MSR860G Equivalent & Substitute Parts

Part Overview

The MSR860G is a general-purpose rectifier diode manufactured by onsemi, rated for 600 V DC reverse voltage and 8 A average rectified current in a through-hole TO-220-2 package. This component is classified as obsolete, indicating that onsemi has discontinued production. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this rectifier diode.

Substiute Parts

MSR860G
onsemiIn Stock: 942MSR860G Datasheet
MSR860G
Current Part
BYC8-600P,127
WeEn SemiconductorsIn Stock: 4481BYC8-600P,127 Datasheet
BYC8-600P,127
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DSEI25-06A
IXYSIn Stock: 3299DSEI25-06A Datasheet
DSEI25-06A
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HERA806G
Taiwan Semiconductor CorporationIn Stock: 2168HERA806G Datasheet
HERA806G
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LQA03TC600
Power IntegrationsIn Stock: 17013LQA03TC600 Datasheet
LQA03TC600
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LXA06T600
Power IntegrationsIn Stock: 8165LXA06T600 Datasheet
LXA06T600
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MUR860-BP
Micro Commercial CoIn Stock: 26854MUR860-BP Datasheet
MUR860-BP
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QH03TZ600
Power IntegrationsIn Stock: 2188QH03TZ600 Datasheet
QH03TZ600
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STTH806D
STMicroelectronicsIn Stock: 1431STTH806D Datasheet
STTH806D
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STTH8L06D
STMicroelectronicsIn Stock: 1431STTH8L06D Datasheet
STTH8L06D
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VS-HFA08TB60-M3
Vishay General Semiconductor - Diodes DivisionIn Stock: 9767VS-HFA08TB60-M3 Datasheet
VS-HFA08TB60-M3
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 8 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 120 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Mounting Type Through Hole
Package / Case TO-220-2
Operating Temperature - Junction -65 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the MSR860G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): Must equal 600 V
  • Current - Average Rectified (Io): Must equal or exceed 8 A
  • Mounting Type: Must be Through Hole
  • Package / Case: Must be TO-220-2 or compatible TO-220AC variant
  • Speed Classification: Must be Fast Recovery ≤ 500ns, > 200mA (Io)
  • Technology: Must be Standard

Secondary Compatibility Factors:

  • Reverse Recovery Time (trr): Lower values indicate improved performance characteristics
  • Voltage - Forward (Vf): Variations within typical operating ranges are acceptable
  • Current - Reverse Leakage: Lower values indicate superior reverse blocking characteristics
  • Operating Temperature Range: Must support the application's thermal requirements
  • Compliance: RoHS3 compliance required for regulatory alignment

Parts are grouped into two categories:

Direct Equivalents (8 A @ 600 V): Parts with identical current and voltage ratings, suitable for direct replacement with minimal circuit impact.

Higher Current Alternatives (≥ 8 A @ 600 V): Parts rated for currents exceeding 8 A at 600 V, providing design margin and thermal headroom while maintaining voltage compatibility.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) [V] trr [ns] Ir @ Vr [µA] Package Status
MSR860G onsemi 600 8 1.7 @ 8A 120 10 @ 600V TO-220-2 Obsolete
BYC8-600P,127 WeEn Semiconductors 600 8 1.9 @ 8A 18 20 @ 600V TO-220-2 Active
HERA806G Taiwan Semiconductor Corporation 600 8 1.7 @ 8A 80 10 @ 600V TO-220-2 Active
MUR860-BP Micro Commercial Co 600 8 1.5 @ 8A 50 5 @ 600V TO-220-2 Active
STTH806D STMicroelectronics 600 8 1.85 @ 8A 55 8 @ 600V TO-220-2 Obsolete
STTH8L06D STMicroelectronics 600 8 1.3 @ 8A 105 8 @ 600V TO-220-2 Active
VS-HFA08TB60-M3 Vishay General Semiconductor - Diodes Division 600 8 2.1 @ 16A 55 5 @ 600V TO-220-2 Active
LXA06T600 Power Integrations 600 6 2.94 @ 6A 23 250 @ 600V TO-220-2 Active
QH03TZ600 Power Integrations 600 3 3 @ 3A 9.8 250 @ 600V TO-220-2 Active
DSEI25-06A IXYS 600 25 1.31 @ 25A 50 100 @ 600V TO-220-2 Active
LQA03TC600 Power Integrations 600 3 3.1 @ 3A 13 20 @ 600V TO-220-2 Active

Engineering Selection Recommendations

Direct Replacement Candidates (8 A @ 600 V Rating):

The following parts are recommended as direct replacements for the MSR860G based on matching current and voltage specifications with active product status:

  • HERA806G (Taiwan Semiconductor Corporation): Active status, identical voltage and current ratings, matching forward voltage at rated current (1.7 V @ 8 A), and operating temperature range (-55°C to 150°C). RoHS3 compliant.

