MUR110RL Equivalent & Substitute Parts

Part Overview

The MUR110RL is a general-purpose rectifier diode rated for 100 V DC reverse voltage and 1 A average rectified current, manufactured by onsemi in the SWITCHMODE™ series. This component features fast recovery characteristics with a reverse recovery time of 35 ns and is housed in a DO-204AL (DO-41) axial package for through-hole mounting applications.

The MUR110RL is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades. Active alternatives with identical or superior electrical characteristics are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 1 A	mV
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	2	µA @ 100 V
Mounting Type	Through Hole	—
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction	-65°C ~ 175°C	°C

Substitute Part Grouping Explanation

Substitution of the MUR110RL is determined by the following critical parameters:

Electrical Compatibility Requirements:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
Current - Average Rectified (Io): Must equal or exceed 1 A
Mounting Type: Must be Through Hole
Package / Case: Must be compatible with DO-204AL, DO-41, or Axial configurations

Recovery Characteristics:

Speed classification (Fast Recovery or Standard Recovery) affects switching performance
Reverse Recovery Time (trr) influences high-frequency circuit behavior

Thermal Performance:

Operating Temperature - Junction range must accommodate application requirements

Substitute parts are grouped into two categories:

Direct Equivalent (Identical Electrical and Mechanical Specifications): Parts that match all critical parameters including voltage rating, current rating, recovery speed, and package type.

Functional Equivalent (Compatible Electrical Performance with Package Compatibility): Parts that meet or exceed voltage and current ratings, maintain through-hole axial mounting, and provide compatible recovery characteristics, though specific parameter values may differ within acceptable ranges.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Product Status	RoHS Status
MUR110RL	onsemi	100	1	875 @ 1 A	Fast Recovery ≤ 500ns	35	2 @ 100 V	DO-204AL, DO-41, Axial	Obsolete	RoHS non-compliant
MUR110RLG	onsemi	100	1	875 @ 1 A	Fast Recovery ≤ 500ns	35	2 @ 100 V	DO-204AL, DO-41, Axial	Active	ROHS3 Compliant
1N4002G	Taiwan Semiconductor Corporation	100	1	1000 @ 1 A	Standard Recovery >500ns	—	5 @ 100 V	DO-204AL, DO-41, Axial	Active	ROHS3 Compliant
1N4934G	Taiwan Semiconductor Corporation	100	1	1200 @ 1 A	Fast Recovery ≤ 500ns	200	5 @ 100 V	DO-204AL, DO-41, Axial	Active	ROHS3 Compliant
EGP10B	Fairchild Semiconductor	100	1	950 @ 1 A	Fast Recovery ≤ 500ns	50	5 @ 100 V	DO-204AL, DO-41, Axial	Active	—
1N4002-E3/54	Vishay General Semiconductor - Diodes Division	100	1	1100 @ 1 A	Standard Recovery >500ns	—	5 @ 100 V	DO-204AL, DO-41, Axial	Active	ROHS3 Compliant
1N4002E-E3/53	Vishay General Semiconductor - Diodes Division	100	1	1100 @ 1 A	Standard Recovery >500ns	—	5 @ 100 V	DO-204AL, DO-41, Axial	Active	ROHS3 Compliant
1N4934-E3/54	Vishay General Semiconductor - Diodes Division	100	1	1200 @ 1 A	Fast Recovery ≤ 500ns	200	5 @ 100 V	DO-204AL, DO-41, Axial	Active	ROHS3 Compliant
1N4934GP-AP	Micro Commercial Co	100	1	1200 @ 1 A	Fast Recovery ≤ 500ns	200	5 @ 100 V	DO-204AL, DO-41, Axial	Active	ROHS3 Compliant
1N6077	Microchip Technology	100	1.3	1760 @ 18.8 A	Fast Recovery ≤ 500ns	30	5 @ 100 V	A, Axial	Active	RoHS non-compliant
BYT54B-TAP	Vishay General Semiconductor - Diodes Division	100	1.25	1500 @ 1 A	Fast Recovery ≤ 500ns	100	5 @ 100 V	SOD-57, Axial	Active	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: MUR110RLG

The MUR110RLG is the direct equivalent replacement for the obsolete MUR110RL. Both parts are manufactured by onsemi and share identical electrical specifications: 100 V reverse voltage rating, 1 A average rectified current, 875 mV forward voltage drop at 1 A, and 35 ns reverse recovery time. The MUR110RLG is currently in active production status and is ROHS3 compliant, addressing regulatory requirements for new designs. This part provides seamless substitution with no circuit redesign required.

