MUR410 Equivalent & Substitute Parts

Part Overview

The MUR410 is a general-purpose rectifier diode rated for 100 V DC reverse voltage and 4 A average rectified current, manufactured by onsemi in the SWITCHMODE™ series. The device features fast recovery characteristics with a reverse recovery time of 35 ns and is housed in a DO-201AA/DO-27 axial package for through-hole mounting applications.

The MUR410 carries an obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Direct equivalents and functionally compatible alternatives are available from multiple manufacturers with active product status and current RoHS compliance certifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	4	A
Voltage - Forward (Vf) (Max) @ If	890 mV @ 4 A	mV
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	5	µA @ 100 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Mounting Type	Through Hole	—
Package / Case	DO-201AA, DO-27, Axial	—
Operating Temperature - Junction	-65°C ~ 175°C	°C
Technology	Standard	—

Substitute Part Grouping Explanation

Substitution eligibility for the MUR410 is determined by the following critical parameters:

Mandatory Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 100 V minimum
Current - Average Rectified (Io): 4 A minimum
Mounting Type: Through Hole
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Compatible Package Formats:

DO-201AA, DO-27, SOD-64, or equivalent axial configurations

Acceptable Parameter Variations:

Forward voltage (Vf) within ±15% of 890 mV @ rated current
Reverse recovery time (trr) ≤ 35 ns
Reverse leakage current ≤ 5 µA @ rated voltage
Operating temperature range must encompass -65°C to 175°C or be compatible with application requirements

Substitute parts are classified into two categories:

Direct Equivalent: MUR410G (onsemi) — Identical electrical specifications with active product status and improved compliance certifications.

Functionally Compatible Alternatives: BYV28-100-TR, BYV28-100-TAP (Vishay), UG4B-E3/54 (Vishay), and STTH302 (STMicroelectronics) — Meet or exceed core electrical requirements with acceptable parameter variations and through-hole axial packaging.

Parameter Comparison

Parameter	MUR410	MUR410G	BYV28-100-TR	BYV28-100-TAP	UG4B-E3/54	STTH302
Manufacturer	onsemi	onsemi	Vishay	Vishay	Vishay	STMicroelectronics
Voltage - DC Reverse (Vr) (Max)	100 V	100 V	100 V	100 V	100 V	200 V
Current - Average Rectified (Io)	4 A	4 A	3.5 A	3.5 A	4 A	3 A
Voltage - Forward (Vf) (Max) @ If	890 mV @ 4 A	890 mV @ 4 A	1.1 V @ 5 A	1.1 V @ 5 A	950 mV @ 4 A	950 mV @ 3 A
Reverse Recovery Time (trr)	35 ns	35 ns	30 ns	30 ns	30 ns	35 ns
Current - Reverse Leakage @ Vr	5 µA @ 100 V	5 µA @ 100 V	1 µA @ 100 V	1 µA @ 100 V	5 µA @ 100 V	3 µA @ 200 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	DO-201AA, DO-27, Axial	DO-201AA, DO-27, Axial	SOD-64, Axial	SOD-64, Axial	DO-201AD, Axial	DO-201AD, Axial
Operating Temperature - Junction	-65°C ~ 175°C	-65°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 150°C	Max 175°C
Technology	Standard	Standard	Avalanche	Avalanche	Standard	Standard
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: MUR410G

The MUR410G is the direct equivalent replacement for the obsolete MUR410. Both devices share identical electrical specifications, including 100 V reverse voltage rating, 4 A average rectified current, 890 mV forward voltage drop at 4 A, and 35 ns reverse recovery time. The MUR410G maintains active product status and carries ROHS3 compliance certification, addressing regulatory requirements for new designs and production continuity. Packaging compatibility is maintained across DO-201AA and DO-27 axial formats. This substitution requires no circuit redesign or thermal management adjustments.

Secondary Recommendations: UG4B-E3/54

The UG4B-E3/54 (Vishay) provides functional equivalence with matching 100 V reverse voltage and 4 A current ratings. Forward voltage is 950 mV @ 4 A, representing a 6.7% increase over the MUR410 specification. Reverse recovery time is 30 ns, exceeding the MUR410 performance. The device is packaged in DO-201AD axial format and carries ROHS3 compliance. Operating temperature range extends to -55°C minimum, which is acceptable for applications not requiring the full -65°C lower limit of the original device. This substitution is suitable for applications where the slightly elevated forward voltage drop is acceptable.

Tertiary Recommendations: BYV28-100-TR and BYV28-100-TAP

The BYV28 series (Vishay) devices feature avalanche technology with 100 V reverse voltage rating and 3.5 A current capacity. Forward voltage is specified at 1.1 V @ 5 A, representing approximately 23.6% higher voltage drop compared to the MUR410 at equivalent current levels. Reverse recovery time is 30 ns. These devices are suitable for applications where the 4 A current requirement can be reduced to 3.5 A or where the higher forward voltage drop is acceptable. Operating temperature range is -55°C to 175°C. BYV28-100-TR is supplied in Tape & Reel format; BYV28-100-TAP is supplied in Cut Tape format. Both carry ROHS3 compliance.