  • MUR860-BP (Micro Commercial Co): Active status, identical voltage and current ratings, superior forward voltage performance (1.5 V @ 8 A), and operating temperature range (-55°C to 150°C). REACH compliant.

  • STTH8L06D (STMicroelectronics): Active status, identical voltage and current ratings, superior forward voltage (1.3 V @ 8 A), and extended maximum junction temperature (175°C). RoHS3 compliant.

  • VS-HFA08TB60-M3 (Vishay General Semiconductor - Diodes Division): Active status, identical voltage and current ratings, HEXFRED® series technology, and operating temperature range (-55°C to 150°C). RoHS3 compliant.

  • BYC8-600P,127 (WeEn Semiconductors): Active status, identical voltage and current ratings, and extended maximum junction temperature (175°C). RoHS3 compliant.

Higher Current Alternatives (≥ 8 A @ 600 V Rating):

  • DSEI25-06A (IXYS): Active status, 25 A current rating provides significant design margin, identical voltage rating, and operating temperature range (-40°C to 150°C). RoHS3 compliant. Suitable for applications requiring thermal headroom or future current scaling.

Not Recommended for Direct Replacement:

  • LXA06T600 (Power Integrations): 6 A rating is below the 8 A requirement and does not meet minimum current specifications.

  • QH03TZ600 (Power Integrations): 3 A rating is below the 8 A requirement and does not meet minimum current specifications.

  • LQA03TC600 (Power Integrations): 3 A rating is below the 8 A requirement and does not meet minimum current specifications.

  • STTH806D (STMicroelectronics): Obsolete status limits long-term supply availability.

Frequently Asked Questions (FAQ)

Q: Can I use a lower current rated diode as a substitute for the MSR860G?

A: No. The MSR860G is rated for 8 A average rectified current. Substitutes must equal or exceed this rating. Using a lower current rated device (such as the 3 A or 6 A alternatives listed) will result in thermal stress, reduced reliability, and potential component failure.

Q: What is the difference between TO-220-2 and TO-220AC package designations?

A: Both designations refer to the same physical through-hole package form factor with two leads. The package compatibility is mechanical and electrical. All listed substitute parts use the TO-220-2 package or the equivalent TO-220AC supplier designation and are physically interchangeable.

Q: Why do some substitute parts have lower reverse recovery times (trr)?

A: Reverse recovery time indicates how quickly the diode transitions from conducting to blocking state. Lower trr values (such as 18 ns for BYC8-600P,127 versus 120 ns for MSR860G) represent improved switching characteristics and reduced switching losses. This is a performance enhancement, not a compatibility issue.

Q: Are all listed substitutes RoHS3 compliant?

A: Most listed substitutes are RoHS3 compliant. LXA06T600, QH03TZ600, and LQA03TC600 are listed as RoHS Compliant (not specifically ROHS3). Verify compliance requirements for your specific application and regulatory jurisdiction before final selection.

Q: Can I use the DSEI25-06A (25 A) instead of the MSR860G (8 A)?

A: Yes. The DSEI25-06A meets all electrical requirements (600 V, ≥ 8 A) and is physically compatible. The higher current rating provides design margin and thermal headroom. However, verify that your circuit design accommodates the different forward voltage characteristics (1.31 V @ 25 A versus 1.7 V @ 8 A) and reverse leakage current (100 µA versus 10 µA).

Q: What is the significance of forward voltage (Vf) differences between substitutes?

A: Forward voltage affects power dissipation and heat generation during conduction. Lower Vf values (such as 1.3 V for STTH8L06D) result in reduced power loss and lower junction temperatures. Higher Vf values (such as 1.9 V for BYC8-600P,127) result in increased power dissipation. Select based on your thermal design requirements and power budget.

Q: Should I prioritize active status over other parameters when selecting a substitute?

A: Yes. Active product status ensures long-term supply availability, ongoing manufacturer support, and access to current production batches. The obsolete STTH806D should be avoided unless existing inventory is specifically required for legacy system maintenance.

Q: Are there any thermal considerations when substituting the MSR860G?

A: Yes. Operating temperature range and maximum junction temperature vary among substitutes. The MSR860G operates to 150°C maximum junction temperature. STTH8L06D, BYC8-600P,127, and VS-HFA08TB60-M3 support 175°C maximum junction temperature, providing additional thermal margin. Verify your application's thermal environment and heat dissipation design.

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