MTB30P06VT4G Equivalent & Substitute Parts

Part Overview

The MTB30P06VT4G is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 30A continuous drain current at 25°C. The device is housed in a D2PAK surface mount package and is designed for applications requiring moderate to high current switching in P-channel configurations. This part carries an obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	80	mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80	nC @ 10V
Vgs (Max)	±15	V
Input Capacitance (Ciss) (Max) @ Vds	2190	pF @ 25V
Power Dissipation (Max)	3 (Ta), 125 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Moisture Sensitivity Level (MSL)	1	Unlimited

Substitute Part Grouping Explanation

Substitution of the MTB30P06VT4G is determined by alignment across the following critical parameters:

Voltage Rating: The substitute part must maintain the 60V Vdss specification to ensure compatibility with the intended circuit voltage domain.

Current Capability: The substitute must support continuous drain current at or above the application requirement. The MTB30P06VT4G specifies 30A at Tc; substitutes with slightly lower current ratings (such as 27.5A) remain functionally equivalent when thermal management and circuit design accommodate the reduced current margin.

Package and Pinout: Both the main part and substitute must use the D2PAK (TO-263-3) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Gate Threshold Voltage (Vgs(th)): Consistency in gate threshold voltage ensures compatible gate drive requirements and switching behavior.

Temperature Range: The operating temperature range of -55°C to 175°C must be maintained to support the intended thermal environment.

Regulatory Compliance: REACH and ECCN classifications must align to support supply chain and export requirements.

The NTB25P06T4G meets these substitution criteria with equivalent voltage rating, compatible package, matching gate threshold, and identical temperature range. The slight reduction in continuous drain current (27.5A versus 30A) and gate charge (50 nC versus 80 nC) represents a minor performance trade-off that does not preclude substitution in applications where the full 30A capability is not required at maximum operating conditions.

Parameter Comparison

Parameter	MTB30P06VT4G	NTB25P06T4G	Unit
Manufacturer	onsemi	onsemi
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60	60	V
Continuous Drain Current (Id) @ 25°C	30 (Tc)	27.5 (Ta)	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	80 @ 15A, 10V	82 @ 25A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	80 @ 10V	50 @ 10V	nC
Vgs (Max)	±15	±15	V
Input Capacitance (Ciss) (Max) @ Vds	2190 @ 25V	1680 @ 25V	pF
Power Dissipation (Max)	3 (Ta), 125 (Tc)	120 (Tj)	W
Operating Temperature Range	-55 to 175	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)
Mounting Type	Surface Mount	Surface Mount
Moisture Sensitivity Level (MSL)	1	1
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99
Product Status	Obsolete	Active

Engineering Selection Recommendations

Primary Substitute: NTB25P06T4G

The NTB25P06T4G is the recommended substitute for the obsolete MTB30P06VT4G. Both devices are manufactured by onsemi and share identical voltage ratings, gate threshold specifications, and operating temperature ranges. The NTB25P06T4G maintains active product status, ensuring long-term availability and supply chain continuity.

The NTB25P06T4G exhibits a 7.5% reduction in continuous drain current (27.5A versus 30A) and lower gate charge (50 nC versus 80 nC), which results in reduced switching losses and improved gate drive efficiency. The input capacitance is also lower (1680 pF versus 2190 pF), contributing to faster switching transitions.

Both parts carry identical REACH and ECCN classifications (REACH Unaffected, EAR99), ensuring regulatory compliance alignment. The NTB25P06T4G is RoHS3 compliant, providing additional environmental compliance assurance.

Selection of the NTB25P06T4G is appropriate for applications where the continuous drain current requirement does not exceed 27.5A at the specified operating conditions. For applications requiring the full 30A capability at maximum load, thermal management and circuit design must be evaluated to confirm that the substitute part's current rating is sufficient.

Frequently Asked Questions (FAQ)

Q: Can the NTB25P06T4G directly replace the MTB30P06VT4G in existing designs?

A: The NTB25P06T4G is pin-compatible and functionally equivalent for most applications. Both devices use the D2PAK package with identical pinout. The primary consideration is the 7.5% reduction in continuous drain current (27.5A versus 30A). If the circuit operates below 27.5A continuous drain current, direct substitution is valid. For applications requiring the full 30A capability, thermal analysis and circuit validation are necessary.

Q: What is the significance of the different current measurement conditions (Tc versus Ta)?

A: The MTB30P06VT4G specifies 30A at Tc (case temperature), while the NTB25P06T4G specifies 27.5A at Ta (ambient temperature). These represent different measurement methodologies. The Tc measurement reflects the device's capability under controlled thermal conditions, while Ta measurement reflects performance under ambient conditions. Both specifications are valid; the difference reflects the thermal design and measurement approach of each device.

Q: Are there differences in gate drive requirements between these parts?

A: Both parts share identical gate threshold voltage (Vgs(th)) of 4V at 250µA and maximum gate voltage (Vgs) of ±15V. Gate drive circuits designed for the MTB30P06VT4G are directly compatible with the NTB25P06T4G. The NTB25P06T4G exhibits lower gate charge (50 nC versus 80 nC), which may result in slightly faster switching transitions and reduced gate drive power consumption.

Q: What are the thermal management implications of substitution?

A: The MTB30P06VT4G specifies 125W power dissipation at Tc, while the NTB25P06T4G specifies 120W at Tj. Both devices support similar thermal performance in the D2PAK package. The slightly lower gate charge of the NTB25P06T4G may reduce switching losses in high-frequency applications. Thermal design considerations remain consistent between the two parts.

Q: Are both parts available in the same packaging options?

A: Both the MTB30P06VT4G and NTB25P06T4G use the D2PAK (TO-263-3) surface mount package. The NTB25P06T4G is available in Cut Tape (CT) and Digi-Reel packaging options, providing flexibility in procurement quantities. PCB layout and assembly processes remain unchanged between the two parts.

Q: What is the regulatory compliance status of the substitute part?

A: The NTB25P06T4G carries REACH Unaffected and EAR99 classifications, identical to the MTB30P06VT4G. Additionally, the NTB25P06T4G is RoHS3 compliant, providing enhanced environmental compliance assurance. Both parts maintain MSL 1 (Unlimited) moisture sensitivity level, indicating no special moisture handling requirements.

Q: Why is the MTB30P06VT4G marked as obsolete?

A: The obsolete status indicates that the MTB30P06VT4G is no longer in active production. The NTB25P06T4G, with active product status, represents the current generation equivalent from onsemi. Substitution ensures access to actively supported components with guaranteed long-term availability.

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