Secondary Recommendations for Fast Recovery Applications:

For applications requiring fast recovery characteristics (≤ 500 ns) with active product status and RoHS compliance:

EGP10B (Fairchild Semiconductor): Matches voltage and current ratings with 950 mV forward voltage and 50 ns reverse recovery time. Available in bulk packaging with high inventory levels.
1N4934-E3/54 (Vishay General Semiconductor - Diodes Division): Provides fast recovery performance with 200 ns reverse recovery time and ROHS3 compliance. Available in cut tape packaging.
1N4934GP-AP (Micro Commercial Co): Equivalent fast recovery characteristics to the 1N4934-E3/54 variant with ROHS3 compliance.

Alternative for Standard Recovery Applications:

For applications where standard recovery characteristics (> 500 ns) are acceptable:

1N4002-E3/54 or 1N4002E-E3/53 (Vishay General Semiconductor - Diodes Division): Both provide 100 V / 1 A ratings with ROHS3 compliance and standard recovery performance. These parts offer higher inventory availability.

Higher Current Capability Options:

1N6077 (Microchip Technology): Rated for 1.3 A average rectified current at 100 V with fast recovery characteristics and 30 ns reverse recovery time. Suitable for applications requiring current margin above 1 A. Note: RoHS non-compliant status.
BYT54B-TAP (Vishay General Semiconductor - Diodes Division): Avalanche diode rated for 1.25 A at 100 V with fast recovery and ROHS3 compliance. Housed in SOD-57 package for applications requiring different form factors.

Compliance Considerations:

All recommended active substitutes except 1N6077 are ROHS3 compliant. For new designs subject to RoHS regulations, select from MUR110RLG, EGP10B, 1N4934 variants, 1N4002 variants, or BYT54B-TAP.

Frequently Asked Questions (FAQ)

Q: Can MUR110RLG directly replace MUR110RL without circuit modification?

A: Yes. The MUR110RLG is the direct equivalent with identical electrical specifications and package configuration. No circuit redesign is required. The primary difference is product status (active vs. obsolete) and RoHS compliance.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times ≤ 500 ns, while standard recovery diodes exceed 500 ns. Fast recovery diodes switch more quickly, reducing switching losses in high-frequency applications. Standard recovery diodes are suitable for lower-frequency rectification circuits. The MUR110RL and its direct equivalent MUR110RLG are fast recovery devices with 35 ns reverse recovery time.

Q: Are all substitute parts available in the same package as MUR110RL?

A: Most substitutes are available in DO-204AL (DO-41) axial packages compatible with MUR110RL. The exception is BYT54B-TAP, which uses SOD-57 package. The 1N6077 uses an A (axial) package. Verify package compatibility with your PCB layout before selection.

Q: What does RoHS compliance mean for component selection?

A: RoHS (Restriction of Hazardous Substances) compliance indicates the component meets regulatory requirements for lead-free manufacturing and restricted substance limits. ROHS3 compliant parts are required for most new commercial and industrial designs. MUR110RL is RoHS non-compliant; MUR110RLG and most active substitutes are ROHS3 compliant.

Q: Can I use a 1N4002 series diode instead of MUR110RL?

A: The 1N4002-E3/54 and 1N4002E-E3/53 meet the 100 V / 1 A electrical requirements and are pin-compatible in axial packages. However, they are standard recovery devices (> 500 ns) compared to the MUR110RL's fast recovery (35 ns). Use 1N4002 variants only if your circuit does not require fast recovery performance. For applications sensitive to switching speed, select fast recovery alternatives like MUR110RLG or EGP10B.

Q: Why would I choose 1N6077 or BYT54B-TAP over direct equivalents?

A: The 1N6077 provides higher current capability (1.3 A vs. 1 A) with superior reverse recovery time (30 ns), suitable for applications requiring current margin. The BYT54B-TAP is an avalanche diode with higher current rating (1.25 A) and ROHS3 compliance, offering enhanced overvoltage protection. Select these only if your application requires their specific advantages.

Q: What inventory considerations should influence my selection?

A: Inventory levels vary significantly among substitutes. MUR110RLG has 8,855 units in stock, while EGP10B has 66,152 units. For high-volume production, select parts with adequate inventory depth. For low-volume or prototype applications, any active substitute with available stock is suitable.

Q: Are there any thermal performance differences between substitutes?

A: Operating temperature ranges vary slightly. MUR110RL and MUR110RLG operate from -65°C to 175°C. Most substitutes operate from -55°C to 150°C, except BYT54B-TAP which extends to 175°C. For applications requiring the full -65°C lower limit, MUR110RLG is the only active substitute matching this specification.

Q: How do forward voltage drops affect circuit performance?

A: Forward voltage (Vf) varies among substitutes: MUR110RL/MUR110RLG at 875 mV, EGP10B at 950 mV, 1N4002 variants at 1100 mV, and 1N4934 variants at 1200 mV. Higher forward voltage increases power dissipation and heat generation. For power-sensitive applications, select lower Vf options. For general rectification, differences are typically negligible.

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