MTY100N10E Equivalent & Substitute Parts

Part Overview

The MTY100N10E is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage and 100A continuous drain current in a Through Hole TO-264 package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity. The part delivers 300W maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Substiute Parts

MTY100N10E
onsemiIn Stock: 14280MTY100N10E Datasheet
MTY100N10E
Current Part
APT10M09LVFRG
Microchip TechnologyIn Stock: 1120APT10M09LVFRG Datasheet
APT10M09LVFRG
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IXFK100N10
IXYSIn Stock: 2249IXFK100N10 Datasheet
IXFK100N10
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IXTK170N10P
IXYSIn Stock: 1497IXTK170N10P Datasheet
IXTK170N10P
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Key Parameters

Parameter Value
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 10640 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitution of the MTY100N10E is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Drain to Source Voltage (Vdss): Must equal or exceed 100V
  • Current - Continuous Drain (Id): Must equal or exceed 100A at 25°C
  • Gate-Source Voltage (Vgs): Must support ±20V operation
  • Operating Temperature Range: Must encompass -55°C to 150°C minimum

Mechanical Compatibility Requirements:

  • Mounting Type: Through Hole
  • Package / Case: TO-264-3 or TO-264AA

Regulatory & Compliance Considerations:

  • RoHS Status: Compliance status noted for design requirements
  • REACH Status: All parts listed as REACH Unaffected
  • Moisture Sensitivity Level: MSL 1 (Unlimited)

Substitute parts must satisfy all electrical parameters at or above the MTY100N10E specifications while maintaining identical mechanical packaging and mounting characteristics.

Parameter Comparison

Parameter MTY100N10E (onsemi) APT10M09LVFRG (Microchip) IXFK100N10 (IXYS) IXTK170N10P (IXYS)
FET Type N-Channel N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc) 170A (Tc)
Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V 9mOhm @ 50A, 10V 12mOhm @ 75A, 10V 9mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs 378 nC @ 10 V 350 nC @ 10 V 360 nC @ 10 V 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 10640 pF @ 25 V 9875 pF @ 25 V 9000 pF @ 25 V 6000 pF @ 25 V
Power Dissipation (Max) 300W (Tc) Not specified 500W (Tc) 715W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Not specified -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA
Product Status Obsolete Active Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

APT10M09LVFRG (Microchip Technology)

This substitute meets all electrical requirements of the MTY100N10E with equivalent 100V/100A ratings and identical TO-264 packaging. The APT10M09LVFRG demonstrates improved on-resistance (9mOhm vs. 11mOhm) and reduced gate charge (350nC vs. 378nC), resulting in lower switching losses. The part carries ROHS3 compliance and Active product status, ensuring long-term availability and regulatory alignment. This is the preferred direct replacement for new designs and existing applications requiring minimal circuit modification.

IXFK100N10 (IXYS)

This substitute provides equivalent 100V/100A electrical specifications with identical TO-264 packaging. The IXFK100N10 offers enhanced power dissipation capability (500W vs. 300W) and maintains the same operating temperature range. Gate charge and input capacitance remain within comparable ranges. ROHS3 compliance and Active product status support procurement continuity. This option is suitable for applications where increased thermal headroom is beneficial.

IXTK170N10P (IXYS)

This substitute exceeds the MTY100N10E specifications with 170A continuous drain current while maintaining 100V voltage rating and TO-264 packaging. The IXTK170N10P delivers superior performance characteristics including lower on-resistance (9mOhm), reduced gate charge (198nC), and lower input capacitance (6000pF). Power dissipation reaches 715W with extended operating temperature to 175°C. This option is applicable for designs requiring higher current capacity or improved thermal performance. ROHS3 compliance and Active status ensure regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the APT10M09LVFRG directly replace the MTY100N10E without circuit modification?

A: Yes. The APT10M09LVFRG maintains identical electrical ratings (100V/100A), gate-source voltage specifications (±20V), and TO-264 package configuration. Improved on-resistance and gate charge characteristics result in lower power dissipation and faster switching, which are beneficial in most applications.

Q: What is the primary reason for substituting the MTY100N10E?

A: The MTY100N10E is classified as obsolete. Substitute parts with Active product status ensure ongoing availability, supply chain reliability, and access to current manufacturing processes and quality standards.

Q: Are all substitute parts RoHS compliant?

A: The APT10M09LVFRG, IXFK100N10, and IXTK170N10P are all ROHS3 compliant. The original MTY100N10E is RoHS non-compliant. Applications requiring RoHS compliance must transition to one of the substitute parts.

Q: Can the IXTK170N10P be used in place of the MTY100N10E?

A: Yes. The IXTK170N10P exceeds all electrical requirements with 170A continuous drain current, 100V voltage rating, and TO-264 packaging. The higher current rating and improved thermal characteristics make it suitable for the MTY100N10E application with no circuit modifications required.

Q: What are the key differences in gate charge between these parts?

A: The MTY100N10E specifies 378nC gate charge at 10V. The APT10M09LVFRG and IXFK100N10 provide 350nC and 360nC respectively, while the IXTK170N10P delivers 198nC. Lower gate charge reduces driver power requirements and enables faster switching transitions.

Q: Are all substitute parts available in the same TO-264 package configuration?

A: Yes. All substitute parts are available in TO-264-3 and TO-264AA package configurations, ensuring mechanical and thermal interface compatibility with existing PCB designs.

Q: What is the operating temperature range for each substitute?

A: The APT10M09LVFRG operating temperature is not specified in available data. The IXFK100N10 operates from -55°C to 150°C, matching the MTY100N10E. The IXTK170N10P extends to -55°C to 175°C, providing wider temperature margin.

Q: Which substitute offers the best thermal performance?

A: The IXTK170N10P provides the highest power dissipation rating at 715W, compared to 500W for the IXFK100N10 and 300W for the MTY100N10E. This enables operation at higher current levels or ambient temperatures with reduced junction temperature rise.

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