MTP2P50EG Equivalent & Substitute Parts

Part Overview

The MTP2P50EG is a P-Channel MOSFET rated for 500V drain-to-source voltage with 2A continuous drain current at 25°C, housed in a TO-220 through-hole package. Manufactured by onsemi, this device is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. The obsolete status of the MTP2P50EG makes substitute part identification critical for procurement continuity and design flexibility.

Substiute Parts

MTP2P50EG

onsemiIn Stock: 1766MTP2P50EG Datasheet

Current PartRFQ

FQP3P50

onsemiIn Stock: 23345FQP3P50 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MTP2P50EG is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• FET Type: P-Channel topology
• Drain to Source Voltage (Vdss): 500V minimum rating
• Mounting Type: Through Hole
• Package / Case: TO-220-3 physical form factor

Performance Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than 2A at 25°C
• Drive Voltage: 10V gate drive compatibility
• Rds On (Max): Electrical resistance characteristics at specified gate voltage
• Power Dissipation: Thermal capability at or above 75W

The FQP3P50 meets all mandatory matching criteria and exceeds performance specifications in drain current (2.7A), power dissipation (85W), and on-resistance characteristics, establishing it as a direct substitute for the obsolete MTP2P50EG.

Parameter Comparison

Engineering Selection Recommendations

The FQP3P50 is the appropriate substitute for the obsolete MTP2P50EG based on the following engineering factors:

Product Status Alignment: The FQP3P50 carries Active product status, ensuring long-term availability and supply chain continuity, whereas the MTP2P50EG is classified as Obsolete.

Regulatory Compliance: Both devices maintain REACH Unaffected status and EAR99 export classification, ensuring equivalent regulatory standing for international applications.

Performance Superiority: The FQP3P50 provides enhanced electrical performance across multiple parameters: increased continuous drain current (2.7A versus 2A), higher power dissipation capability (85W versus 75W), improved on-resistance characteristics (4.9Ohm versus 6Ohm), and reduced input capacitance (660pF versus 1183pF). These improvements provide design margin and enhanced thermal performance.

Package and Mounting Equivalence: Both devices utilize identical TO-220-3 through-hole packaging, enabling direct mechanical and electrical substitution without PCB redesign.

Gate Drive Compatibility: Both devices operate at 10V drive voltage with compatible gate threshold characteristics, ensuring seamless integration into existing gate drive circuits.

Frequently Asked Questions (FAQ)

Q: Can the FQP3P50 directly replace the MTP2P50EG in existing designs?

A: Yes. The FQP3P50 provides direct substitution for the MTP2P50EG. Both devices share identical P-Channel topology, 500V Vdss rating, 10V drive voltage, TO-220-3 package, and through-hole mounting. The FQP3P50 exceeds the MTP2P50EG specifications in continuous drain current, power dissipation, and on-resistance performance.

Q: What are the key differences between these two devices?

A: The primary differences are product status (FQP3P50 is Active; MTP2P50EG is Obsolete) and enhanced electrical performance in the FQP3P50. The FQP3P50 provides 2.7A continuous drain current versus 2A, 85W power dissipation versus 75W, lower on-resistance (4.9Ohm versus 6Ohm), and reduced input capacitance (660pF versus 1183pF). Gate threshold voltage differs slightly (5V versus 4V), and maximum gate voltage rating is higher (±30V versus ±20V).

Q: Are there any thermal considerations when substituting these parts?

A: The FQP3P50 provides superior thermal performance with 85W maximum power dissipation compared to 75W for the MTP2P50EG. Both devices operate across the identical temperature range (-55°C to 150°C junction temperature). The improved thermal capability of the FQP3P50 provides additional design margin in thermally constrained applications.

Q: Do these devices require different PCB layouts or mounting hardware?

A: No. Both devices use TO-220-3 through-hole packaging with identical pin configuration and mechanical dimensions. Existing PCB layouts, mounting hardware, and thermal management solutions are directly compatible without modification.

Q: What is the gate drive voltage requirement for the FQP3P50?

A: The FQP3P50 operates with a 10V drive voltage, identical to the MTP2P50EG. Gate threshold voltage is specified at 5V (250µA), and maximum gate voltage rating is ±30V. Existing gate drive circuits designed for the MTP2P50EG require no modification.

Q: Is the FQP3P50 available in the same quantities as the MTP2P50EG?

A: The FQP3P50 is available in significantly higher inventory (23,300 pieces) compared to the MTP2P50EG (1,743 pieces), reflecting its Active product status and ongoing production support.

Q: Are there any compliance or export restrictions affecting the FQP3P50?

A: Both devices maintain identical regulatory status: REACH Unaffected and EAR99 export classification. No additional compliance considerations apply to the FQP3P50 relative to the MTP2P50EG.