MUR4100E Equivalent & Substitute Parts

Part Overview

The MUR4100E is a general-purpose rectifier diode manufactured by onsemi, rated for 1000 V DC reverse voltage and 4 A average rectified current in an axial through-hole package. This device is classified as obsolete, indicating that direct replacement with active production alternatives is necessary for new designs and ongoing procurement requirements. The MUR4100E belongs to the SWITCHMODE™ series and features fast recovery characteristics with a reverse recovery time of 100 ns, making it suitable for switching power supply applications.

Substiute Parts

MUR4100E
onsemiIn Stock: 4045MUR4100E Datasheet
MUR4100E
Current Part
EGP30K
Fairchild SemiconductorIn Stock: 5117EGP30K Datasheet
EGP30K
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MUR4100EG
onsemiIn Stock: 1640MUR4100EG Datasheet
MUR4100EG
Parametric Equivalent
1N5408-G
Comchip TechnologyIn Stock: 166811N5408-G Datasheet
1N5408-G
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1N5408GP-AP
Micro Commercial CoIn Stock: 10301N5408GP-AP Datasheet
1N5408GP-AP
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1N5408GP-TP
Micro Commercial CoIn Stock: 28431N5408GP-TP Datasheet
1N5408GP-TP
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60S10-TP
Micro Commercial CoIn Stock: 683760S10-TP Datasheet
60S10-TP
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FR307GP-AP
Micro Commercial CoIn Stock: 752FR307GP-AP Datasheet
FR307GP-AP
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FR307GP-TP
Micro Commercial CoIn Stock: 6024FR307GP-TP Datasheet
FR307GP-TP
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HER308G-AP
Micro Commercial CoIn Stock: 1022HER308G-AP Datasheet
HER308G-AP
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HER308G-TP
Micro Commercial CoIn Stock: 743HER308G-TP Datasheet
HER308G-TP
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HER608GP-AP
Micro Commercial CoIn Stock: 846HER608GP-AP Datasheet
HER608GP-AP
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HER608GP-TP
Micro Commercial CoIn Stock: 1258HER608GP-TP Datasheet
HER608GP-TP
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STTH310
STMicroelectronicsIn Stock: 4634STTH310 Datasheet
STTH310
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STTH310RL
STMicroelectronicsIn Stock: 10368STTH310RL Datasheet
STTH310RL
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UF5408GP-AP
Micro Commercial CoIn Stock: 846UF5408GP-AP Datasheet
UF5408GP-AP
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UF5408GP-BP
Micro Commercial CoIn Stock: 1130UF5408GP-BP Datasheet
UF5408GP-BP
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UF5408GP-TP
Micro Commercial CoIn Stock: 1803UF5408GP-TP Datasheet
UF5408GP-TP
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 4 A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 4 A V
Reverse Recovery Time (trr) 100 ns
Current - Reverse Leakage @ Vr 25 µA @ 1000 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Mounting Type Through Hole -
Package / Case DO-201AA, DO-27, Axial -
Operating Temperature - Junction -65 to 175 °C

Substitute Part Grouping Explanation

Substitution of the MUR4100E is determined by the following critical parameters:

Voltage Rating (Vr): The substitute must support a minimum of 1000 V DC reverse voltage to maintain circuit protection and reliability in the intended application.

Current Rating (Io): The substitute must support a minimum of 4 A average rectified current. Parts rated below 4 A are considered partial substitutes with current derating implications.

Recovery Characteristics: Fast recovery diodes (trr ≤ 500 ns) are preferred for switching applications but standard recovery diodes (trr > 500 ns) may be used in non-critical switching circuits.

Package Compatibility: All substitutes must use through-hole axial mounting (DO-201AD or DO-27 equivalent) to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: The substitute must support the application's thermal requirements, with the MUR4100E operating from -65°C to 175°C.

Substitutes are grouped into three categories:

  1. Parametric Equivalents: Identical electrical specifications with active product status (MUR4100EG)
  2. Full Functional Substitutes: Matching or exceeding all critical parameters with 1000 V / 4 A or higher ratings (60S10-TP)
  3. Partial Substitutes: Matching voltage rating but with reduced current capacity (1N5408-G, 1N5408GP-TP, FR307GP-TP, HER308G-TP) or reduced voltage rating (EGP30K)

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Speed Package Temp Range [°C] Product Status
MUR4100E onsemi 1000 4 1.85 @ 4A 100 Fast Recovery DO-201AA, DO-27 -65 to 175 Obsolete
MUR4100EG onsemi 1000 4 1.85 @ 4A 100 Fast Recovery DO-201AA, DO-27 -65 to 175 Active
60S10-TP Micro Commercial Co 1000 6 1.0 @ 6A - Standard Recovery DO-201AD -55 to 150 Active
1N5408-G Comchip Technology 1000 3 0.95 @ 3A - Standard Recovery DO-201AD -65 to 125 Active
1N5408GP-TP Micro Commercial Co 1000 3 1.1 @ 3A - Standard Recovery DO-201AD -55 to 150 Active
1N5408GP-AP Micro Commercial Co 1000 3 1.1 @ 3A - Standard Recovery DO-201AD -55 to 150 Active
FR307GP-TP Micro Commercial Co 1000 3 1.3 @ 3A 500 Fast Recovery DO-201AD -55 to 150 Active
FR307GP-AP Micro Commercial Co 1000 3 1.3 @ 3A 500 Fast Recovery DO-201AD -55 to 150 Active
HER308G-TP Micro Commercial Co 1000 3 1.7 @ 3A 75 Fast Recovery DO-201AD -55 to 150 Active
HER308G-AP Micro Commercial Co 1000 3 1.7 @ 3A 75 Fast Recovery DO-201AD -55 to 150 Active
EGP30K Fairchild Semiconductor 800 3 1.7 @ 3A 75 Fast Recovery DO-201AD -65 to 150 Active

