MTD5P06VT4G Equivalent & Substitute Parts

Part Overview

The MTD5P06VT4G is a P-Channel 60V 5A MOSFET manufactured by onsemi in DPAK surface mount packaging. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part operates across a temperature range of -55°C to 175°C and features a maximum drain-source voltage of 60V with continuous drain current capability of 5A at 25°C.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	5	A
Rds On (Max) @ Id, Vgs	450	mOhm @ 2.5A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	510	pF @ 25V
Power Dissipation (Max)	2.1 (Ta), 40 (Tc)	W
Operating Temperature Range	-55 to 175	°C
Package Type	DPAK (TO-252-3)	Surface Mount
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the MTD5P06VT4G is determined by the following critical parameters:

Primary Matching Criteria:

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): Equal to or greater than 5A
Package Type: DPAK (TO-252-3) surface mount
Operating Temperature Range: Minimum -55°C to 175°C

Secondary Compatibility Parameters:

Gate Threshold Voltage Vgs(th): 2.5V to 4V @ 250µA
Maximum Gate Voltage (Vgs): ±15V or greater
Rds On characteristics at specified gate voltage
Gate Charge (Qg) and Input Capacitance (Ciss) for switching performance

The substitute parts listed below meet or exceed the primary matching criteria and maintain functional compatibility within the specified electrical and thermal operating envelope.

Parameter Comparison

Parameter	MTD5P06VT4G	NTD2955T4G	DMP6185SK3-13	IRFR9010TRPBF	IRFR9014PBF	PJD9P06A_L2_00001
Manufacturer	onsemi	onsemi	Diodes Incorporated	Vishay Siliconix	Vishay Siliconix	Panjit International Inc.
Product Status	Obsolete	Active	Active	Active	Active	Active
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vdss (V)	60	60	60	50	60	60
Id @ 25°C (A)	5	12	9.4	5.3	5.1	2.5 (Ta), 7 (Tc)
Rds On (Max) @ 10V (mOhm)	450 @ 2.5A	180 @ 6A	150 @ 12A	500 @ 2.8A	500 @ 3.1A	190 @ 3.5A
Vgs(th) (Max) @ 250µA (V)	4	4	3	4	4	2.5
Gate Charge Qg (Max) @ 10V (nC)	20	30	14	9.1	12	8.3
Ciss (Max) @ Vds (pF)	510 @ 25V	750 @ 25V	708 @ 30V	240 @ 25V	270 @ 25V	430 @ 30V
Power Dissipation (Max) (W)	2.1 (Ta), 40 (Tc)	55 (Tj)	1.6 (Ta)	25 (Tc)	2.5 (Ta), 25 (Tc)	2 (Ta), 15.6 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	DPAK (TO-252-3)	DPAK (TO-252-3)	TO-252-3	DPAK (TO-252-3)	DPAK (TO-252-3)	TO-252
Vgs (Max) (±V)	±15	±20	±20	±20	±20	±20
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: NTD2955T4G (onsemi)

The NTD2955T4G is the preferred substitute for the MTD5P06VT4G. Both devices are manufactured by onsemi and share identical Vdss (60V) and package specifications (DPAK TO-252-3). The NTD2955T4G provides superior current handling capability (12A versus 5A) and improved Rds On performance (180 mOhm versus 450 mOhm), enabling direct replacement with enhanced performance margins. The device maintains the same operating temperature range (-55°C to 175°C) and is ROHS3 compliant with active product status.

Secondary Substitute: IRFR9014PBF (Vishay Siliconix)

The IRFR9014PBF offers electrical characteristics closely matched to the MTD5P06VT4G with 60V Vdss and 5.1A continuous drain current. This device is ROHS3 compliant and maintains active product status. The primary consideration is the reduced maximum operating temperature (150°C versus 175°C), which may limit applicability in high-temperature environments. Rds On performance is comparable at 500 mOhm.

