MRF1150MB Equivalent & Substitute Transistor Parts Reference

Part Overview

The MRF1150MB from MACOM Technology Solutions is an NPN RF bipolar junction transistor (BJT) designed for RF amplification applications. It supports up to 150W output in the 906MHz–1215MHz range, with a collector-emitter breakdown voltage of 70V and a collector current rating of 12A. This part is active and supplied in the 332A-03 chassis-mount package. The requirement to identify alternative and substitute models arises due to design standardization, supply chain risk mitigation, inventory availability, or obsolescence of similar devices.

Substiute Parts

MRF1150MB
MACOM Technology SolutionsIn Stock: 1115MRF1150MB Datasheet
MRF1150MB
Current Part
2SC5347AE-TD-E
onsemiIn Stock: 41392SC5347AE-TD-E Datasheet
2SC5347AE-TD-E
MFR Recommended
BF888H6327XTSA1
Infineon TechnologiesIn Stock: 1011BF888H6327XTSA1 Datasheet
BF888H6327XTSA1
MFR Recommended
BFP181E7764HTSA1
Infineon TechnologiesIn Stock: 90369BFP181E7764HTSA1 Datasheet
BFP181E7764HTSA1
MFR Recommended
BFP640ESDH6327XTSA1
Infineon TechnologiesIn Stock: 1267BFP640ESDH6327XTSA1 Datasheet
BFP640ESDH6327XTSA1
MFR Recommended
BFP740FESDH6327XTSA1
Infineon TechnologiesIn Stock: 6064BFP740FESDH6327XTSA1 Datasheet
BFP740FESDH6327XTSA1
MFR Recommended
BFR193L3E6327XTMA1
Infineon TechnologiesIn Stock: 990BFR193L3E6327XTMA1 Datasheet
BFR193L3E6327XTMA1
MFR Recommended
BFR460L3E6327XTMA1
Infineon TechnologiesIn Stock: 15936BFR460L3E6327XTMA1 Datasheet
BFR460L3E6327XTMA1
MFR Recommended
SMMBTH10-4LT3G
onsemiIn Stock: 1081SMMBTH10-4LT3G Datasheet
SMMBTH10-4LT3G
MFR Recommended

Key Parameters

Manufacturer Part Number Transistor Type Voltage - Collector Emitter Breakdown (Max) Frequency - Transition Gain Power - Max DC Current Gain (hFE) (Min) @ Ic, Vce Current - Collector (Ic) (Max) Mounting Type Package / Case Supplier Device Package RoHS Status Part Status
MRF1150MB NPN 70V - 9.8dB 150W 10 @ 5A, 5V 12A Chassis Mount 332A-03 332A-03 ROHS3 Compliant Active

Substitute Part Grouping Explanation

Substitute parts are determined strictly by evaluating the following technical parameters: transistor type, voltage - collector emitter breakdown (max), power - max, current - collector (Ic) (max), gain, mounting type, package/case, and RoHS compliance. Substitution is limited to parts explicitly listed, or those meeting allowable equivalence within the same product category and packaging constraints. Only parts with comparable or lesser/higher values—where functional replacement is possible—are listed as substitutes.

Key substitution parameters:

  • Transistor type (NPN)
  • Voltage - Collector Emitter Breakdown (Max)
  • Power - Max
  • Current - Collector (Ic) (Max)
  • Gain
  • Mounting Type
  • Package / Case
  • RoHS Compliance
  • Product Status

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Voltage - Collector Emitter Breakdown (Max) Frequency - Transition Gain Power - Max DC Current Gain (hFE) (Min) @ Ic, Vce Current - Collector (Ic) (Max) Mounting Type Package / Case Supplier Device Package RoHS Status Part Status
MRF1150MB MACOM Technology Solutions NPN 70V - 9.8dB 150W 10 @ 5A, 5V 12A Chassis Mount 332A-03 332A-03 ROHS3 Compliant Active
2SC5347AE-TD-E onsemi NPN 12V 4.7GHz 8dB 1.3W 90 @ 50mA, 5V 150mA Surface Mount TO-243AA PCP ROHS3 Compliant Obsolete
BF888H6327XTSA1 Infineon Technologies NPN 4V 47GHz 27dB 160mW 250 @ 25A, 3V 30mA Surface Mount SC-82A, SOT-343 PG-SOT343-4-2 ROHS3 Compliant Active
BFP181E7764HTSA1 Infineon Technologies NPN 12V 8GHz 17.5dB~21dB 175mW 70 @ 70mA, 8V 20mA Surface Mount TO-253-4, TO-253AA PG-SOT-143-3D ROHS3 Compliant Active
BFP640ESDH6327XTSA1 Infineon Technologies NPN 4.7V 46GHz 7dB~30dB 200mW 110 @ 30mA, 3V 50mA Surface Mount SC-82A, SOT-343 PG-SOT343-4-2 ROHS3 Compliant Active
BFP740FESDH6327XTSA1 Infineon Technologies NPN 4.7V 47GHz 9dB~31dB 160mW 160 @ 25mA, 3V 45mA Surface Mount 4-SMD, Flat Leads 4-TSFP ROHS3 Compliant Active
BFR193L3E6327XTMA1 Infineon Technologies NPN 12V 8GHz 12.5dB~19dB 580mW 70 @ 30mA, 8V 80mA Surface Mount SC-101, SOT-883 PG-TSLP-3-1 ROHS3 Compliant Active
BFR460L3E6327XTMA1 Infineon Technologies NPN 5.8V 22GHz 16dB 200mW 90 @ 20mA, 3V 50mA Surface Mount SC-101, SOT-883 PG-TSLP-3-1 ROHS3 Compliant Active
SMMBTH10-4LT3G onsemi NPN 25V 800MHz - 225mW 120 @ 4mA, 10V - Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) ROHS3 Compliant Active

Engineering Selection Recommendations

All substitute parts listed are RoHS3 compliant and present a similar transistor type (NPN) as the MRF1150MB. Selection must consider product status; only active parts should be chosen for new or ongoing designs. Parts denoted as obsolete should not be selected for new projects. Package type and mounting style must match system-level mechanical constraints and assembly processes.

Frequently Asked Questions (FAQ)

Q1: What technical criteria are used for identifying substitute transistor parts?
A1: Substitutes are strictly selected based on transistor type, voltage rating, power rating, collector current, gain, mounting type, package/case, and RoHS compliance.

Q2: Can surface-mount parts substitute for chassis-mount parts?
A2: Mounting type is a primary equivalence criterion. Only substitute parts matching required mechanical interfaces and package/case constraints can be considered directly equivalent.

Q3: Are all substitute parts operational drop-in replacements?
A3: Substitute status is based on provided parameters only. All other design-specific parameters must be cross-checked per application requirements.

Q4: How does part status affect substitute selection?
A4: Active status is essential for new or ongoing projects. Obsolete parts are included for reference but are not suitable for new designs.

Q5: Are all parts RoHS3 compliant?
A5: All substitutes listed are RoHS3 compliant as explicitly specified in the input data.

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