MT47H256M8EB-3:C Equivalent & Substitute Parts

Part Overview

The MT47H256M8EB-3:C is a 2Gbit DDR2 SDRAM memory IC manufactured by Micron Technology Inc., configured as 256M x 8 with parallel interface architecture. This component operates at 333 MHz clock frequency with 450 ps access time in a 60-FBGA (9x11.5) surface mount package. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing system support and new design implementations.

Substiute Parts

MT47H256M8EB-3:C
Micron Technology Inc.In Stock: 3128MT47H256M8EB-3:C Datasheet
MT47H256M8EB-3:C
Current Part
MT47H256M8EB-25E:C
Micron Technology Inc.In Stock: 7356MT47H256M8EB-25E:C Datasheet
MT47H256M8EB-25E:C
Direct
AS4C256M8D2-25BCN
Alliance Memory, Inc.In Stock: 1213AS4C256M8D2-25BCN Datasheet
AS4C256M8D2-25BCN
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AS4C256M8D2-25BCNTR
Alliance Memory, Inc.In Stock: 729AS4C256M8D2-25BCNTR Datasheet
AS4C256M8D2-25BCNTR
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AS4C256M8D2-25BIN
Alliance Memory, Inc.In Stock: 898AS4C256M8D2-25BIN Datasheet
AS4C256M8D2-25BIN
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AS4C256M8D2-25BINTR
Alliance Memory, Inc.In Stock: 845AS4C256M8D2-25BINTR Datasheet
AS4C256M8D2-25BINTR
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IS43DR82560B-3DBLI
ISSI, Integrated Silicon Solution IncIn Stock: 851IS43DR82560B-3DBLI Datasheet
IS43DR82560B-3DBLI
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IS43DR82560C-25DBLI
ISSI, Integrated Silicon Solution IncIn Stock: 2576IS43DR82560C-25DBLI Datasheet
IS43DR82560C-25DBLI
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IS43DR82560C-25DBLI-TR
ISSI, Integrated Silicon Solution IncIn Stock: 937IS43DR82560C-25DBLI-TR Datasheet
IS43DR82560C-25DBLI-TR
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IS43DR81280C-3DBL
ISSI, Integrated Silicon Solution IncIn Stock: 1499IS43DR81280C-3DBL Datasheet
IS43DR81280C-3DBL
Parametric Equivalent
IS43DR82560B-3DBL
ISSI, Integrated Silicon Solution IncIn Stock: 1052IS43DR82560B-3DBL Datasheet
IS43DR82560B-3DBL
Parametric Equivalent
IS43DR82560C-3DBL
ISSI, Integrated Silicon Solution IncIn Stock: 1002IS43DR82560C-3DBL Datasheet
IS43DR82560C-3DBL
Parametric Equivalent

Key Parameters

Parameter Value
Memory Size 2Gbit
Memory Organization 256M x 8
Technology SDRAM - DDR2
Clock Frequency 333 MHz
Access Time 450 ps
Voltage Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Package Type 60-FBGA
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
MSL Rating 3 (168 Hours)

Substitute Part Grouping Explanation

Substitution of the MT47H256M8EB-3:C is determined by strict electrical and mechanical parameter matching within DDR2 SDRAM technology. The following criteria establish valid substitution relationships:

Primary Substitution Criteria:

  • Memory capacity: 2Gbit (256M x 8 organization)
  • Technology platform: SDRAM - DDR2
  • Memory interface: Parallel
  • Voltage supply range: 1.7V ~ 1.9V
  • Write cycle time: 15ns
  • RoHS3 compliance
  • MSL rating: 3 (168 Hours)

Performance Tier Classification:

  • Tier 1 (Direct Equivalent): Clock frequency 333 MHz, access time 450 ps
  • Tier 2 (Enhanced Performance): Clock frequency 400 MHz, access time 400 ps or 57.5 ns

Package Compatibility:

  • 60-FBGA (9x11.5) - Micron Technology
  • 60-FBGA (8x10) - Alliance Memory
  • 60-TWBGA (8x10.5 or 10.5x13) - ISSI

Packaging variants (Tray, Tape & Reel) do not affect electrical substitution but impact procurement and assembly workflows.

