MUR1100-AP Equivalent & Substitute Parts

Part Overview

The MUR1100-AP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 1000 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole package. This component is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The MUR1100-AP operates across a junction temperature range of -50°C to 150°C and features fast recovery characteristics with a reverse recovery time of 75 nanoseconds. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging and product status constraints.

Substiute Parts

MUR1100-AP
Micro Commercial CoIn Stock: 1110MUR1100-AP Datasheet
MUR1100-AP
Current Part
UF4007GP-AP
Micro Commercial CoIn Stock: 3078UF4007GP-AP Datasheet
UF4007GP-AP
Direct
BA159G A0G
Taiwan Semiconductor CorporationIn Stock: 1297BA159G A0G Datasheet
BA159G A0G
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Mounting Type Through Hole -
Package / Case DO-204AL, DO-41, Axial -
Operating Temperature - Junction -50 to 150 °C
Technology Standard -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitute parts for the MUR1100-AP are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 1000 V minimum
  • Current - Average Rectified (Io): 1 A minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial configurations
  • Technology: Standard rectifier diode technology

Acceptable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: Up to 1.75 V @ 1 A
  • Reverse Recovery Time (trr): Up to 75 ns (fast recovery classification)
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature - Junction: Minimum -50°C to maximum 150°C
  • RoHS Status: ROHS3 Compliant

Substitute parts must satisfy all critical matching parameters. Variations in forward voltage, recovery time, and leakage current are acceptable provided they remain within the specified ranges and do not degrade circuit performance.

Parameter Comparison

Parameter MUR1100-AP UF4007GP-AP BA159G A0G
Manufacturer Micro Commercial Co Micro Commercial Co Taiwan Semiconductor Corporation
Product Status Obsolete Active Active
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1 A 1 A 1 A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A 1.7 V @ 1 A 1.2 V @ 1 A
Reverse Recovery Time (trr) 75 ns 75 ns 250 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 20 pF @ 4V, 1MHz 10 pF @ 4V, 1MHz 15 pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Operating Temperature - Junction -50 to 150°C -55 to 150°C -55 to 150°C
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

UF4007GP-AP (Micro Commercial Co)

The UF4007GP-AP is a direct substitute for the MUR1100-AP. Both components are manufactured by Micro Commercial Co and share identical voltage and current ratings. The UF4007GP-AP is currently in active production status, ensuring long-term availability and supply chain continuity. Forward voltage is marginally lower at 1.7 V compared to 1.75 V, and reverse recovery time is identical at 75 nanoseconds. The UF4007GP-AP operates across an extended lower temperature range (-55°C to 150°C) compared to the MUR1100-AP (-50°C to 150°C). Both components are ROHS3 compliant with MSL rating of 1 (Unlimited). The UF4007GP-AP is supplied in Cut Tape packaging with 3049 pieces currently in stock.

BA159G A0G (Taiwan Semiconductor Corporation)

The BA159G A0G is a similar substitute manufactured by Taiwan Semiconductor Corporation. It meets all critical electrical parameters with 1000 V reverse voltage and 1 A average rectified current ratings. The BA159G A0G exhibits superior forward voltage performance at 1.2 V @ 1 A, reducing power dissipation in rectification circuits. However, the reverse recovery time is 250 nanoseconds, which is significantly longer than the MUR1100-AP specification of 75 nanoseconds. This characteristic makes the BA159G A0G suitable for applications where fast recovery is not a primary design constraint. The BA159G A0G is active in production, ROHS3 compliant, and available in 1287 pieces in stock. Operating temperature range extends to -55°C minimum, providing enhanced low-temperature performance.

Frequently Asked Questions (FAQ)

Q: Can the UF4007GP-AP directly replace the MUR1100-AP in all applications?

A: The UF4007GP-AP meets all critical electrical specifications for the MUR1100-AP, including voltage, current, and recovery time ratings. Both components share identical fast recovery characteristics (75 ns) and are manufactured by the same supplier. The UF4007GP-AP is suitable for direct substitution in applications where the MUR1100-AP was originally specified.

Q: What is the primary difference between the UF4007GP-AP and BA159G A0G?

A: The primary difference is reverse recovery time. The UF4007GP-AP maintains the fast recovery specification of 75 nanoseconds, matching the MUR1100-AP. The BA159G A0G has a reverse recovery time of 250 nanoseconds, which is acceptable for general-purpose rectification but not for applications requiring fast switching characteristics. The BA159G A0G offers lower forward voltage (1.2 V versus 1.7 V), reducing power dissipation.

Q: Are all substitute parts available in the same packaging?

A: All three components (MUR1100-AP, UF4007GP-AP, and BA159G A0G) are available in DO-204AL, DO-41, and Axial package configurations. The MUR1100-AP and UF4007GP-AP are supplied in their respective standard packages (DO-41), while the BA159G A0G is supplied in DO-204AL (DO-41) designation. Physical dimensions and pin configurations are compatible across all three parts.

Q: What is the impact of forward voltage differences on circuit design?

A: Forward voltage differences affect power dissipation and voltage drop across the diode during conduction. The MUR1100-AP specifies 1.75 V maximum, the UF4007GP-AP specifies 1.7 V maximum, and the BA159G A0G specifies 1.2 V maximum at 1 A. Lower forward voltage reduces heat generation and improves circuit efficiency. Selection depends on thermal management requirements and circuit voltage margins.

Q: Are all substitute parts RoHS compliant?

A: Yes, all three components (MUR1100-AP, UF4007GP-AP, and BA159G A0G) are ROHS3 compliant and carry MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.

Q: Why is the MUR1100-AP classified as obsolete?

A: The MUR1100-AP is classified as obsolete by the manufacturer. The UF4007GP-AP and BA159G A0G are active production alternatives that provide equivalent or superior electrical performance with assured long-term availability.

Q: Which substitute part should be selected for new designs?

A: For new designs requiring fast recovery characteristics identical to the MUR1100-AP, the UF4007GP-AP is the recommended selection. It is manufactured by the same supplier as the original part, maintains identical recovery time specifications, and is in active production. For applications where fast recovery is not critical and lower power dissipation is beneficial, the BA159G A0G is an alternative option.

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