Tertiary Substitute: DMP6185SK3-13 (Diodes Incorporated)

The DMP6185SK3-13 provides 60V Vdss with 9.4A continuous drain current and superior Rds On characteristics (150 mOhm). This device is ROHS3 compliant and actively produced. The maximum operating temperature is 150°C, and power dissipation at Ta is lower (1.6W) than the original part. This substitute is suitable for applications where thermal management is a primary concern.

Alternative Substitute: IRFR9010TRPBF (Vishay Siliconix)

The IRFR9010TRPBF operates at reduced Vdss (50V) compared to the MTD5P06VT4G (60V). This device is suitable only for applications where the 50V rating is acceptable and provides no margin for voltage transients. The device is ROHS3 compliant with active status and 5.3A continuous drain current.

Alternative Substitute: PJD9P06A_L2_00001 (Panjit International Inc.)

The PJD9P06A_L2_00001 provides 60V Vdss with reduced continuous drain current at Ta (2.5A) but acceptable performance at Tc (7A). This device features the lowest gate charge (8.3 nC) and threshold voltage (2.5V), enabling faster switching characteristics. The device is ROHS3 compliant with active status. Application suitability depends on thermal management capability and current requirements.

Frequently Asked Questions (FAQ)

Q: Can the NTD2955T4G directly replace the MTD5P06VT4G in all applications?

A: Yes. The NTD2955T4G meets all primary matching criteria: identical Vdss (60V), DPAK package, P-Channel MOSFET technology, and operating temperature range (-55°C to 175°C). The higher current rating (12A) and improved Rds On (180 mOhm) provide enhanced performance without functional incompatibility.

Q: What is the significance of the reduced operating temperature maximum in IRFR9014PBF and other Vishay devices?

A: The MTD5P06VT4G operates to 175°C junction temperature, while IRFR9014PBF and IRFR9010TRPBF are rated to 150°C. Applications requiring operation above 150°C must use NTD2955T4G or DMP6185SK3-13. Thermal design must account for this limitation when selecting alternatives.

Q: Why does IRFR9010TRPBF have a lower Vdss rating (50V) than the original part?

A: The IRFR9010TRPBF is rated for 50V Vdss, which is 10V lower than the MTD5P06VT4G (60V). This device is suitable only for applications where the maximum drain-source voltage does not exceed 50V. Use of this substitute in 60V-rated circuits creates risk of device failure.

Q: What does ROHS3 compliance indicate?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All active substitute parts listed are ROHS3 compliant. The original MTD5P06VT4G does not specify RoHS status due to its obsolete classification.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. Lower gate charge (IRFR9010TRPBF at 9.1 nC, PJD9P06A_L2_00001 at 8.3 nC) enables faster switching and reduced driver power dissipation. Higher gate charge (NTD2955T4G at 30 nC) requires more driver capability but may provide improved noise immunity in certain applications.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts use TO-252-3 surface mount packaging (DPAK). Physical dimensions and pin configurations are identical, enabling direct PCB footprint compatibility without layout modifications.

Q: What is the significance of Rds On variation among substitute parts?

A: Rds On (on-resistance) directly affects power dissipation and heat generation. Lower Rds On values (DMP6185SK3-13 at 150 mOhm, NTD2955T4G at 180 mOhm) reduce conduction losses compared to the original part (450 mOhm). Selection depends on thermal budget and efficiency requirements.

Q: Can PJD9P06A_L2_00001 be used in high-current applications?

A: The PJD9P06A_L2_00001 is rated for 2.5A continuous drain current at Ta (ambient temperature). At Tc (case temperature), the rating increases to 7A. This device is suitable only for applications where average current does not exceed 2.5A or where thermal management maintains case temperature within specified limits.

Q: What is MSL rating and why is it uniform across all parts?

A: Moisture Sensitivity Level (MSL) 1 (Unlimited) indicates the device has no moisture sensitivity restrictions and requires no special handling or storage conditions. All listed parts share this rating, eliminating moisture management as a selection criterion.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message