Alternative Consideration: STTH302

The STTH302 (STMicroelectronics) is rated for 200 V reverse voltage and 3 A average rectified current. This device is suitable only for applications where the 100 V voltage rating is insufficient and where the 3 A current capacity is adequate. Forward voltage is 950 mV @ 3 A. Reverse recovery time is 35 ns, matching the MUR410 specification. The device is packaged in DO-201AD axial format and carries ROHS3 compliance. This substitution is not recommended as a direct replacement due to reduced current capacity but may be considered for designs requiring higher voltage ratings.

Frequently Asked Questions (FAQ)

Q: Can MUR410G be used as a direct replacement for MUR410 without circuit modifications?

A: Yes. The MUR410G is electrically and mechanically identical to the MUR410, with matching voltage ratings (100 V), current capacity (4 A), forward voltage drop (890 mV @ 4 A), and reverse recovery time (35 ns). Packaging compatibility is maintained in DO-201AA and DO-27 axial formats. No circuit redesign is required.

Q: What is the primary difference between MUR410 and UG4B-E3/54?

A: Both devices share 100 V reverse voltage and 4 A current ratings. The UG4B-E3/54 exhibits a forward voltage drop of 950 mV @ 4 A compared to 890 mV for the MUR410, representing a 6.7% increase. Reverse recovery time is 30 ns for the UG4B-E3/54 versus 35 ns for the MUR410. The UG4B-E3/54 is packaged in DO-201AD format. These differences are acceptable in most applications where power dissipation and switching speed are not critical constraints.

Q: Why do BYV28-100-TR and BYV28-100-TAP have lower current ratings than MUR410?

A: The BYV28 series is rated for 3.5 A average rectified current, compared to 4 A for the MUR410. This represents a 12.5% reduction in current capacity. These devices employ avalanche technology, which provides different performance characteristics. Substitution is appropriate only for applications where the 3.5 A rating is sufficient or where the design can be modified to accommodate reduced current capacity.

Q: What packaging formats are available for MUR410 substitutes?

A: MUR410G maintains the original DO-201AA and DO-27 axial packaging. UG4B-E3/54 and STTH302 are supplied in DO-201AD axial format. BYV28-100-TR is supplied in Tape & Reel format; BYV28-100-TAP is supplied in Cut Tape format. All devices feature through-hole axial mounting compatibility with standard PCB layouts designed for axial diodes.

Q: Are all substitute parts RoHS compliant?

A: Yes. MUR410G, UG4B-E3/54, BYV28-100-TR, BYV28-100-TAP, and STTH302 all carry ROHS3 compliance certification. The original MUR410 is RoHS non-compliant. Substitution with any of these alternatives satisfies RoHS regulatory requirements for new designs and production.

Q: What is the operating temperature range for each substitute?

A: MUR410G maintains the original range of -65°C to 175°C. UG4B-E3/54 operates from -55°C to 150°C. BYV28-100-TR and BYV28-100-TAP operate from -55°C to 175°C. STTH302 is rated to a maximum of 175°C. Applications requiring operation below -55°C must use MUR410G.

Q: How does forward voltage drop affect circuit performance?

A: Forward voltage drop determines power dissipation in the diode and affects circuit efficiency. MUR410 and MUR410G specify 890 mV @ 4 A. UG4B-E3/54 specifies 950 mV @ 4 A (6.7% higher). BYV28 series specifies 1.1 V @ 5 A (23.6% higher at equivalent current). STTH302 specifies 950 mV @ 3 A. Higher forward voltage results in increased heat generation. Substitution with higher forward voltage devices is acceptable where thermal management capacity exists.

Q: What does reverse recovery time indicate?

A: Reverse recovery time (trr) is the interval required for a diode to transition from forward conduction to reverse blocking after the applied voltage reverses. Shorter recovery times reduce switching losses and electromagnetic interference. MUR410 and STTH302 specify 35 ns. UG4B-E3/54, BYV28-100-TR, and BYV28-100-TAP specify 30 ns. All devices meet fast recovery classification (≤ 500 ns). Substitution with equal or shorter recovery times is acceptable.

Q: Can STTH302 replace MUR410 in all applications?

A: No. STTH302 is rated for 200 V reverse voltage and 3 A average rectified current, compared to 100 V and 4 A for MUR410. The reduced current capacity (25% lower) makes STTH302 unsuitable as a direct replacement. STTH302 is appropriate only for applications where higher voltage rating is required and where the 3 A current capacity is adequate.

Q: What is the significance of avalanche technology in BYV28 devices?

A: Avalanche technology provides enhanced reverse voltage protection through controlled breakdown characteristics. BYV28-100-TR and BYV28-100-TAP employ avalanche technology, whereas MUR410, MUR410G, UG4B-E3/54, and STTH302 use standard technology. Avalanche diodes offer superior transient protection but exhibit higher forward voltage drops. Substitution is appropriate where the higher forward voltage is acceptable and where avalanche protection characteristics are beneficial.

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