MSRF860G Equivalent & Substitute Parts Reference

Part Overview

The MSRF860G is a general-purpose rectifier diode manufactured by onsemi, rated for 600 V DC reverse voltage and 8 A average rectified current in a TO-220FP through-hole package. This component is classified as obsolete, indicating that direct procurement from the original manufacturer may be limited or unavailable. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production or repair requirements for applications utilizing this rectifier diode.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	8	A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A	V
Reverse Recovery Time (trr)	120	ns
Current - Reverse Leakage @ Vr	10	µA @ 600 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Mounting Type	Through Hole	—
Package / Case	TO-220-2 Full Pack	—
Operating Temperature - Junction	-65 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the MSRF860G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 600 V
Current - Average Rectified (Io): Must equal or exceed 8 A
Speed Classification: Must be Fast Recovery (≤ 500ns, > 200mA)
Mounting Type: Must be Through Hole
Package / Case: Must be TO-220-2 Full Pack or compatible TO-220 variant
Operating Temperature Range: Must support -65°C to 150°C junction temperature or equivalent maximum rating

Secondary Compatibility Factors:

Reverse Recovery Time (trr): Lower values indicate improved switching performance
Forward Voltage (Vf): Lower values reduce power dissipation
Reverse Leakage Current: Lower values indicate better blocking characteristics
RoHS Compliance: All substitutes must maintain ROHS3 compliance

Substitute parts are grouped based on current rating capacity. Parts rated at 8 A or higher with matching voltage and package specifications are considered direct substitutes. Parts with higher current ratings (9 A, 10 A, 12 A, 15 A, 20 A) are functionally compatible for applications where the MSRF860G is specified, provided thermal management and circuit design accommodate the different electrical characteristics.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [V]	trr [ns]	Ir @ Vr [µA]	Package	Status
MSRF860G	onsemi	600	8	1.7 @ 8A	120	10 @ 600V	TO-220FP	Obsolete
FESF8JT-E3/45	Vishay	600	8	1.5 @ 8A	50	10 @ 600V	ITO-220AC	Active
BYV29FX-600,127	WeEn Semiconductors	600	9	1.9 @ 8A	35	50 @ 600V	TO-220FP	Active
FFPF10UA60ST	onsemi	600	10	2.3 @ 10A	120	100 @ 600V	TO-220F-2L	Obsolete
DHG5I600PM	IXYS	600	5	2.2 @ 5A	35	10 @ 600V	TO-220ACFP	Active
RFNL5TJ6SGC9	Rohm Semiconductor	600	5	1.3 @ 5A	130	10 @ 600V	TO-220ACFP	Active
RFNL10TJ6SGC9	Rohm Semiconductor	600	10	1.3 @ 10A	150	10 @ 600V	TO-220ACFP	Active
RFNL12TJ6SGC9	Rohm Semiconductor	600	12	1.3 @ 12A	150	10 @ 600V	TO-220ACFP	Active
RFNL15TJ6SGC9	Rohm Semiconductor	600	15	1.3 @ 15A	160	10 @ 600V	TO-220ACFP	Active
RFNL20TJ6SGC9	Rohm Semiconductor	600	20	1.3 @ 20A	180	10 @ 600V	TO-220ACFP	Active
RFV12TJ6SGC9	Rohm Semiconductor	600	12	2.8 @ 12A	45	10 @ 600V	TO-220ACFP	Active
RFV15TJ6SGC9	Rohm Semiconductor	600	15	2.8 @ 15A	50	10 @ 600V	TO-220ACFP	Active

Engineering Selection Recommendations

Direct Current-Matched Substitutes (8 A Rating):

FESF8JT-E3/45 (Vishay) is the primary equivalent substitute for the MSRF860G. Both parts share identical voltage and current ratings (600 V, 8 A). The FESF8JT-E3/45 offers superior performance characteristics with lower forward voltage (1.5 V vs. 1.7 V) and significantly faster reverse recovery time (50 ns vs. 120 ns). The part is currently in active production status, ensuring supply availability. Package variant is ITO-220AC (isolated tab) versus TO-220FP, which is mechanically compatible for through-hole mounting applications. RoHS3 compliance is maintained.

BYV29FX-600,127 (WeEn Semiconductors) provides a 9 A rated alternative with 600 V reverse voltage. This part offers the fastest reverse recovery time (35 ns) among available substitutes and maintains the original TO-220FP package designation. Active production status supports long-term availability. Forward voltage specification (1.9 V @ 8 A) is slightly higher than the MSRF860G but within acceptable engineering tolerance for most applications.

Higher Current Capacity Substitutes:

RFNL10TJ6SGC9, RFNL12TJ6SGC9, RFNL15TJ6SGC9, and RFNL20TJ6SGC9 (Rohm Semiconductor) are rated for 10 A, 12 A, 15 A, and 20 A respectively, all at 600 V reverse voltage. These parts are functionally compatible for applications where the MSRF860G is specified, provided the circuit design and thermal management accommodate the higher current capacity. All Rohm parts feature low forward voltage (1.3 V across the rated current range) and are in active production. TO-220ACFP package is mechanically compatible with through-hole mounting requirements.

