MSD1328-RT1G Equivalent & Substitute Parts

Part Overview

The MSD1328-RT1G is an NPN bipolar junction transistor manufactured by onsemi, rated for 20 V collector-emitter breakdown voltage and 500 mA maximum collector current in a surface mount SC-59 (SOT-23-3) package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The 200 mW power rating and specified electrical characteristics define the functional envelope for compatible alternatives.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	20	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	200	mW
Vce Saturation (Max) @ Ib, Ic	400 mV @ 20 mA, 500 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500 mA, 2 V	—
Current - Collector Cutoff (Max)	100	nA
Operating Temperature (Max)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MSD1328-RT1G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (mandatory match)
Voltage - Collector Emitter Breakdown (Max): 20 V minimum (equal or higher acceptable)
Current - Collector (Ic) (Max): 500 mA minimum (equal or higher acceptable)
Power - Max: 200 mW minimum (equal or higher acceptable)
Vce Saturation (Max) @ Ib, Ic: Must meet or exceed performance at specified bias conditions
DC Current Gain (hFE) (Min): Must meet or exceed 200 @ 500 mA, 2 V
Package / Case: TO-236-3, SC-59, SOT-23-3 compatible (surface mount)
Mounting Type: Surface Mount (mandatory match)

Substitution Categories:

Direct Substitutes meet all primary criteria with identical or superior electrical performance at the specified operating point:

MSD602-RT1G (onsemi): Higher voltage rating (50 V), same current and power ratings
2SD2114KT146W (Rohm Semiconductor): Identical electrical specifications with higher transition frequency (350 MHz)
2SD2114KT146V (Rohm Semiconductor): Identical electrical specifications with higher transition frequency (350 MHz)

Similar Substitutes exceed the primary current or power requirements while maintaining voltage and package compatibility:

NSS20201LT1G (onsemi): 2 A collector current, 460 mW power, 150 MHz transition frequency
NSV20201LT1G (onsemi): 2 A collector current, 460 mW power, 150 MHz transition frequency
DSS20201L-7 (Diodes Incorporated): 2 A collector current, 600 mW power, 150 MHz transition frequency
FMMT618TA (Diodes Incorporated): 2.5 A collector current, 625 mW power, 140 MHz transition frequency

Functional Alternatives maintain voltage and package compatibility with reduced current or power ratings:

MMS8050-H-TP (Micro Commercial Co): 25 V voltage rating, 500 mA current, 300 mW power, 150 MHz transition frequency
MMS8050-L-TP (Micro Commercial Co): 25 V voltage rating, 500 mA current, 300 mW power, 150 MHz transition frequency

Parameter Comparison

Part Number	Manufacturer	Vce Breakdown (V)	Ic Max (mA)	Power Max (mW)	Vce Sat @ Ib, Ic (mV)	hFE Min @ Ic, Vce	Frequency (MHz)	Package	Status
MSD1328-RT1G	onsemi	20	500	200	400 @ 20 mA, 500 mA	200 @ 500 mA, 2 V	—	SC-59	Obsolete
MSD602-RT1G	onsemi	50	500	200	600 @ 30 mA, 300 mA	120 @ 150 mA, 10 V	—	SC-59	Active
2SD2114KT146W	Rohm Semiconductor	20	500	200	400 @ 20 mA, 500 mA	1200 @ 10 mA, 3 V	350	SMT3	Active
2SD2114KT146V	Rohm Semiconductor	20	500	200	400 @ 20 mA, 500 mA	820 @ 10 mA, 3 V	350	SMT3	Active
NSS20201LT1G	onsemi	20	2000	460	100 @ 200 mA, 2 A	200 @ 500 mA, 2 V	150	SOT-23-3	Active
NSV20201LT1G	onsemi	20	2000	460	100 @ 200 mA, 2 A	200 @ 500 mA, 2 V	150	SOT-23-3	Active
DSS20201L-7	Diodes Incorporated	20	2000	600	100 @ 200 mA, 2 A	200 @ 500 mA, 2 V	150	SOT-23-3	Active
FMMT618TA	Diodes Incorporated	20	2500	625	200 @ 50 mA, 2.5 A	200 @ 2 A, 2 V	140	SOT-23-3	Active
MMS8050-H-TP	Micro Commercial Co	25	500	300	600 @ 50 mA, 500 mA	120 @ 50 mA, 1 V	150	SOT-23	Active
MMS8050-L-TP	Micro Commercial Co	25	500	300	600 @ 50 mA, 500 mA	120 @ 50 mA, 1 V	150	SOT-23	Active

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

The 2SD2114KT146W and 2SD2114KT146V from Rohm Semiconductor are the closest functional equivalents, matching the MSD1328-RT1G in voltage rating (20 V), collector current (500 mA), power dissipation (200 mW), and saturation voltage characteristics. Both devices are RoHS3 compliant and carry active product status. The 2SD2114KT146W variant is recommended as the primary choice due to higher inventory availability (234,300 pcs) and superior DC current gain specification (1200 @ 10 mA, 3 V). The transition frequency of 350 MHz exceeds the original specification, providing enhanced high-frequency performance.

