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MRF1150MB Equivalent & Substitute Transistor Parts Reference
Part Overview
The MRF1150MB from MACOM Technology Solutions is an NPN RF bipolar junction transistor (BJT) designed for RF amplification applications. It supports up to 150W output in the 906MHz–1215MHz range, with a collector-emitter breakdown voltage of 70V and a collector current rating of 12A. This part is active and supplied in the 332A-03 chassis-mount package. The requirement to identify alternative and substitute models arises due to design standardization, supply chain risk mitigation, inventory availability, or obsolescence of similar devices.
Substiute Parts
Key Parameters
| Manufacturer Part Number | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Mounting Type | Package / Case | Supplier Device Package | RoHS Status | Part Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF1150MB | NPN | 70V | - | 9.8dB | 150W | 10 @ 5A, 5V | 12A | Chassis Mount | 332A-03 | 332A-03 | ROHS3 Compliant | Active |
Substitute Part Grouping Explanation
Substitute parts are determined strictly by evaluating the following technical parameters: transistor type, voltage - collector emitter breakdown (max), power - max, current - collector (Ic) (max), gain, mounting type, package/case, and RoHS compliance. Substitution is limited to parts explicitly listed, or those meeting allowable equivalence within the same product category and packaging constraints. Only parts with comparable or lesser/higher values—where functional replacement is possible—are listed as substitutes.
Key substitution parameters:
- Transistor type (NPN)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
- Current - Collector (Ic) (Max)
- Gain
- Mounting Type
- Package / Case
- RoHS Compliance
- Product Status
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Mounting Type | Package / Case | Supplier Device Package | RoHS Status | Part Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF1150MB | MACOM Technology Solutions | NPN | 70V | - | 9.8dB | 150W | 10 @ 5A, 5V | 12A | Chassis Mount | 332A-03 | 332A-03 | ROHS3 Compliant | Active |
| 2SC5347AE-TD-E | onsemi | NPN | 12V | 4.7GHz | 8dB | 1.3W | 90 @ 50mA, 5V | 150mA | Surface Mount | TO-243AA | PCP | ROHS3 Compliant | Obsolete |
| BF888H6327XTSA1 | Infineon Technologies | NPN | 4V | 47GHz | 27dB | 160mW | 250 @ 25A, 3V | 30mA | Surface Mount | SC-82A, SOT-343 | PG-SOT343-4-2 | ROHS3 Compliant | Active |
| BFP181E7764HTSA1 | Infineon Technologies | NPN | 12V | 8GHz | 17.5dB~21dB | 175mW | 70 @ 70mA, 8V | 20mA | Surface Mount | TO-253-4, TO-253AA | PG-SOT-143-3D | ROHS3 Compliant | Active |
| BFP640ESDH6327XTSA1 | Infineon Technologies | NPN | 4.7V | 46GHz | 7dB~30dB | 200mW | 110 @ 30mA, 3V | 50mA | Surface Mount | SC-82A, SOT-343 | PG-SOT343-4-2 | ROHS3 Compliant | Active |
| BFP740FESDH6327XTSA1 | Infineon Technologies | NPN | 4.7V | 47GHz | 9dB~31dB | 160mW | 160 @ 25mA, 3V | 45mA | Surface Mount | 4-SMD, Flat Leads | 4-TSFP | ROHS3 Compliant | Active |
| BFR193L3E6327XTMA1 | Infineon Technologies | NPN | 12V | 8GHz | 12.5dB~19dB | 580mW | 70 @ 30mA, 8V | 80mA | Surface Mount | SC-101, SOT-883 | PG-TSLP-3-1 | ROHS3 Compliant | Active |
| BFR460L3E6327XTMA1 | Infineon Technologies | NPN | 5.8V | 22GHz | 16dB | 200mW | 90 @ 20mA, 3V | 50mA | Surface Mount | SC-101, SOT-883 | PG-TSLP-3-1 | ROHS3 Compliant | Active |
| SMMBTH10-4LT3G | onsemi | NPN | 25V | 800MHz | - | 225mW | 120 @ 4mA, 10V | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | ROHS3 Compliant | Active |
Engineering Selection Recommendations
All substitute parts listed are RoHS3 compliant and present a similar transistor type (NPN) as the MRF1150MB. Selection must consider product status; only active parts should be chosen for new or ongoing designs. Parts denoted as obsolete should not be selected for new projects. Package type and mounting style must match system-level mechanical constraints and assembly processes.
Frequently Asked Questions (FAQ)
Q1: What technical criteria are used for identifying substitute transistor parts?
A1: Substitutes are strictly selected based on transistor type, voltage rating, power rating, collector current, gain, mounting type, package/case, and RoHS compliance.
Q2: Can surface-mount parts substitute for chassis-mount parts?
A2: Mounting type is a primary equivalence criterion. Only substitute parts matching required mechanical interfaces and package/case constraints can be considered directly equivalent.
Q3: Are all substitute parts operational drop-in replacements?
A3: Substitute status is based on provided parameters only. All other design-specific parameters must be cross-checked per application requirements.
Q4: How does part status affect substitute selection?
A4: Active status is essential for new or ongoing projects. Obsolete parts are included for reference but are not suitable for new designs.
Q5: Are all parts RoHS3 compliant?
A5: All substitutes listed are RoHS3 compliant as explicitly specified in the input data.
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