Equivalent & Substitute Parts for MSB92ASWT1G

Part Overview

The MSB92ASWT1G is an active production PNP bipolar junction transistor manufactured by onsemi, rated for 300 V collector-emitter breakdown voltage and 500 mA maximum collector current. The device is packaged in SC-70 (SOT-323) surface mount configuration with 150 mW power dissipation capability and 50 MHz transition frequency. This part is ROHS3 compliant and carries MSL Level 1 moisture sensitivity rating. Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity for applications requiring PNP transistor functionality within the specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	300	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	150	mW
Frequency - Transition	50	MHz
Package / Case	SC-70, SOT-323	—
Mounting Type	Surface Mount	—
Operating Temperature (Max)	150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the MSB92ASWT1G are classified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Critical Parameters for Substitution:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 300 V minimum
Current - Collector (Ic) (Max): 500 mA or greater
Package / Case: SC-70 or SOT-323 surface mount
Mounting Type: Surface Mount
Frequency - Transition: 50 MHz or greater
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: MSL 1

Substitute Categories:

Direct Parametric Equivalents: Parts meeting all critical parameters with identical or superior electrical specifications.

Functional Equivalents: Parts meeting all critical parameters with minor variations in secondary specifications (DC Current Gain, Power dissipation) that do not affect circuit functionality within the application envelope.

Restricted Substitutes: Parts meeting most critical parameters but with reduced maximum collector current or power dissipation, suitable only for applications with lower current or power requirements.

Parameter Comparison

Parameter	MSB92ASWT1G	MSB92WT1G	MSB92AWT1G	MMSTA92-7-F
Manufacturer	onsemi	onsemi	onsemi	Diodes Incorporated
Transistor Type	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	300 V	300 V	300 V	300 V
Current - Collector (Ic) (Max)	500 mA	500 mA	500 mA	100 mA
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 20mA	500mV @ 2mA, 20mA	500mV @ 2mA, 20mA	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)	250nA (ICBO)	250nA (ICBO)	250nA (ICBO)	250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 10V	25 @ 1mA, 10V	120 @ 1mA, 10V	25 @ 30mA, 10V
Power - Max	150 mW	150 mW	150 mW	200 mW
Frequency - Transition	50 MHz	50 MHz	50 MHz	50 MHz
Operating Temperature (Max)	150°C	150°C	150°C	150°C
Package / Case	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

MSB92AWT1G (onsemi): Direct parametric equivalent to MSB92ASWT1G. Identical electrical specifications including 500 mA maximum collector current, 300 V breakdown voltage, 120 minimum DC current gain at 1 mA/10V, and 150 mW power dissipation. Both parts share SC-70 SOT-323 surface mount packaging, ROHS3 compliance, and MSL Level 1 rating. Selection between MSB92ASWT1G and MSB92AWT1G is based on inventory availability and supply chain considerations, as electrical performance is equivalent.

MSB92WT1G (onsemi): Functional equivalent with reduced DC current gain specification (25 minimum at 1 mA/10V versus 120 for the main part). All other critical parameters match: 500 mA collector current, 300 V breakdown voltage, SC-70 SOT-323 package, 50 MHz transition frequency, ROHS3 compliance, and MSL Level 1. This part is suitable for applications where lower current gain is acceptable or where base drive current is not a limiting factor.

MMSTA92-7-F (Diodes Incorporated): Restricted substitute with reduced maximum collector current specification (100 mA versus 500 mA). Maintains 300 V breakdown voltage, SC-70 SOT-323 package, 50 MHz transition frequency, ROHS3 compliance, and MSL Level 1 rating. Power dissipation is increased to 200 mW. This part is suitable only for low-current applications where collector current does not exceed 100 mA. Operating temperature range extends to −55°C minimum, providing wider temperature coverage than the main part.

All substitute parts carry active product status and ROHS3 compliance, supporting long-term design continuity and regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can MSB92WT1G be used as a direct replacement for MSB92ASWT1G?

A: MSB92WT1G is a functional equivalent with identical maximum collector current (500 mA), breakdown voltage (300 V), package (SC-70 SOT-323), and frequency response (50 MHz). The primary difference is DC current gain specification: MSB92WT1G specifies 25 minimum at 1 mA/10V, while MSB92ASWT1G specifies 120 minimum. Selection depends on circuit base drive requirements. If the design relies on higher current gain for biasing, MSB92ASWT1G or MSB92AWT1G are preferred.

Q: What are the limitations of MMSTA92-7-F as a substitute?

A: MMSTA92-7-F is limited to 100 mA maximum collector current, compared to 500 mA for MSB92ASWT1G. This part is suitable only for applications where collector current remains below 100 mA. All other critical parameters—300 V breakdown voltage, SC-70 SOT-323 package, 50 MHz transition frequency, ROHS3 compliance, and MSL Level 1—are met. MMSTA92-7-F offers extended operating temperature range (−55°C to 150°C) and higher power dissipation (200 mW).

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts use SC-70 or SOT-323 surface mount packaging, which share identical PCB footprints and land patterns. No layout modifications are required when substituting between MSB92ASWT1G, MSB92WT1G, MSB92AWT1G, and MMSTA92-7-F.

Q: What compliance certifications apply to all substitute parts?

A: All parts listed—MSB92ASWT1G, MSB92WT1G, MSB92AWT1G, and MMSTA92-7-F—are ROHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating. REACH status is unaffected for all parts. ECCN classification is EAR99 for all parts.

Q: Can MSB92AWT1G replace MSB92ASWT1G without circuit redesign?

A: Yes. MSB92AWT1G is a direct parametric equivalent with identical specifications: 500 mA collector current, 300 V breakdown voltage, 120 minimum DC current gain at 1 mA/10V, 150 mW power dissipation, SC-70 SOT-323 package, and 50 MHz transition frequency. No circuit redesign or testing is required.

Q: What is the primary substitution criterion for PNP transistors in this category?

A: The primary substitution criteria are: (1) PNP transistor type, (2) minimum 300 V collector-emitter breakdown voltage, (3) maximum collector current rating equal to or greater than the application requirement, (4) SC-70 or SOT-323 surface mount package, (5) 50 MHz or greater transition frequency, and (6) ROHS3 compliance with MSL Level 1 rating. Secondary parameters such as DC current gain and power dissipation must be verified against specific circuit requirements.

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