MUR105RL Equivalent & Substitute Parts

Part Overview

The MUR105RL is a general-purpose rectifier diode manufactured by onsemi, rated for 50 V DC reverse voltage and 1 A average rectified current in an axial through-hole package (DO-204AL/DO-41). This device is classified as obsolete and operates across a junction temperature range of -65°C to 175°C. The part belongs to the SWITCHMODE™ series and features fast recovery characteristics with a reverse recovery time of 35 nanoseconds.

Due to the obsolete product status of the MUR105RL, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	MUR105RL Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 1 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	2	µA @ 50 V
Mounting Type	Through Hole	—
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction	-65 to 175	°C
Product Status	Obsolete	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitution of the MUR105RL is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 50 V minimum
Current - Average Rectified (Io): 1 A minimum
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, or Axial compatible

Secondary Compatibility Factors:

Speed Classification: Fast Recovery (≤ 500ns) preferred for equivalent performance
Reverse Recovery Time (trr): Lower values indicate superior switching characteristics
Forward Voltage (Vf): Values within 875 mV to 1.2 V @ 1 A are acceptable
Reverse Leakage Current: 2 µA to 5 µA @ 50 V acceptable range
Operating Temperature Range: Minimum -55°C to 150°C required

Substitute parts are grouped into two categories:

Category A - Fast Recovery Equivalents (trr ≤ 500ns): Parts with fast recovery characteristics matching or exceeding the MUR105RL performance profile. These include 1N4933-E3/54, 1N4933G, 1N4933GP-AP, EGP10A-E3/54, EGP10A-E3/73, and BYT54A-TAP.

Category B - Standard Recovery Alternatives (trr > 500ns): Parts with standard recovery characteristics suitable for general-purpose rectification applications. These include 1N4001G and 1N4001-BP.

All substitute parts maintain the 50 V / 1 A electrical specification and through-hole axial mounting configuration. Parts with higher current ratings (1.25 A to 1.3 A) are included as they provide additional design margin while maintaining voltage compatibility.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Tj Range [°C]	Status	RoHS
MUR105RL	onsemi	50	1	875 @ 1A	Fast Recovery ≤ 500ns	35	2 @ 50V	DO-204AL/DO-41	-65 to 175	Obsolete	Non-compliant
1N4001G	Taiwan Semiconductor Corporation	50	1	1000 @ 1A	Standard Recovery >500ns	—	5 @ 50V	DO-204AL/DO-41	-55 to 150	Active	ROHS3 Compliant
1N4933G	Good-Ark Semiconductor	50	1	1200 @ 1A	Fast Recovery ≤ 500ns	200	5 @ 50V	DO-204AL/DO-41	-55 to 125	Active	ROHS3 Compliant
1N4001-BP	Micro Commercial Co	50	1	1000 @ 1A	Standard Recovery >500ns	2000	5 @ 50V	DO-204AL/DO-41	-55 to 150	Active	ROHS3 Compliant
1N4933-E3/54	Vishay General Semiconductor - Diodes Division	50	1	1200 @ 1A	Fast Recovery ≤ 500ns	200	5 @ 50V	DO-204AL/DO-41	-50 to 150	Active	ROHS3 Compliant
1N4933GP-AP	Micro Commercial Co	50	1	1200 @ 1A	Fast Recovery ≤ 500ns	200	5 @ 50V	DO-204AL/DO-41	-55 to 150	Active	ROHS3 Compliant
1N6076	Microchip Technology	50	1.3	1760 @ 18.8A	Fast Recovery ≤ 500ns	30	5 @ 50V	A, Axial	-65 to 155	Active	Non-compliant
BYT54A-TAP	Vishay General Semiconductor - Diodes Division	50	1.25	1500 @ 1A	Fast Recovery ≤ 500ns	100	5 @ 50V	SOD-57, Axial	-55 to 175	Active	ROHS3 Compliant
EGP10A-E3/54	Vishay General Semiconductor - Diodes Division	50	1	950 @ 1A	Fast Recovery ≤ 500ns	50	5 @ 50V	DO-204AL/DO-41	-65 to 150	Active	ROHS3 Compliant
EGP10A-E3/73	Vishay General Semiconductor - Diodes Division	50	1	950 @ 1A	Fast Recovery ≤ 500ns	50	5 @ 50V	DO-204AL/DO-41	-65 to 150	Active	ROHS3 Compliant
GP10A-E3/54	Vishay General Semiconductor - Diodes Division	50	1	1100 @ 1A	Standard Recovery >500ns	3000	5 @ 50V	DO-204AL/DO-41	-65 to 175	Active	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Electrical Equivalence with Fast Recovery Performance:

The EGP10A-E3/54 and EGP10A-E3/73 (Vishay SUPERECTIFIER® series) provide the closest electrical match to the MUR105RL. Both parts deliver 50 V / 1 A specifications with fast recovery characteristics (50 ns trr), forward voltage of 950 mV @ 1 A, and operating temperature range of -65°C to 150°C. Both are ROHS3 compliant and active products with established supply chains. The primary difference between these two variants is packaging designation; both are suitable for direct substitution in DO-204AL/DO-41 axial through-hole applications.

