MT29F4G08ABADAWP-E:D Equivalent & Substitute Parts

Part Overview

The MT29F4G08ABADAWP-E:D is a 4Gbit NAND Flash memory IC manufactured by Micron Technology Inc., featuring parallel interface architecture in a 48-TFSOP package. This component is classified as obsolete, making identification of functionally equivalent alternatives essential for ongoing system support and component procurement.

The part operates within a 2.7V to 3.6V supply voltage range and supports industrial temperature specifications from 0°C to 70°C. Its 512M x 8 memory organization and parallel interface define the core functional requirements for substitute component selection.

Substiute Parts

MT29F4G08ABADAWP-E:D

Micron Technology Inc.In Stock: 1135MT29F4G08ABADAWP-E:D Datasheet

Current PartRFQ

S34ML04G200TFI000

SkyHigh Memory LimitedIn Stock: 32452S34ML04G200TFI000 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute components for the MT29F4G08ABADAWP-E:D are identified based on strict equivalence across the following critical parameters:

• Memory capacity: 4Gbit
• Memory organization: 512M x 8 configuration
• Interface type: Parallel architecture
• Package format: 48-TFSOP pinout compatibility
• Supply voltage range: 2.7V ~ 3.6V
• Operating temperature range: 0°C ~ 70°C
• Moisture sensitivity classification: MSL 3

The substitute part S34ML04G200TFI000 meets all specified electrical and mechanical requirements for direct functional replacement.

Parameter Comparison

Engineering Selection Recommendations

The S34ML04G200TFI000 manufactured by SkyHigh Memory Limited provides functional equivalence to the obsolete MT29F4G08ABADAWP-E:D across all specified electrical parameters, memory organization, and package requirements. Both components share identical ECCN and HTSUS classifications, confirming regulatory alignment.

The substitute part maintains compliance with RoHS standards and identical moisture sensitivity specifications. Selection between these components should be based on availability, procurement lead times, and supply chain requirements, as both meet the defined technical specifications for parallel NAND Flash memory applications requiring 4Gbit capacity in 48-TFSOP packaging.

Frequently Asked Questions (FAQ)

Q: Can the S34ML04G200TFI000 be used as a direct replacement for the MT29F4G08ABADAWP-E:D?

A: Yes. Both components share identical memory capacity (4Gbit), organization (512M x 8), parallel interface architecture, supply voltage range (2.7V ~ 3.6V), operating temperature specifications (0°C ~ 70°C), and 48-TFSOP package format. Pinout compatibility is maintained across all functional signal lines.

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both components carry identical ECCN (3A991B1A) and HTSUS (8542.32.0071) classifications. Both maintain RoHS compliance and MSL 3 moisture sensitivity ratings, ensuring equivalent handling and storage requirements.

Q: What is the significance of the 48-TFSOP package specification?

A: The 48-TFSOP package defines the physical footprint, pin count, and signal routing. Both the MT29F4G08ABADAWP-E:D and S34ML04G200TFI000 utilize this identical package format, ensuring PCB layout compatibility without redesign requirements.

Q: How do the supply voltage ranges affect component selection?

A: Both components operate within the 2.7V to 3.6V range, ensuring compatibility with identical power supply architectures and voltage regulation schemes. No circuit modifications are required for substitution.

Q: What does MSL 3 (168 Hours) mean for component handling?

A: MSL 3 indicates that the component can remain exposed to ambient conditions (typically 30°C/85% RH) for a maximum of 168 hours before soldering. Both parts require identical moisture control and storage protocols.