MSC2295-CT1G Equivalent & Substitute Parts

Part Overview

The MSC2295-CT1G is an RF transistor NPN manufactured by onsemi, rated for 20V collector-emitter breakdown voltage with a transition frequency of 150MHz and maximum power dissipation of 200mW. This surface mount device in SC-59 (SOT-23-3) package is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	MSC2295-CT1G	—
Manufacturer	onsemi	—
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	20	V
Frequency - Transition	150	MHz
Power - Max	200	mW
Current - Collector (Ic) (Max)	30	mA
DC Current Gain (hFE) (Min)	110 @ 1mA, 10V	—
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Product Status	Obsolete	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
REACH Status	REACH Unaffected	—

Substitute Part Grouping Explanation

Substitution of the MSC2295-CT1G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN configuration
Voltage Rating: Collector-emitter breakdown voltage must equal or exceed 20V
Frequency Performance: Transition frequency must support 150MHz operation
Power Dissipation: Maximum power rating must accommodate 200mW
Current Handling: Maximum collector current must support 30mA
DC Current Gain: hFE characteristics must be compatible with circuit design
Package Compatibility: Surface mount SOT-23-3 or equivalent footprint
Operating Temperature: Junction temperature rating of 150°C or higher
Compliance: REACH and RoHS status for regulatory requirements

The substitute parts listed below are grouped based on their ability to meet these criteria within the constraints of their respective electrical specifications and package configurations.

Parameter Comparison

Parameter	MSC2295-CT1G (Main)	BF771E6327HTSA1	2SC2714-Y(TE85L,F)	BFP740H6327XTSA1	MRF454
Manufacturer	onsemi	Infineon Technologies	Toshiba Semiconductor and Storage	Infineon Technologies	MACOM Technology Solutions
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	20V	12V	30V	4.7V	18V
Frequency - Transition	150MHz	8GHz	550MHz	42GHz	—
Power - Max	200mW	580mW	100mW	160mW	80W
Current - Collector (Ic) (Max)	30mA	80mA	20mA	30mA	20A
DC Current Gain (hFE) (Min)	110 @ 1mA, 10V	70 @ 30mA, 8V	100 @ 1mA, 6V	160 @ 25mA, 3V	40 @ 5A, 5V
Operating Temperature (TJ)	150°C	150°C	125°C	150°C	—
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Chassis Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	SC-82A, SOT-343	211-11, Style 2
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

BF771E6327HTSA1 (Infineon Technologies)

This part is an active product with ROHS3 compliance and REACH unaffected status. It shares the same SOT-23-3 package footprint as the MSC2295-CT1G, enabling direct mechanical substitution. The BF771E6327HTSA1 operates at 150°C junction temperature, matching the thermal rating of the original part. However, the collector-emitter breakdown voltage is rated at 12V, which is lower than the 20V specification of the MSC2295-CT1G. This part is suitable for applications where the circuit voltage does not exceed 12V. The higher maximum power rating (580mW) and collector current capability (80mA) provide design margin for higher-power applications.

2SC2714-Y(TE85L,F) (Toshiba Semiconductor and Storage)

This part is an active product with ROHS3 compliance and REACH unaffected status. It maintains the same SOT-23-3 package configuration as the MSC2295-CT1G. The 2SC2714-Y(TE85L,F) exceeds the voltage specification with a 30V collector-emitter breakdown rating, providing margin for higher-voltage applications. The transition frequency of 550MHz exceeds the 150MHz requirement. However, the maximum power dissipation is rated at 100mW, which is lower than the 200mW specification of the original part. The operating temperature is limited to 125°C, which is 25°C below the MSC2295-CT1G rating. This part is suitable for applications where power dissipation does not exceed 100mW and operating temperature remains below 125°C.

BFP740H6327XTSA1 (Infineon Technologies)

This part is an active product with ROHS3 compliance and REACH unaffected status. It operates at 150°C junction temperature, matching the thermal rating of the MSC2295-CT1G. The BFP740H6327XTSA1 features a 42GHz transition frequency, significantly exceeding the 150MHz requirement. However, the collector-emitter breakdown voltage is rated at only 4.7V, which is substantially lower than the 20V specification of the MSC2295-CT1G. The package is SOT-343, which differs from the SOT-23-3 footprint of the original part, requiring circuit board layout modification. This part is suitable only for low-voltage RF applications where the circuit voltage does not exceed 4.7V.

