100-TAP

Vishay General Semiconductor - Diodes DivisionIn Stock: 1676BYV28-100-TAP Datasheet

SimilarRFQ

UG4B-E3/54

Vishay General Semiconductor - Diodes DivisionIn Stock: 2953UG4B-E3/54 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the MUR410G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Voltage - DC Reverse (Vr) (Max): 100 V minimum
• Current - Average Rectified (Io): 4 A minimum
• Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Operating Temperature Range: Must encompass application requirements within -65°C to 175°C envelope

Secondary Compatibility Factors:

• Package / Case: Axial or equivalent through-hole configurations (DO-201AA, DO-27, DO-201AD)
• Reverse Recovery Time (trr): ≤ 500 ns acceptable
• Forward Voltage (Vf): Operational equivalence within 890 mV @ 4 A baseline
• Reverse Leakage Current: ≤ 5 µA @ 100 V

Substitute parts must maintain ROHS3 compliance and active product status. Parts meeting these parameters are functionally equivalent for general-purpose rectification applications requiring 100 V / 4 A performance in through-hole axial or similar package formats.

Parameter Comparison

Engineering Selection Recommendations

MUR410G (onsemi) - Primary Reference

The MUR410G serves as the baseline specification for this equivalency group. This component is actively manufactured, ROHS3 compliant, and maintains full compliance with REACH regulations. The extended operating temperature range of -65°C to 175°C provides maximum thermal envelope coverage. Standard diode technology with 35 ns reverse recovery time supports general-purpose rectification across industrial and commercial applications.

UG4B-E3/54 (Vishay) - Preferred Substitute

The UG4B-E3/54 provides direct electrical equivalence to the MUR410G with identical 100 V / 4 A ratings and standard diode technology. Forward voltage performance is comparable at 950 mV @ 4 A versus 890 mV @ 4 A. Reverse recovery time of 30 ns exceeds the MUR410G specification. The DO-201AD package maintains through-hole axial compatibility. ROHS3 compliance and active product status are confirmed. Operating temperature range of -55°C to 150°C covers standard industrial applications, with the lower minimum temperature limit (-55°C versus -65°C) representing the only thermal constraint relative to the primary part.

BYV28-100-TAP (Vishay) - Limited Substitute

The BYV28-100-TAP operates at 100 V reverse voltage with reduced current rating of 3.5 A, representing a 12.5% reduction from the 4 A MUR410G specification. Avalanche diode technology differs from the standard technology of the primary part. Forward voltage of 1.1 V @ 5 A indicates higher conduction losses. The SOD-64 package differs from standard axial configurations. This component is suitable only for applications where 3.5 A current capacity is sufficient and avalanche protection characteristics are beneficial. Operating temperature minimum of -55°C applies the same constraint as the UG4B-E3/54.

All three components maintain ROHS3 compliance, active production status, and REACH unaffected designation, confirming regulatory equivalence for component selection purposes.

Frequently Asked Questions (FAQ)

Q: Can the BYV28-100-TAP replace the MUR410G in all applications?

A: The BYV28-100-TAP is not a direct replacement for all applications. The current rating of 3.5 A is 12.5% lower than the MUR410G's 4 A specification. Applications requiring the full 4 A capacity cannot use this substitute. Additionally, the avalanche diode technology differs from the standard technology of the MUR410G, which may affect circuit behavior in specific protection scenarios.

Q: What is the primary advantage of the UG4B-E3/54 as a substitute?

A: The UG4B-E3/54 maintains electrical equivalence with the MUR410G across all critical parameters: 100 V reverse voltage, 4 A current rating, and standard diode technology. The 30 ns reverse recovery time is superior to the MUR410G's 35 ns specification. Forward voltage performance is comparable at 950 mV @ 4 A. The component is ROHS3 compliant and actively manufactured, making it a direct functional equivalent.

Q: Are there package compatibility considerations when substituting these diodes?

A: Yes. The MUR410G uses DO-201AA, DO-27, or axial packages. The UG4B-E3/54 uses DO-201AD axial package, which is mechanically compatible with standard through-hole PCB layouts. The BYV28-100-TAP uses SOD-64 package, which has different physical dimensions and pin spacing. PCB layout verification is required when switching between package types, particularly between axial and SOD-64 configurations.

Q: What is the temperature operating range constraint for substitutes?

A: The MUR410G operates from -65°C to 175°C. Both substitute parts (UG4B-E3/54 and BYV28-100-TAP) operate from -55°C to 175°C, representing a 10°C reduction in minimum operating temperature. Applications requiring operation below -55°C must use the MUR410G. The UG4B-E3/54 has an additional maximum temperature constraint of 150°C versus 175°C for the other components, limiting its use in high-temperature applications above 150°C.

Q: How do forward voltage differences affect circuit performance?

A: The MUR410G specifies 890 mV @ 4 A forward voltage, while the UG4B-E3/54 specifies 950 mV @ 4 A. This 60 mV difference represents approximately 6.7% higher conduction loss in the substitute. For low-voltage applications or high-current rectification circuits, this difference may impact efficiency and heat dissipation. The BYV28-100-TAP at 1.1 V @ 5 A shows even higher forward voltage, resulting in greater power loss.

Q: Are all three components suitable for high-frequency switching applications?

A: All three components meet the fast recovery specification of ≤ 500 ns for currents > 200 mA. The MUR410G has 35 ns reverse recovery time, while both substitutes have 30 ns. These specifications support high-frequency rectification in switching power supplies and similar applications. However, the BYV28-100-TAP's reduced current rating may limit its use in high-current switching circuits.

Q: What compliance certifications apply to all substitute parts?

A: All three components (MUR410G, UG4B-E3/54, and BYV28-100-TAP) are ROHS3 compliant and REACH unaffected. All maintain active product status with current manufacturing availability. These certifications confirm regulatory equivalence for component selection in applications subject to ROHS3 and REACH requirements.