MT4S300U(TE85L,O,F) Equivalent & Substitute Parts

Part Overview

The MT4S300U(TE85L,O,F) is an RF Transistor NPN manufactured by Toshiba Semiconductor and Storage, designed for radio-frequency applications requiring high-frequency performance up to 26.5GHz. This surface mount device operates at 4V collector-emitter breakdown voltage with a maximum power dissipation of 250mW and collector current of 50mA. The part is currently in active product status with ROHS3 compliance and unlimited moisture sensitivity rating. Identifying equivalent and substitute parts becomes necessary when addressing supply chain constraints, inventory availability, or application-specific performance requirements within defined electrical and mechanical parameters.

Substiute Parts

MT4S300U(TE85L,O,F
Toshiba Semiconductor and StorageIn Stock: 925MT4S300U(TE85L,O,F Datasheet
MT4S300U(TE85L,O,F
Current Part
BFQ790H6327XTSA1
Infineon TechnologiesIn Stock: 2425BFQ790H6327XTSA1 Datasheet
BFQ790H6327XTSA1
Similar
NSVMMBTH10LT1G
onsemiIn Stock: 30250NSVMMBTH10LT1G Datasheet
NSVMMBTH10LT1G
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 4 V
Frequency - Transition 26.5 GHz
Power - Max 250 mW
Current - Collector (Ic) (Max) 50 mA
Noise Figure (dB Typ @ f) 0.55 dB @ 2GHz
Gain 16.9 dB
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA, 3V
Mounting Type Surface Mount -
Package / Case SC-82A, SOT-343 -
Operating Temperature (Max) 150 °C (TJ)
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the MT4S300U(TE85L,O,F) is determined by alignment across the following critical parameters: transistor type (NPN), voltage rating, frequency capability, power dissipation, collector current capacity, and surface mount packaging compatibility. The substitute parts listed have been identified based on their ability to operate within the electrical envelope defined by the main part specifications.

Critical Substitution Parameters:

  • Transistor Type: NPN configuration
  • Voltage - Collector Emitter Breakdown: minimum 4V
  • Frequency - Transition: capability at or above operating frequency requirements
  • Power - Max: minimum 250mW
  • Current - Collector (Ic) (Max): minimum 50mA
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: MSL 1

The substitute parts identified are BFQ790H6327XTSA1 (Infineon Technologies) and NSVMMBTH10LT1G (onsemi). These parts share the NPN transistor type and surface mount configuration. However, each substitute exhibits distinct electrical characteristics that define their application scope relative to the main part.

Parameter Comparison

Parameter MT4S300U(TE85L,O,F) BFQ790H6327XTSA1 NSVMMBTH10LT1G
Manufacturer Toshiba Semiconductor and Storage Infineon Technologies onsemi
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4V 6.1V 25V
Frequency - Transition 26.5GHz 1.85GHz 650MHz
Noise Figure (dB Typ @ f) 0.55dB @ 2GHz 2.6dB @ 1.8GHz Not Specified
Gain 16.9dB 17dB Not Specified
Power - Max 250mW 1.5W 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA, 3V 60 @ 250mA, 5V 60 @ 4mA, 10V
Current - Collector (Ic) (Max) 50mA 300mA Not Specified
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 TO-243AA TO-236-3, SC-59, SOT-23-3
Operating Temperature (Max) 150°C (TJ) Not Specified 150°C (TJ)
Product Status Active Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

BFQ790H6327XTSA1 (Infineon Technologies): This substitute operates at a lower frequency transition of 1.85GHz compared to the main part's 26.5GHz capability. The BFQ790H6327XTSA1 provides higher power dissipation (1.5W) and collector current capacity (300mA), with a higher voltage rating of 6.1V. The part is ROHS3 compliant with MSL 1 rating. However, the product status is listed as obsolete, which may present long-term supply chain considerations. The package configuration differs (TO-243AA versus SC-82A/SOT-343), requiring PCB layout modifications.

NSVMMBTH10LT1G (onsemi): This substitute operates at 650MHz frequency transition, significantly lower than the main part's 26.5GHz. The NSVMMBTH10LT1G provides a higher voltage rating of 25V with power dissipation of 225mW, closely aligned with the main part's 250mW specification. The part maintains active product status with ROHS3 compliance and MSL 1 rating. The package configuration is SOT-23-3 (TO-236), differing from the main part's SC-82A/SOT-343 package, requiring PCB footprint redesign.

Both substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity rating consistent with the main part. Selection between substitutes depends on frequency requirements, voltage headroom needs, and package compatibility with existing PCB designs.

Frequently Asked Questions (FAQ)

Q: Can BFQ790H6327XTSA1 directly replace MT4S300U(TE85L,O,F) in high-frequency RF applications?

A: No. The BFQ790H6327XTSA1 operates at 1.85GHz transition frequency, which is substantially lower than the MT4S300U's 26.5GHz capability. This substitute is suitable only for applications operating at or below 1.85GHz. Additionally, the package configuration differs (TO-243AA versus SC-82A/SOT-343), requiring PCB redesign.

Q: Is NSVMMBTH10LT1G suitable for 26.5GHz RF applications?

A: No. The NSVMMBTH10LT1G operates at 650MHz transition frequency, making it unsuitable for applications requiring 26.5GHz performance. This substitute is applicable only to applications operating at or below 650MHz.

Q: What are the package compatibility considerations when substituting these parts?

A: The MT4S300U(TE85L,O,F) uses SC-82A and SOT-343 packages. The BFQ790H6327XTSA1 uses TO-243AA packaging, and the NSVMMBTH10LT1G uses SOT-23-3 (TO-236) packaging. Each package has different pin configurations and footprints, requiring PCB layout modifications and potential circuit board redesign.

Q: Are all listed parts ROHS3 compliant?

A: Yes. The MT4S300U(TE85L,O,F), BFQ790H6327XTSA1, and NSVMMBTH10LT1G are all ROHS3 compliant with MSL 1 (unlimited) moisture sensitivity rating.

Q: What is the significance of the BFQ790H6327XTSA1 being listed as obsolete?

A: Obsolete product status indicates that the manufacturer has discontinued active production. While inventory may be available through distributors, long-term supply availability cannot be guaranteed. Applications requiring sustained component availability should prioritize active-status alternatives.

Q: Can these substitutes be used interchangeably based on voltage ratings alone?

A: No. While voltage ratings are one consideration, frequency capability is the primary limiting factor for RF transistor substitution. The MT4S300U operates at 26.5GHz, which neither substitute can support. Substitution decisions must account for all electrical parameters including frequency, power dissipation, current capacity, and gain characteristics relative to application requirements.

Q: What is the DC Current Gain (hFE) difference between the main part and substitutes?

A: The MT4S300U has hFE of 200 @ 10mA, 3V. The BFQ790H6327XTSA1 has hFE of 60 @ 250mA, 5V, and the NSVMMBTH10LT1G has hFE of 60 @ 4mA, 10V. These measurements are taken at different bias points, making direct comparison inappropriate. Gain characteristics must be evaluated within the specific operating conditions of the target application.

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