RFV12TJ6SGC9 and RFV15TJ6SGC9 (Rohm Semiconductor) offer 12 A and 15 A ratings with faster reverse recovery times (45 ns and 50 ns respectively) compared to the RFNL series, at the trade-off of higher forward voltage (2.8 V). These parts are suitable for applications prioritizing switching speed performance.

Lower Current Capacity Alternatives:

DHG5I600PM (IXYS) and RFNL5TJ6SGC9 (Rohm Semiconductor) are rated for 5 A at 600 V. These parts are not direct substitutes due to insufficient current capacity but may be considered for applications where the actual circuit current requirement is lower than the MSRF860G rating.

Compliance and Production Status:

All recommended substitute parts maintain ROHS3 compliance and REACH unaffected status, consistent with the original MSRF860G specifications. Active production status for FESF8JT-E3/45, BYV29FX-600,127, and all Rohm Semiconductor parts ensures supply chain continuity and long-term availability compared to the obsolete MSRF860G.

Frequently Asked Questions (FAQ)

Q: Can FESF8JT-E3/45 directly replace MSRF860G in existing circuit boards?

A: FESF8JT-E3/45 is electrically equivalent to MSRF860G with identical voltage (600 V) and current (8 A) ratings. The package variant is ITO-220AC (isolated tab) versus TO-220FP. Both are TO-220 through-hole packages with compatible pin configurations for PCB mounting. Verify that the isolated tab feature of the ITO-220AC does not conflict with existing thermal management or isolation requirements in your circuit design.

Q: What is the difference between TO-220FP and ITO-220AC packages?

A: Both are TO-220 through-hole packages with three leads suitable for PCB mounting. The primary difference is the tab isolation feature. TO-220FP has a standard full pack tab, while ITO-220AC features an isolated tab that is electrically isolated from the semiconductor die. This isolation may be beneficial in certain circuit topologies but requires verification against the original circuit design requirements.

Q: Can I use a higher current-rated part like RFNL10TJ6SGC9 (10 A) instead of MSRF860G (8 A)?

A: Yes, RFNL10TJ6SGC9 is functionally compatible for applications where MSRF860G is specified. The 10 A rating exceeds the 8 A requirement, providing additional current capacity margin. However, verify that your circuit design and thermal management are appropriate for the different electrical characteristics, particularly the forward voltage (1.3 V @ 10 A for RFNL10TJ6SGC9 vs. 1.7 V @ 8 A for MSRF860G) and reverse recovery time (150 ns vs. 120 ns).

Q: Why do some substitute parts have lower forward voltage than MSRF860G?

A: Forward voltage variation is a normal characteristic of semiconductor manufacturing and design differences across manufacturers. FESF8JT-E3/45 (1.5 V) and Rohm RFNL series (1.3 V) demonstrate improved forward voltage performance compared to MSRF860G (1.7 V). Lower forward voltage reduces power dissipation in the diode, which can improve overall circuit efficiency. This is a beneficial characteristic for substitution.

Q: What does reverse recovery time (trr) mean, and why does it vary among substitutes?

A: Reverse recovery time is the interval required for a forward-conducting diode to cease conduction when reverse voltage is applied. Faster recovery times (lower trr values) reduce switching losses and electromagnetic interference in high-frequency applications. FESF8JT-E3/45 (50 ns) and BYV29FX-600,127 (35 ns) offer significantly faster recovery than MSRF860G (120 ns), making them superior choices for switching power supply applications. Slower recovery times (RFNL series at 130-180 ns) are acceptable for lower-frequency rectification applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed in this reference maintain ROHS3 compliance, consistent with the original MSRF860G specification. This ensures compatibility with environmental regulations and procurement requirements for RoHS-compliant applications.

Q: What is the significance of "Active" versus "Obsolete" product status?

A: Active status indicates the part is currently manufactured and available from the supplier, ensuring long-term supply chain reliability. Obsolete status indicates the part is no longer in production, which may result in limited inventory, higher costs, or eventual unavailability. Substituting MSRF860G (obsolete) with an active-status part such as FESF8JT-E3/45 or BYV29FX-600,127 mitigates supply chain risk.

Q: Can DHG5I600PM or RFNL5TJ6SGC9 (5 A parts) be used as substitutes?

A: DHG5I600PM and RFNL5TJ6SGC9 are not recommended as direct substitutes due to insufficient current rating (5 A vs. 8 A required). These parts are suitable only if circuit analysis confirms that actual operating current is below 5 A, which would contradict the original MSRF860G specification. Use higher-rated substitutes to maintain design margin and reliability.

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