Engineering Selection Recommendations

Primary Recommendation: MUR4100EG

The MUR4100EG is the direct parametric equivalent of the MUR4100E with identical electrical specifications and mechanical packaging. This part is manufactured by onsemi under active product status with ROHS3 compliance and REACH unaffected certification. The MUR4100EG maintains the same 1000 V / 4 A rating, 100 ns reverse recovery time, and -65°C to 175°C operating temperature range. Selection of MUR4100EG eliminates all substitution variables and is the preferred choice for direct replacement in existing designs.

Secondary Recommendation: 60S10-TP

The 60S10-TP manufactured by Micro Commercial Co provides a 1000 V / 6 A rating, exceeding the MUR4100E current specification by 50%. This part is suitable for applications where current margin is beneficial. The 60S10-TP features standard recovery characteristics (trr > 500 ns) and operates from -55°C to 150°C. This part is active and ROHS3 compliant. Current derating to 4 A operation is within the device capability.

Partial Substitutes: 1N5408 Series and FR307 Series

The 1N5408-G, 1N5408GP-TP, and 1N5408GP-AP variants maintain the 1000 V voltage rating but are rated for 3 A average rectified current. These parts feature standard recovery characteristics and are suitable for applications where the 4 A requirement can be reduced to 3 A through circuit redesign or where the application current demand is below 3 A. All variants are active and ROHS3 compliant.

The FR307GP-TP and FR307GP-AP variants provide 1000 V / 3 A with fast recovery characteristics (trr = 500 ns), offering improved switching performance compared to standard recovery 1N5408 devices while maintaining the same current limitation.

Fast Recovery Alternatives: HER308G Series

The HER308G-TP and HER308G-AP variants provide 1000 V / 3 A with fast recovery characteristics (trr = 75 ns), superior to the MUR4100E's 100 ns recovery time. These parts are suitable for high-frequency switching applications where the 3 A current rating is acceptable. Both variants are active and ROHS3 compliant.

Voltage-Reduced Substitute: EGP30K

The EGP30K manufactured by Fairchild Semiconductor is rated for 800 V / 3 A with fast recovery characteristics (trr = 75 ns). This part is suitable only for applications where the circuit voltage does not exceed 800 V. The reduced voltage rating limits its use to lower-voltage power supply designs. This part is active and ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can MUR4100EG be used as a direct replacement for MUR4100E?

A: Yes. The MUR4100EG is a parametric equivalent with identical voltage, current, recovery time, and temperature specifications. The only difference is product status: MUR4100E is obsolete while MUR4100EG is active. MUR4100EG is the recommended replacement.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to the reverse recovery time (trr), which is the time required for the diode to transition from conducting to blocking state. The MUR4100E has a fast recovery time of 100 ns. Standard recovery diodes (trr > 500 ns) exhibit slower transitions and generate more switching noise. Fast recovery diodes are preferred in switching power supplies to reduce switching losses and EMI.

Q: Can I use a 3 A rated diode (1N5408-G, FR307GP-TP, HER308G-TP) in place of the 4 A MUR4100E?

A: Substitution depends on the actual circuit current requirement. If the circuit operates at or below 3 A, these parts are suitable. If the circuit requires 4 A operation, these 3 A parts will exceed their rated current and reduce reliability. Circuit redesign or current limiting may be necessary.

Q: Can I use the 60S10-TP (6 A rated) instead of the MUR4100E (4 A rated)?

A: Yes. The 60S10-TP exceeds the MUR4100E current rating and is suitable for direct substitution. The higher current rating provides additional margin. However, the 60S10-TP features standard recovery characteristics (trr > 500 ns) compared to the MUR4100E's fast recovery (trr = 100 ns), which may increase switching losses in high-frequency applications.

Q: Why is the EGP30K (800 V) not recommended as a substitute?

A: The EGP30K is rated for 800 V maximum reverse voltage, which is 200 V below the MUR4100E's 1000 V rating. This part is suitable only for circuits designed for 800 V operation. Using an 800 V diode in a 1000 V circuit risks device failure and circuit damage.

Q: What is the difference between packaging options (Cut Tape, Tape & Box, Tape & Reel)?

A: Packaging refers to the form in which components are supplied. Cut Tape (CT) provides individual components on tape. Tape & Box (TB) provides components on tape in a box. Tape & Reel (TR) provides components on continuous reel. All three packaging formats contain identical electrical components; the difference is in supply format and quantity per reel or box. Selection depends on procurement volume and assembly equipment compatibility.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: What is the operating temperature range difference between MUR4100E and its substitutes?

A: The MUR4100E operates from -65°C to 175°C. Most substitutes operate from -55°C to 150°C, representing a 10°C reduction in minimum temperature and 25°C reduction in maximum temperature. For applications requiring the full -65°C to 175°C range, MUR4100EG is the only suitable substitute.

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