MRF19030LSR5 Equivalent & Substitute Parts

Part Overview

The MRF19030LSR5 is an RF MOSFET LDMOS transistor manufactured by NXP USA Inc., designed for RF applications operating at 1.96 GHz with 30W output power and 13 dB gain. This device features a 26V test voltage rating and 300 mA test current in a NI-400S chassis mount package. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing system support and new design implementations where similar performance characteristics are required.

Substiute Parts

MRF19030LSR5

NXP USA Inc.In Stock: 1230MRF19030LSR5 Datasheet

Current PartRFQ

MW6S004NT1

NXP USA Inc.In Stock: 7652MW6S004NT1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MRF19030LSR5 is determined by alignment of the following critical parameters:

Frequency Alignment: Both the main part and substitute operate at 1.96 GHz, ensuring compatibility within the same RF band.

Technology Class: Both devices utilize LDMOS technology, maintaining consistent device physics and performance characteristics.

Voltage Ratings: The substitute part operates at 28V test voltage with a 68V rated voltage, compared to the main part's 26V test and 65V rated voltages. These values remain within compatible operating ranges for RF MOSFET applications.

Gain Characteristics: The substitute provides 18 dB gain versus the main part's 13 dB gain, representing enhanced amplification capability.

Power Output: The substitute delivers 4W output power compared to the main part's 30W. This represents a significant reduction in power handling capacity and indicates the substitute is suitable only for lower-power applications.

Current Rating: The substitute operates at 50 mA test current versus the main part's 300 mA, reflecting the lower power classification.

Package and Mounting: The substitute uses a PLD-1.5 surface mount package, differing from the main part's NI-400S chassis mount configuration. This represents a fundamental change in mechanical integration requirements.

Parameter Comparison

Engineering Selection Recommendations

The MW6S004NT1 is designated as the NXP USA Inc. manufacturer-recommended substitute for the obsolete MRF19030LSR5. Both devices share identical frequency operation at 1.96 GHz and employ LDMOS technology, establishing a common RF performance foundation.

The substitute part carries Active product status, ensuring ongoing availability and manufacturing support, whereas the main part is classified as Obsolete. Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements.

Critical design considerations for substitution include the following parameter differences:

The MW6S004NT1 operates at reduced power output (4W versus 30W) and lower test current (50 mA versus 300 mA). These reductions necessitate application-level assessment to confirm compatibility with power budget requirements.

The substitute provides higher gain (18 dB versus 13 dB), which may require circuit-level adjustments to impedance matching and feedback networks.

Package and mounting configuration changes from NI-400S chassis mount to PLD-1.5 surface mount require mechanical redesign of the circuit board layout and thermal management approach.

Voltage ratings show minor increases (28V test, 68V rated versus 26V test, 65V rated), remaining within acceptable operating margins for most RF applications.

MSL rating increases from 1 to 3, requiring adherence to 168-hour moisture exposure limits during storage and handling.

Frequently Asked Questions (FAQ)

Q: Can the MW6S004NT1 directly replace the MRF19030LSR5 in existing designs?

A: Direct replacement is not possible without circuit modification. The substitute operates at significantly lower power output (4W versus 30W) and uses a different package type (surface mount PLD-1.5 versus chassis mount NI-400S). Applications requiring 30W output power cannot use this substitute. Applications requiring lower power may be compatible following PCB redesign and impedance network adjustment.

Q: What are the key frequency compatibility factors?

A: Both devices operate at 1.96 GHz and employ LDMOS technology. Frequency compatibility is established. However, the higher gain of the substitute (18 dB versus 13 dB) requires verification that impedance matching networks and bias circuits accommodate the gain difference.

Q: How do the voltage ratings compare?

A: The substitute operates at 28V test voltage and 68V rated voltage, compared to the main part's 26V test and 65V rated voltages. These differences are minor and remain within typical RF MOSFET operating margins. Circuit bias and supply voltage designs must be verified for compatibility with the slightly higher voltage specifications.

Q: What packaging considerations apply to substitution?

A: The main part uses a NI-400S chassis mount package requiring through-hole or direct mounting to a heat sink. The substitute uses a PLD-1.5 surface mount package requiring PCB-level integration. This represents a fundamental change in mechanical design, thermal management, and circuit board layout. Existing designs cannot accommodate this substitute without complete PCB redesign.

Q: Are there compliance or regulatory differences?

A: Both parts are ROHS3 compliant and REACH unaffected. No regulatory barriers to substitution exist. However, the substitute has an MSL rating of 3 (168 hours), requiring stricter moisture control during storage and handling compared to the main part's MSL rating of 1 (unlimited).

Q: What is the availability status of each part?

A: The MRF19030LSR5 is classified as Obsolete with 1157 pieces in stock. The MW6S004NT1 is classified as Active with 7607 pieces in stock, ensuring long-term availability and manufacturing support for new designs.