For Active Product Status with RoHS Compliance:

The 1N4933-E3/54 (Vishay) and 1N4933GP-AP (Micro Commercial Co) are fast recovery alternatives rated 50 V / 1 A with 200 ns reverse recovery time. Both are ROHS3 compliant and active products. The 1N4933-E3/54 operates across -50°C to 150°C, while the 1N4933GP-AP extends to -55°C to 150°C. Forward voltage is 1.2 V @ 1 A for both parts.

For Extended Temperature Range:

The GP10A-E3/54 (Vishay SUPERECTIFIER® series) maintains the full -65°C to 175°C operating range of the original MUR105RL while providing ROHS3 compliance and active product status. This part features standard recovery characteristics (3 µs trr) and forward voltage of 1.1 V @ 1 A.

For Higher Current Margin:

The 1N6076 (Microchip Technology) provides 50 V / 1.3 A rating with fast recovery (30 ns trr), offering additional current capacity. Operating temperature range is -65°C to 155°C. This part is RoHS non-compliant, matching the original MUR105RL compliance status.

The BYT54A-TAP (Vishay) offers 50 V / 1.25 A with avalanche technology, fast recovery (100 ns trr), and ROHS3 compliance. Operating range extends to -55°C to 175°C in SOD-57 axial package.

For Standard Recovery Applications:

The 1N4001G (Taiwan Semiconductor Corporation) and 1N4001-BP (Micro Commercial Co) are standard recovery alternatives rated 50 V / 1 A with forward voltage of 1.0 V @ 1 A. Both are ROHS3 compliant and active products suitable for non-critical switching applications where fast recovery is not required.

Frequently Asked Questions (FAQ)

Q: Can the MUR105RL be directly replaced with any of these substitute parts?

A: Direct replacement depends on application requirements. For switching power supply applications requiring fast recovery characteristics, use EGP10A-E3/54, EGP10A-E3/73, 1N4933-E3/54, or 1N4933GP-AP. For general-purpose rectification, 1N4001G or 1N4001-BP are suitable. All listed parts maintain the 50 V / 1 A electrical specification and through-hole axial mounting.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (trr ≤ 500ns) switch off more quickly, reducing reverse recovery current and switching losses in high-frequency applications. Standard recovery diodes (trr > 500ns) are suitable for lower-frequency rectification where switching speed is less critical. The MUR105RL is a fast recovery device; equivalent substitutes should maintain this characteristic for identical performance.

Q: Are all substitute parts RoHS compliant?

A: Most substitute parts listed are ROHS3 compliant. The exceptions are 1N6076 (Microchip Technology), which is RoHS non-compliant, matching the original MUR105RL status. For applications requiring RoHS compliance, select from the ROHS3 compliant alternatives.

Q: Can I use a higher current-rated diode as a substitute?

A: Yes. The 1N6076 (1.3 A) and BYT54A-TAP (1.25 A) provide higher current ratings while maintaining 50 V reverse voltage. These parts offer additional design margin and are electrically compatible with 1 A circuit requirements. Verify that the package and mounting configuration match your PCB layout.

Q: What is the significance of forward voltage (Vf) differences?

A: Forward voltage affects power dissipation and voltage drop across the diode during conduction. The MUR105RL specifies 875 mV @ 1 A. Substitute parts range from 950 mV to 1.2 V @ 1 A. Higher forward voltage results in slightly increased heat generation. For thermal-sensitive applications, select EGP10A-E3/54 or EGP10A-E3/73 (950 mV) to minimize dissipation.

Q: Do package differences affect substitution?

A: All listed substitute parts are available in DO-204AL/DO-41 axial through-hole packages compatible with the MUR105RL footprint, except BYT54A-TAP which uses SOD-57 package. Verify PCB pad spacing and lead diameter compatibility before substitution. The BYT54A-TAP requires different PCB layout accommodation due to its SOD-57 package geometry.

Q: What is the operating temperature range consideration?

A: The MUR105RL operates from -65°C to 175°C. Most substitute parts operate from -55°C to 150°C, providing slightly narrower range. For applications requiring the full -65°C to 175°C range, select EGP10A-E3/54, EGP10A-E3/73, GP10A-E3/54, or 1N6076. Verify your application's actual temperature requirements before selecting based on this parameter.

Q: Which substitute offers the best reverse recovery time performance?

A: The 1N6076 (Microchip Technology) provides the fastest reverse recovery time at 30 ns, followed by EGP10A-E3/54 and EGP10A-E3/73 at 50 ns. The MUR105RL specifies 35 ns. For applications sensitive to reverse recovery characteristics, these three parts provide superior or equivalent performance.

Q: Are there inventory considerations for these substitutes?

A: Inventory levels vary by part and supplier. EGP10A-E3/54 (1,242 pcs), 1N4933-E3/54 (14,607 pcs), and 1N4001-BP (845 pcs) show strong availability. Verify current stock status with your component supplier before design finalization.

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