MUR180-TP Equivalent & Substitute Parts

Part Overview

The MUR180-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 800 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole axial package. This part is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. The MUR180-TP features fast recovery characteristics with a reverse recovery time of 75 ns, making it suitable for applications requiring rapid switching performance in rectification circuits.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	800	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.75 V @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	5	µA @ 800 V
Capacitance @ Vr, F	20	pF @ 4V, 1MHz
Mounting Type	Through Hole	-
Package / Case	DO-204AL, DO-41, Axial	-
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the MUR180-TP is determined by the following critical parameters:

Mandatory Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 800 V minimum
Current - Average Rectified (Io): 1 A minimum
Mounting Type: Through Hole
Package compatibility: DO-41 axial or equivalent form factor

Performance Considerations:

Speed classification: Fast recovery (≤ 500ns) or standard recovery (> 500ns) based on application requirements
Reverse recovery time (trr): Affects switching performance in high-frequency applications
Forward voltage (Vf): Influences power dissipation and thermal characteristics
Reverse leakage current: Affects standby power consumption

Substitute parts are grouped into two categories:

Category A - Fast Recovery Diodes (≤ 500ns): Parts with reverse recovery time specifications matching or exceeding the MUR180-TP performance envelope. These include BYV26DGP-E3/54 and BYV26DGP-E3/73, which maintain fast recovery characteristics suitable for switching applications.

Category B - Standard Recovery Diodes (> 500ns): Parts with standard recovery characteristics including 1N4006-T, 1N4006FFG, 1N4006G, 1N4006G-T, 1N4006RLG, 1N4248GP-E3/54, and 1N4248GP-E3/73. These provide equivalent voltage and current ratings with different recovery performance profiles.

Category C - Elevated Voltage Rating: The D7G-T provides 1000 V reverse voltage rating, suitable for applications requiring higher voltage margin while maintaining 1 A current capacity.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Status
MUR180-TP	Micro Commercial Co	800	1	1.75 @ 1A	Fast Recovery ≤ 500ns	75	5 @ 800V	DO-41	-55 to 150	Obsolete
1N4006-T	Diodes Incorporated	800	1	1 @ 1A	Standard Recovery > 500ns	-	5 @ 800V	DO-41	-65 to 150	Last Time Buy
1N4006FFG	onsemi	800	1	1.1 @ 1A	Standard Recovery > 500ns	-	10 @ 800V	Axial	-65 to 175	Last Time Buy
1N4006G	Taiwan Semiconductor Corporation	800	1	1 @ 1A	Standard Recovery > 500ns	-	5 @ 800V	DO-204AL (DO-41)	-55 to 150	Active
1N4006G-T	Diodes Incorporated	800	1	1 @ 1A	Standard Recovery > 500ns	2000	5 @ 800V	DO-41	-65 to 175	Active
1N4006RLG	onsemi	800	1	1.1 @ 1A	Standard Recovery > 500ns	-	10 @ 800V	Axial	-65 to 175	Not For New Designs
1N4248GP-E3/54	Vishay General Semiconductor - Diodes Division	800	1	1.2 @ 1A	Standard Recovery > 500ns	-	1 @ 800V	DO-204AL (DO-41)	-65 to 160	Active
1N4248GP-E3/73	Vishay General Semiconductor - Diodes Division	800	1	1.2 @ 1A	Standard Recovery > 500ns	-	1 @ 800V	DO-204AL (DO-41)	-65 to 160	Active
BYV26DGP-E3/54	Vishay General Semiconductor - Diodes Division	800	1	2.5 @ 1A	Fast Recovery ≤ 500ns	75	5 @ 800V	DO-204AC (DO-15)	-65 to 175	Active
BYV26DGP-E3/73	Vishay General Semiconductor - Diodes Division	800	1	2.5 @ 1A	Fast Recovery ≤ 500ns	75	5 @ 800V	DO-204AC (DO-15)	-65 to 175	Active
D7G-T	Diodes Incorporated	1000	1	1 @ 1A	Standard Recovery > 500ns	2000	5 @ 1000V	T-1	-65 to 150	Active

Engineering Selection Recommendations

For Direct Replacement (Electrical Equivalence):

The 1N4006G-T (Diodes Incorporated) and 1N4006G (Taiwan Semiconductor Corporation) provide the closest electrical equivalence to the MUR180-TP. Both maintain 800 V reverse voltage and 1 A current ratings with DO-41 package compatibility. The 1N4006G-T is currently in active production status with extended temperature range (-65°C to 175°C) and ROHS3 compliance, making it suitable for new designs requiring MUR180-TP replacement.

