MSB92AS1WT1G Equivalent & Substitute Parts

Part Overview

The MSB92AS1WT1G is a Surface Mount PNP Bipolar Junction Transistor (BJT) manufactured by onsemi, housed in an SC-70 (SOT-323) package. This component is rated for 300 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 150 mW power dissipation. The device operates at a transition frequency of 50 MHz with a minimum DC current gain of 120 at 1 mA collector current and 10 V collector-emitter voltage.

The MSB92AS1WT1G is classified as an obsolete product. Locating direct replacements from current production inventory is necessary for new designs and ongoing production requirements. Active equivalent parts from onsemi's current product line provide identical electrical and mechanical specifications with improved supply chain availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	300	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	150	mW
Frequency - Transition	50	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 10V	—
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 20mA	—
Current - Collector Cutoff (Max)	250	nA
Operating Temperature (Max)	150	°C
Package / Case	SC-70, SOT-323	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MSB92AS1WT1G is determined by equivalence across the following critical parameters:

Electrical Specifications:

Transistor polarity (PNP)
Collector-emitter breakdown voltage (300 V)
Maximum collector current (500 mA)
Maximum power dissipation (150 mW)
Transition frequency (50 MHz)
DC current gain minimum specification (hFE ≥ 120 @ 1 mA, 10 V)
Saturation voltage characteristics (500 mV @ 2 mA, 20 mA)
Collector cutoff current (250 nA maximum)

Mechanical & Environmental Specifications:

Package type (SC-70 / SOT-323)
Surface mount configuration
Operating temperature range (150°C maximum junction temperature)
Moisture sensitivity level (MSL 1)
RoHS3 compliance
REACH unaffected status

Substitute parts are classified into two categories:

Direct Manufacturer Equivalents: Parts from onsemi with identical electrical parameters and active product status (MSB92ASWT1G, MSB92AWT1G). These provide full pin-for-pin and functional compatibility.

Direct Manufacturer Alternatives: Parts from onsemi with minor parameter variations (MSB92WT1G). This part maintains identical voltage and frequency specifications but specifies a lower minimum DC current gain (25 vs. 120 @ 1 mA, 10 V), requiring circuit-level evaluation.

Similar Cross-Manufacturer Part: The MMSTA92-7-F from Diodes Incorporated shares the same package, voltage rating, and frequency specification but operates at a reduced maximum collector current (100 mA vs. 500 mA) and higher maximum power dissipation (200 mW vs. 150 mW). This part is suitable only for applications with collector current requirements not exceeding 100 mA.

Parameter Comparison

Parameter	MSB92AS1WT1G	MSB92ASWT1G	MSB92WT1G	MSB92AWT1G	MMSTA92-7-F
Manufacturer	onsemi	onsemi	onsemi	onsemi	Diodes Incorporated
Product Status	Obsolete	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	300 V	300 V	300 V	300 V	300 V
Current - Collector (Ic) (Max)	500 mA	500 mA	500 mA	500 mA	100 mA
Power - Max	150 mW	150 mW	150 mW	150 mW	200 mW
Frequency - Transition	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 10V	120 @ 1mA, 10V	25 @ 1mA, 10V	120 @ 1mA, 10V	25 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 20mA	500mV @ 2mA, 20mA	500mV @ 2mA, 20mA	500mV @ 2mA, 20mA	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)	250 nA	250 nA	250 nA	250 nA	250 nA
Operating Temperature (Max)	150°C	150°C	150°C	150°C	150°C
Package / Case	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Primary Substitutes (Full Compatibility):

MSB92ASWT1G and MSB92AWT1G are the preferred substitutes for the obsolete MSB92AS1WT1G. Both parts are manufactured by onsemi with active product status, ensuring long-term supply chain availability. These parts maintain identical electrical specifications including the 120 minimum DC current gain specification, 500 mA maximum collector current, and 150 mW power rating. Both are RoHS3 compliant and REACH unaffected. The MSB92ASWT1G is supplied in Tape & Reel packaging with 26,400 units in current inventory. The MSB92AWT1G is also supplied in Tape & Reel packaging with 29,100 units in current inventory. These parts require no circuit modifications and provide direct functional replacement.