Parameter Comparison

Part Number Manufacturer Memory Size Organization Clock Frequency Access Time Voltage Supply Operating Temp Package Status
MT47H256M8EB-3:C Micron Technology 2Gbit 256M x 8 333 MHz 450 ps 1.7V ~ 1.9V 0°C ~ 85°C 60-FBGA (9x11.5) Obsolete
MT47H256M8EB-25E:C Micron Technology 2Gbit 256M x 8 400 MHz 400 ps 1.7V ~ 1.9V 0°C ~ 85°C 60-FBGA (9x11.5) Active
AS4C256M8D2-25BCN Alliance Memory 2Gbit 256M x 8 400 MHz 57.5 ns 1.7V ~ 1.9V 0°C ~ 95°C 60-FBGA (8x10) Active
AS4C256M8D2-25BCNTR Alliance Memory 2Gbit 256M x 8 400 MHz 57.5 ns 1.7V ~ 1.9V 0°C ~ 95°C 60-FBGA (8x10) Active
AS4C256M8D2-25BIN Alliance Memory 2Gbit 256M x 8 400 MHz 57.5 ns 1.7V ~ 1.9V -40°C ~ 95°C 60-FBGA (8x10) Active
AS4C256M8D2-25BINTR Alliance Memory 2Gbit 256M x 8 400 MHz 57.5 ns 1.7V ~ 1.9V -40°C ~ 95°C 60-FBGA (8x10) Active
IS43DR82560B-3DBLI ISSI 2Gbit 256M x 8 333 MHz 450 ps 1.7V ~ 1.9V -40°C ~ 85°C 60-TWBGA (10.5x13) Active
IS43DR82560C-25DBLI ISSI 2Gbit 256M x 8 400 MHz 400 ps 1.7V ~ 1.9V -40°C ~ 85°C 60-TWBGA (8x10.5) Active
IS43DR82560C-25DBLI-TR ISSI 2Gbit 256M x 8 400 MHz 400 ps 1.7V ~ 1.9V -40°C ~ 85°C 60-TWBGA (8x10.5) Active
IS43DR82560B-3DBL ISSI 2Gbit 256M x 8 333 MHz 450 ps 1.7V ~ 1.9V 0°C ~ 85°C 60-TWBGA (10.5x13) Active

Engineering Selection Recommendations

Direct Manufacturer Equivalent (Recommended for Micron-based designs): MT47H256M8EB-25E:C provides enhanced performance at 400 MHz with 400 ps access time while maintaining identical 60-FBGA (9x11.5) package geometry and Micron Technology manufacturing. Active product status ensures long-term availability. Electrical compatibility is complete across all critical parameters.

Alliance Memory Substitutes (Cost-optimized alternatives): AS4C256M8D2-25BCN, AS4C256M8D2-25BCNTR, AS4C256M8D2-25BIN, and AS4C256M8D2-25BINTR deliver 400 MHz performance with extended temperature range options (-40°C ~ 95°C for BIN variants). Package footprint differs (60-FBGA 8x10 versus 9x11.5), requiring PCB layout verification. All variants maintain ROHS3 compliance and MSL 3 rating.

ISSI Substitutes (Extended temperature capability): IS43DR82560B-3DBLI and IS43DR82560B-3DBL match the original 333 MHz specification with 450 ps access time. IS43DR82560C-25DBLI and IS43DR82560C-25DBLI-TR provide 400 MHz performance. All ISSI parts support -40°C lower operating limit, expanding thermal envelope. 60-TWBGA package (8x10.5 or 10.5x13) requires PCB footprint redesign.

Product Status Consideration: All recommended substitutes maintain Active product status, ensuring procurement viability and manufacturing continuity through established supply channels.

Frequently Asked Questions (FAQ)

Q: Can MT47H256M8EB-25E:C directly replace MT47H256M8EB-3:C without PCB modification? A: Yes. Both components use identical 60-FBGA (9x11.5) package geometry, electrical specifications, and Micron Technology manufacturing. The 25E variant operates at higher performance (400 MHz versus 333 MHz) and is fully backward compatible.

Q: What is the impact of switching from 60-FBGA (9x11.5) to 60-FBGA (8x10) or 60-TWBGA packages? A: Package footprint changes require PCB layout redesign, including BGA pad array repositioning and via placement. Electrical functionality remains identical. Mechanical mounting and thermal characteristics may differ slightly.

Q: Are Alliance Memory AS4C256M8D2 variants electrically equivalent to the Micron MT47H256M8EB-3:C? A: Yes, within the specified electrical parameters. All variants maintain 2Gbit capacity, 256M x 8 organization, DDR2 technology, 1.7V ~ 1.9V supply voltage, and 15ns write cycle time. Performance specifications (400 MHz, 57.5 ns access time) exceed the original part.

Q: What is the difference between AS4C256M8D2-25BIN and AS4C256M8D2-25BINTR? A: Both parts are electrically identical. The suffix TR indicates Tape & Reel packaging for automated assembly, while BIN indicates Tray packaging. Selection depends on assembly process requirements and procurement workflow.

Q: Can ISSI IS43DR82560 series parts substitute for Micron MT47H256M8EB-3:C? A: Yes, electrically. IS43DR82560B-3DBLI and IS43DR82560B-3DBL match 333 MHz / 450 ps specifications. IS43DR82560C-25DBLI and IS43DR82560C-25DBLI-TR provide enhanced 400 MHz performance. Package geometry differs (60-TWBGA versus 60-FBGA), requiring PCB redesign.

Q: Why is the original MT47H256M8EB-3:C classified as obsolete? A: Obsolete status reflects end-of-life manufacturing by Micron Technology. Active equivalent parts from Micron (MT47H256M8EB-25E:C) and alternative manufacturers (Alliance Memory, ISSI) provide continued design support and component availability.

Q: Are all substitute parts ROHS3 compliant? A: Yes. All listed substitute parts maintain ROHS3 compliance and MSL 3 (168 Hours) rating, matching the original component's environmental and regulatory specifications.

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