For Fast Recovery Applications:

The BYV26DGP-E3/54 and BYV26DGP-E3/73 (Vishay General Semiconductor - Diodes Division) maintain the fast recovery characteristic (75 ns trr) matching the MUR180-TP performance envelope. Both parts are active production items with ROHS3 compliance. Note that these parts use DO-204AC (DO-15) package format rather than DO-41, requiring PCB layout modification. Forward voltage is elevated at 2.5 V compared to 1.75 V for the MUR180-TP.

For Higher Voltage Margin:

The D7G-T (Diodes Incorporated) provides 1000 V reverse voltage rating while maintaining 1 A current capacity. This part is active production with ROHS3 compliance and is suitable for applications requiring additional voltage safety margin. Package format is T-1 axial, differing from DO-41.

For Standard Recovery Applications:

The 1N4248GP-E3/54 and 1N4248GP-E3/73 (Vishay General Semiconductor - Diodes Division, SUPERECTIFIER® series) offer reduced reverse leakage current (1 µA versus 5 µA) with standard recovery characteristics. Both are active production items with ROHS3 compliance and DO-204AL (DO-41) package compatibility.

Compliance and Availability:

All recommended substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the MUR180-TP regulatory profile. Parts designated as "Active" production status are preferred for new designs. Parts with "Last Time Buy" or "Not For New Designs" status should be evaluated for long-term supply chain risk.

Frequently Asked Questions (FAQ)

Q: Can the 1N4006-T directly replace the MUR180-TP in existing designs?

A: The 1N4006-T provides electrical equivalence with matching 800 V reverse voltage and 1 A current ratings in DO-41 package. However, the 1N4006-T uses standard recovery (> 500ns) versus the MUR180-TP fast recovery (≤ 500ns). Direct substitution is acceptable for applications where switching speed is not critical. For high-frequency switching circuits, fast recovery alternatives such as BYV26DGP-E3/54 should be evaluated.

Q: What is the difference between DO-41 and DO-204AL packaging?

A: DO-41 and DO-204AL are equivalent designations for the same axial through-hole package format. Both refer to a cylindrical component with leads at each end, suitable for insertion into standard PCB holes. Parts specified as DO-204AL (DO-41) or DO-41 are mechanically and electrically interchangeable from a package perspective.

Q: Why do some substitute parts have higher forward voltage (Vf)?

A: Forward voltage variation reflects differences in semiconductor material composition and doping profiles between manufacturers. The BYV26DGP series shows 2.5 V forward voltage compared to 1.75 V for the MUR180-TP. Higher forward voltage increases power dissipation in the diode. Applications sensitive to thermal performance should calculate power dissipation (P = Vf × I) to verify thermal management adequacy.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this reference maintain ROHS3 compliance status, matching the MUR180-TP regulatory requirement. REACH status is unaffected for all parts, indicating no substance of very high concern (SVHC) restrictions apply.

Q: What does "Not For New Designs" status mean?

A: Parts designated "Not For New Designs" (such as 1N4006RLG) are in production but manufacturers recommend against their use in new circuit designs. These parts may have limited long-term availability or represent older technology. For new designs, parts with "Active" status are preferred.

Q: Can the D7G-T be used as a direct replacement despite higher voltage rating?

A: The D7G-T provides 1000 V reverse voltage versus 800 V for the MUR180-TP, offering additional voltage margin. However, the D7G-T uses T-1 package format rather than DO-41, requiring PCB layout modification. Electrical substitution is valid for applications where the higher voltage rating is acceptable and package change is feasible.

Q: How does reverse recovery time (trr) affect circuit performance?

A: Reverse recovery time determines how quickly the diode transitions from conducting to blocking state. Shorter trr (75 ns for MUR180-TP and BYV26DGP series) reduces switching losses and electromagnetic interference in high-frequency applications. Standard recovery diodes (trr > 500ns or 2 µs) are suitable for lower-frequency rectification where switching speed is not performance-limiting.

Q: What is the significance of reverse leakage current (Ir)?

A: Reverse leakage current represents the small current flowing through the diode when reverse-biased. Lower leakage current reduces standby power consumption and heat generation. The 1N4248GP series shows 1 µA leakage versus 5 µA for the MUR180-TP, providing improved efficiency in applications with extended idle periods.

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