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MR856RL Equivalent & Substitute Parts
Part Overview
The MR856RL is a general-purpose rectifier diode manufactured by onsemi, rated for 600 V DC reverse voltage and 3 A average rectified current in an axial through-hole package. This part is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement.
The MR856RL features fast recovery characteristics with a reverse recovery time of 300 ns and operates across a junction temperature range of -65°C to 125°C. Due to its obsolete status and non-RoHS3 compliance, alternative parts with active product status and current regulatory compliance are required for new applications and ongoing production.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 600 | V |
| Current - Average Rectified (Io) | 3 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.25 | V @ 3 A |
| Reverse Recovery Time (trr) | 300 | ns |
| Current - Reverse Leakage @ Vr | 10 | µA @ 600 V |
| Speed Classification | Fast Recovery ≤ 500ns | - |
| Mounting Type | Through Hole | - |
| Package / Case | DO-201AA, DO-27, Axial | - |
| Operating Temperature - Junction | -65 to 125 | °C |
| RoHS Status | Non-compliant | - |
| Product Status | Obsolete | - |
Substitute Part Grouping Explanation
Substitution of the MR856RL is determined by strict equivalence across the following critical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3 A
- Mounting Type: Through Hole
- Package compatibility: DO-201AA, DO-27, or SOD-64 axial packages
Secondary Compatibility Factors:
- Voltage - Forward (Vf) (Max) @ If: ≤ 1.25 V @ 3 A (preferred) or within acceptable circuit tolerance
- Reverse Recovery Time (trr): ≤ 500 ns (fast recovery classification)
- Current - Reverse Leakage @ Vr: ≤ 10 µA @ 600 V
- Operating Temperature Range: Minimum -65°C to 125°C overlap required
Substitute parts are grouped into two categories:
Category 1: Direct Functional Equivalents (Active Status, RoHS3 Compliant) Parts that match all primary criteria with active product status and current regulatory compliance. These are preferred for new designs and production transitions.
Category 2: Functional Alternatives (Active Status, Compatible Parameters) Parts that meet primary electrical criteria but may have variations in secondary parameters such as forward voltage, reverse recovery time, or package designation. These are suitable where circuit design accommodates parameter variations.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ If [V] | trr [ns] | Ir @ Vr [µA] | Speed | Package | Product Status | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|
| MR856RL | onsemi | 600 | 3 | 1.25 @ 3A | 300 | 10 @ 600V | Fast Recovery ≤ 500ns | DO-201AA, DO-27 | Obsolete | Non-compliant |
| MR856RLG | onsemi | 600 | 3 | 1.25 @ 3A | 300 | 10 @ 600V | Fast Recovery ≤ 500ns | DO-201AA, DO-27 | Active | RoHS3 Compliant |
| EGP30J | onsemi | 600 | 3 | 1.7 @ 3A | 75 | 5 @ 600V | Fast Recovery ≤ 500ns | DO-201AD | Not For New Designs | RoHS3 Compliant |
| 1N5406-G | Comchip Technology | 600 | 3 | 1 @ 3A | - | 5 @ 600V | Standard Recovery >500ns | DO-201AD | Active | RoHS3 Compliant |
| 1N5406GP-AP | Micro Commercial Co | 600 | 3 | 1.1 @ 3A | - | 5 @ 600V | Standard Recovery >500ns | DO-201AD | Active | RoHS3 Compliant |
| 1N5406GP-TP | Micro Commercial Co | 600 | 3 | 1.1 @ 3A | - | 5 @ 600V | Standard Recovery >500ns | DO-201AD | Active | RoHS3 Compliant |
| 1N5626-TAP | Vishay General Semiconductor - