MTD2955VT4 Equivalent & Substitute Parts

Part Overview

The MTD2955VT4 is a P-Channel MOSFET rated for 60V drain-to-source voltage with 12A continuous drain current in a surface mount DPAK package. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the DPAK surface mount form factor.

Substiute Parts

MTD2955VT4

onsemiIn Stock: 85451MTD2955VT4 Datasheet

Current PartRFQ

SIHFR9024TR-GE3

Vishay SiliconixIn Stock: 2743SIHFR9024TR-GE3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the MTD2955VT4 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: Substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 60V or greater to ensure safe operation across the full voltage range of the original design.

Current Rating: The continuous drain current (Id) specification establishes the maximum current-carrying capacity. Substitute parts with lower current ratings may require circuit redesign or thermal management modifications.

On-Resistance (Rds On): The maximum on-resistance at specified gate-source voltage and drain current directly affects power dissipation and thermal performance. Higher on-resistance values increase heat generation.

Package Compatibility: The DPAK surface mount package (TO-252-3) is mandatory for direct board-level substitution without layout modifications.

Temperature Range: Operating temperature specifications must encompass the original design requirements to maintain reliability across environmental conditions.

The SIHFR9024TR-GE3 qualifies as a substitute based on matching voltage rating, package type, and gate-source voltage specifications, with documented trade-offs in current rating and on-resistance characteristics.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The MTD2955VT4 is classified as obsolete, while the SIHFR9024TR-GE3 maintains active product status with ongoing manufacturer support and availability. Active status ensures continued supply chain access and technical documentation updates.

Compliance Status: The SIHFR9024TR-GE3 is ROHS3 compliant, whereas the MTD2955VT4 is non-compliant. For applications subject to RoHS regulations or customer compliance requirements, the substitute part satisfies regulatory obligations.

Electrical Trade-offs: The SIHFR9024TR-GE3 exhibits a 26.7% reduction in continuous drain current (8.8A versus 12A) and a 30% increase in on-resistance (280mOhm versus 230mOhm). These characteristics result in lower maximum power dissipation (42W versus 60W). Circuit designs operating at or near the 12A specification require thermal and current-handling analysis to confirm compatibility.

Temperature Range: The substitute part operates to 150°C maximum junction temperature, compared to 175°C for the original. Applications requiring operation above 150°C require alternative solutions.

Gate Charge and Input Capacitance: The SIHFR9024TR-GE3 demonstrates lower gate charge (19nC versus 30nC) and input capacitance (570pF versus 770pF), resulting in faster switching characteristics and reduced driver power requirements.

Frequently Asked Questions (FAQ)

Q: Can the SIHFR9024TR-GE3 directly replace the MTD2955VT4 in existing PCB layouts?

A: Yes, both components use the DPAK (TO-252-3) surface mount package with identical pin configuration and footprint. No PCB layout modifications are required for physical substitution.

Q: What is the impact of the 3.2A reduction in continuous drain current?

A: The SIHFR9024TR-GE3 is rated for 8.8A continuous drain current versus 12A for the MTD2955VT4. Applications operating at currents exceeding 8.8A require circuit redesign or parallel device configurations. Applications operating below 8.8A are unaffected.

Q: How does the increased on-resistance affect circuit performance?

A: The SIHFR9024TR-GE3 exhibits 280mOhm on-resistance compared to 230mOhm for the MTD2955VT4. At equivalent current levels, this results in proportionally higher power dissipation and heat generation. Thermal management analysis is required for high-current applications.

Q: Is the SIHFR9024TR-GE3 suitable for applications requiring operation above 150°C?

A: No. The SIHFR9024TR-GE3 maximum junction temperature is 150°C, compared to 175°C for the MTD2955VT4. Applications requiring operation above 150°C require alternative component selection.

Q: What are the advantages of the lower gate charge specification?

A: The SIHFR9024TR-GE3 gate charge of 19nC (versus 30nC) enables faster switching transitions and reduces gate driver power consumption. This is beneficial for high-frequency switching applications and reduces thermal stress on gate drive circuits.

Q: Does RoHS3 compliance of the substitute part affect electrical performance?

A: No. RoHS3 compliance addresses material composition and environmental restrictions. Electrical performance, voltage ratings, and current specifications are independent of RoHS status.

Q: Are there alternative substitute parts available?

A: The SIHFR9024TR-GE3 documentation references additional substitutes: IRFR9024TRPBF-BE3, IRFR9024TRPBF, and IRFR9024TRLPBF. These alternatives should be evaluated against the same electrical and package compatibility criteria.