For Higher Current Applications:

NSS20201LT1G, NSV20201LT1G, DSS20201L-7, and FMMT618TA are suitable when circuit design permits operation at collector currents exceeding 500 mA. These devices maintain the 20 V voltage rating and provide significantly higher current capacity (2 A to 2.5 A) with improved power handling (460 mW to 625 mW). All are RoHS3 compliant and active products. DSS20201L-7 offers the highest power rating (600 mW) among the 2 A options. FMMT618TA provides the highest current capacity (2.5 A) with the largest inventory (54,762 pcs).

For Voltage-Tolerant Applications:

MSD602-RT1G (onsemi) and MMS8050-H-TP / MMS8050-L-TP (Micro Commercial Co) are acceptable when circuit design accommodates higher voltage ratings (50 V and 25 V respectively). MSD602-RT1G maintains identical current and power specifications with enhanced voltage margin. MMS8050 variants provide increased power dissipation (300 mW) and transition frequency (150 MHz) with the same current rating.

Compliance and Availability:

All recommended substitutes carry RoHS3 compliance and REACH Unaffected status, matching the original part's regulatory profile. Moisture Sensitivity Level 1 (Unlimited) is maintained across all alternatives. Inventory availability is highest for 2SD2114KT146W (234,300 pcs), MMS8050-H-TP (100,300 pcs), and FMMT618TA (54,762 pcs).

Frequently Asked Questions (FAQ)

Q: Can MSD602-RT1G be used as a direct replacement for MSD1328-RT1G?

A: MSD602-RT1G is electrically compatible for applications where the 20 V voltage rating of the original part is not exceeded. The MSD602-RT1G has a 50 V breakdown voltage rating, which is higher than required. However, the saturation voltage specification differs (600 mV @ 30 mA, 300 mA versus 400 mV @ 20 mA, 500 mA), and the DC current gain is lower (120 @ 150 mA, 10 V versus 200 @ 500 mA, 2 V). Substitution is valid only if circuit bias conditions and gain requirements are compatible with these differences.

Q: What is the difference between NSS20201LT1G and NSV20201LT1G?

A: NSS20201LT1G and NSV20201LT1G are functionally identical. Both are manufactured by onsemi, rated for 20 V, 2 A, with 150 MHz transition frequency and 460 mW power dissipation. The primary difference is inventory availability: NSS20201LT1G has 18,180 pcs in stock, while NSV20201LT1G has 13,063 pcs. Selection between these parts should be based on procurement lead time and supply chain requirements.

Q: Are the 2SD2114KT146W and 2SD2114KT146V interchangeable?

A: Both devices are manufactured by Rohm Semiconductor with identical voltage (20 V), current (500 mA), power (200 mW), and saturation voltage specifications. The DC current gain differs: 2SD2114KT146W specifies 1200 @ 10 mA, 3 V, while 2SD2114KT146V specifies 820 @ 10 mA, 3 V. For applications requiring higher gain, 2SD2114KT146W is preferred. Both are RoHS3 compliant and active products.

Q: Can higher-current devices like FMMT618TA replace MSD1328-RT1G in all applications?

A: FMMT618TA (2.5 A, 625 mW) maintains the 20 V voltage rating and exceeds the current and power requirements of MSD1328-RT1G (500 mA, 200 mW). Substitution is valid from an electrical capability standpoint. However, circuit design must account for the different saturation voltage specification (200 mV @ 50 mA, 2.5 A versus 400 mV @ 20 mA, 500 mA). The higher current capacity does not introduce incompatibility if the circuit operates within the original bias conditions.

Q: What packaging considerations apply to these substitutes?

A: MSD1328-RT1G is specified in SC-59 (SOT-23-3) package. Direct substitutes 2SD2114KT146W and 2SD2114KT146V use SMT3 package designation, which is mechanically and electrically compatible with SC-59 / SOT-23-3. NSS20201LT1G, NSV20201LT1G, DSS20201L-7, and FMMT618TA use SOT-23-3 (TO-236) package designation, which is identical to SC-59. MMS8050-H-TP and MMS8050-L-TP use SOT-23 package, which is mechanically similar but may require PCB layout verification. All devices are surface mount with three-terminal configurations compatible with the original footprint.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts carry RoHS3 Compliant status. The original MSD1328-RT1G does not specify RoHS status (listed as REACH Unaffected only), but all active alternatives meet current RoHS3 requirements, ensuring compliance with modern procurement and environmental regulations.

Q: Which substitute offers the best inventory availability?

A: 2SD2114KT146W (Rohm Semiconductor) has the highest inventory at 234,300 pcs. MMS8050-H-TP (Micro Commercial Co) is second with 100,300 pcs. FMMT618TA (Diodes Incorporated) is third with 54,762 pcs. For applications requiring immediate availability, 2SD2114KT146W is the recommended choice.

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