Secondary Substitute (Reduced Current Gain):

MSB92WT1G is an active onsemi product suitable for applications where the minimum DC current gain specification of 25 (versus 120 for the primary substitutes) is acceptable. This part maintains the 500 mA collector current rating, 300 V breakdown voltage, and 50 MHz transition frequency. Circuit evaluation is required to confirm that the lower current gain does not impact amplification or switching performance in the target application. This part is supplied in Tape & Reel packaging with 6,057 units in current inventory.

Cross-Manufacturer Alternative (Current-Limited Applications):

MMSTA92-7-F from Diodes Incorporated is suitable only for applications where the maximum collector current requirement does not exceed 100 mA. This part shares the 300 V breakdown voltage, 50 MHz transition frequency, and SOT-323 package with the MSB92AS1WT1G. The MMSTA92-7-F specifies a maximum power dissipation of 200 mW (versus 150 mW for the onsemi parts) and a minimum DC current gain of 25 at 30 mA collector current. This part is RoHS3 compliant and REACH unaffected, with 14,627 units in current inventory. Use of this part is restricted to low-current applications and requires verification that the 100 mA collector current limit is not exceeded during normal operation.

Frequently Asked Questions (FAQ)

Q: Can MSB92ASWT1G be used as a direct replacement for MSB92AS1WT1G?

A: Yes. MSB92ASWT1G is a direct functional equivalent manufactured by onsemi with identical electrical specifications, including 300 V breakdown voltage, 500 mA maximum collector current, 150 mW power dissipation, 50 MHz transition frequency, and 120 minimum DC current gain. Both parts use the SC-70 (SOT-323) surface mount package. No circuit modifications are required.

Q: What is the difference between MSB92ASWT1G and MSB92AWT1G?

A: Both parts are onsemi PNP transistors with identical electrical specifications and active product status. The primary difference is packaging format: MSB92ASWT1G is supplied in Tape & Reel with 26,400 units in inventory, while MSB92AWT1G is supplied in Tape & Reel with 29,100 units in inventory. Electrical performance and pin configuration are identical.

Q: Can MSB92WT1G replace MSB92AS1WT1G in all applications?

A: MSB92WT1G maintains the same voltage rating (300 V), collector current rating (500 mA), power dissipation (150 mW), and transition frequency (50 MHz) as the MSB92AS1WT1G. However, the minimum DC current gain is specified as 25 at 1 mA and 10 V, compared to 120 for the MSB92AS1WT1G. Applications requiring the higher current gain specification must be evaluated to determine if the lower gain is acceptable for the intended circuit function.

Q: Is MMSTA92-7-F a suitable replacement for MSB92AS1WT1G?

A: MMSTA92-7-F from Diodes Incorporated is suitable only for applications where the maximum collector current does not exceed 100 mA. The MSB92AS1WT1G is rated for 500 mA maximum collector current. MMSTA92-7-F shares the 300 V breakdown voltage, 50 MHz transition frequency, and SOT-323 package. Applications requiring collector currents above 100 mA must use MSB92ASWT1G, MSB92AWT1G, or MSB92WT1G.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. MSB92ASWT1G, MSB92WT1G, MSB92AWT1G, and MMSTA92-7-F are all RoHS3 compliant with Moisture Sensitivity Level 1 (unlimited). All parts are REACH unaffected.

Q: What is the difference in packaging between the main part and substitute parts?

A: The MSB92AS1WT1G is supplied in an unspecified packaging format. All substitute parts (MSB92ASWT1G, MSB92WT1G, MSB92AWT1G, and MMSTA92-7-F) are supplied in Tape & Reel (TR) format. All parts use the SC-70 (SOT-323) surface mount package with identical pin configuration and footprint.

Q: Can I use MMSTA92-7-F in a high-current application rated for 500 mA?

A: No. MMSTA92-7-F is rated for a maximum collector current of 100 mA. Using this part in an application requiring 500 mA collector current will result in device failure. For applications requiring 500 mA collector current capability, use MSB92ASWT1G, MSB92AWT1G, or MSB92WT1G.

Q: What is the operating temperature range for these parts?

A: MSB92AS1WT1G, MSB92ASWT1G, MSB92WT1G, and MSB92AWT1G are rated for a maximum junction temperature of 150°C. MMSTA92-7-F specifies an operating temperature range of −55°C to 150°C junction temperature. All parts are suitable for industrial temperature applications up to 150°C.

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