MRF454 (MACOM Technology Solutions)

This part is an active product with ROHS3 compliance. The MRF454 is a chassis mount device with significantly different electrical characteristics, including a 20A maximum collector current and 80W power dissipation capability. The collector-emitter breakdown voltage is 18V, which is close to the 20V specification of the MSC2295-CT1G. However, the package configuration is 211-11 Style 2, which is a chassis mount package fundamentally different from the surface mount SOT-23-3 footprint of the MSC2295-CT1G. This part is not suitable for direct substitution in surface mount applications and is intended for high-power RF applications requiring chassis mounting.

Frequently Asked Questions (FAQ)

Q: Can the BF771E6327HTSA1 be used as a direct replacement for the MSC2295-CT1G?

A: The BF771E6327HTSA1 shares the same SOT-23-3 package footprint and can be mounted in the same circuit board location. However, the 12V collector-emitter breakdown voltage is lower than the 20V rating of the MSC2295-CT1G. This part is suitable only if the circuit operates at voltages not exceeding 12V. Circuit validation is required to confirm voltage compatibility.

Q: What are the voltage limitations when substituting the MSC2295-CT1G?

A: The MSC2295-CT1G is rated for 20V collector-emitter breakdown voltage. The BF771E6327HTSA1 is limited to 12V, the BFP740H6327XTSA1 to 4.7V, and the 2SC2714-Y(TE85L,F) supports 30V. Selection must ensure the substitute part voltage rating meets or exceeds the circuit operating voltage.

Q: Is the 2SC2714-Y(TE85L,F) suitable for high-temperature applications?

A: The 2SC2714-Y(TE85L,F) has a maximum junction temperature rating of 125°C, which is 25°C lower than the MSC2295-CT1G rating of 150°C. This part is not suitable for applications requiring operation above 125°C junction temperature.

Q: Can the BFP740H6327XTSA1 be used in place of the MSC2295-CT1G?

A: The BFP740H6327XTSA1 has a different package (SOT-343 versus SOT-23-3) and a significantly lower voltage rating (4.7V versus 20V). This part is not suitable for direct substitution and requires circuit board redesign. It is intended for low-voltage, high-frequency RF applications only.

Q: Why is the MRF454 listed as a substitute if it has a different package?

A: The MRF454 is listed based on the provided substitute list but is not suitable for direct substitution due to its chassis mount package configuration. It is intended for high-power RF applications with different mechanical and thermal requirements than the surface mount MSC2295-CT1G.

Q: What compliance certifications should I verify when selecting a substitute?

A: All listed substitute parts are REACH unaffected and ROHS3 compliant, meeting current regulatory requirements. The MSC2295-CT1G has REACH unaffected status. Verify that the selected substitute meets the specific compliance requirements of your application and target market.

Q: Are there frequency limitations when substituting the MSC2295-CT1G?

A: The MSC2295-CT1G is rated for 150MHz transition frequency. The BF771E6327HTSA1 (8GHz), 2SC2714-Y(TE85L,F) (550MHz), and BFP740H6327XTSA1 (42GHz) all exceed this frequency requirement. The MRF454 does not specify transition frequency. All parts support the 150MHz requirement or higher.

Q: What is the impact of power dissipation differences on substitution?

A: The MSC2295-CT1G is rated for 200mW maximum power dissipation. The BF771E6327HTSA1 (580mW) and BFP740H6327XTSA1 (160mW) have different ratings. The 2SC2714-Y(TE85L,F) is limited to 100mW. Selection must ensure the substitute part power rating accommodates the circuit's actual power dissipation requirements.

Q: Can I use the BF771E6327HTSA1 in a 20V circuit?

A: No. The BF771E6327HTSA1 has a maximum collector-emitter breakdown voltage of 12V. Using it in a 20V circuit exceeds its voltage rating and will result in device failure. The circuit voltage must not exceed 12V for this part.

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