MTP6P20E Equivalent & Substitute Parts

Part Overview

The MTP6P20E is a P-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage and 6A continuous drain current in a Through Hole TO-220 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The part delivers 75W maximum power dissipation and operates across the temperature range of -55°C to 150°C (junction temperature).

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	200	V
Current - Continuous Drain (Id) @ 25°C	6	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1	Ohm @ 3A, 10V
Power Dissipation (Max)	75	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the MTP6P20E is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

FET Type: P-Channel (required)
Drain to Source Voltage (Vdss): 200V (required)
Package / Case: TO-220-3 (required for mechanical compatibility)
Operating Temperature Range: -55°C to 150°C (required)
Vgs (Max): ±20V (required for gate drive compatibility)

Functional Compatibility Parameters:

Drive Voltage (Max Rds On): 10V (required for gate drive circuit compatibility)
Vgs(th) (Max) @ Id: 4V @ 250µA (required for threshold voltage matching)

The IRF9610PBF meets all critical matching parameters. However, the substitute part exhibits reduced continuous drain current (1.8A versus 6A) and lower maximum power dissipation (20W versus 75W). These reductions establish a one-directional substitution relationship: the MTP6P20E cannot substitute for the IRF9610PBF in applications requiring the full 6A current rating, but the IRF9610PBF is suitable for applications where current requirements do not exceed 1.8A.

Parameter Comparison

Parameter	MTP6P20E (onsemi)	IRF9610PBF (Vishay Siliconix)	Unit
FET Type	P-Channel	P-Channel	—
Drain to Source Voltage (Vdss)	200	200	V
Current - Continuous Drain (Id) @ 25°C	6	1.8	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	1 @ 3A, 10V	3 @ 900mA, 10V	Ohm
Vgs(th) (Max) @ Id	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	30 @ 10V	11 @ 10V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	750 @ 25V	170 @ 25V	pF
Power Dissipation (Max)	75	20	W
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-220-3	TO-220-3	—

Engineering Selection Recommendations

MTP6P20E (onsemi) — Obsolete Status: The MTP6P20E is classified as obsolete. While 3211 pieces remain in stock, this part number is no longer in active production. For new designs or long-term procurement, alternative parts should be evaluated.

IRF9610PBF (Vishay Siliconix) — Active Status: The IRF9610PBF is an active product with 40468 pieces in stock. This part is RoHS3 compliant and REACH affected, meeting current regulatory requirements. The IRF9610PBF is suitable as a substitute for the MTP6P20E in applications where the continuous drain current requirement does not exceed 1.8A and power dissipation does not exceed 20W.

Compliance Considerations: The MTP6P20E is RoHS non-compliant and REACH unaffected. The IRF9610PBF is RoHS3 compliant and REACH affected. For applications subject to RoHS or REACH regulations, the IRF9610PBF is the appropriate selection.

Frequently Asked Questions (FAQ)

Q: Can the IRF9610PBF directly replace the MTP6P20E in all applications?

A: No. The IRF9610PBF has a maximum continuous drain current of 1.8A compared to the MTP6P20E's 6A rating. Substitution is valid only for applications where the actual drain current does not exceed 1.8A. Additionally, the IRF9610PBF's maximum power dissipation is 20W versus 75W for the MTP6P20E. Verify that your application's power dissipation requirements fall within the 20W limit.

Q: Are the gate drive requirements identical between these parts?

A: Yes. Both parts share identical drive voltage specifications (10V for maximum Rds On) and identical gate threshold voltage specifications (4V @ 250µA). Gate drive circuits designed for the MTP6P20E are compatible with the IRF9610PBF.

Q: What are the package compatibility considerations?

A: Both parts use the TO-220-3 package with Through Hole mounting. PCB layouts and heatsink mounting interfaces are mechanically compatible. No package-related redesign is required.

Q: Why does the IRF9610PBF have lower gate charge and input capacitance?

A: The IRF9610PBF's lower current rating (1.8A versus 6A) results in a smaller die size, which reduces parasitic capacitances. Gate charge is 11 nC for the IRF9610PBF compared to 30 nC for the MTP6P20E, and input capacitance is 170 pF versus 750 pF. These differences may improve switching speed in gate drive circuits but do not affect functional compatibility.

Q: What is the temperature operating range compatibility?

A: Both parts operate across -55°C to 150°C (junction temperature). Temperature range compatibility is identical.

Q: Are there regulatory compliance differences?

A: Yes. The MTP6P20E is RoHS non-compliant and REACH unaffected. The IRF9610PBF is RoHS3 compliant and REACH affected. For applications in regulated markets requiring RoHS compliance, the IRF9610PBF is the required selection.

Q: Can the MTP6P20E substitute for the IRF9610PBF?

A: Yes, in terms of electrical and mechanical compatibility. The MTP6P20E exceeds the IRF9610PBF's current and power ratings, making it suitable for any application where the IRF9610PBF is specified. However, the MTP6P20E's obsolete status and RoHS non-compliance make it unsuitable for new designs or regulated applications.

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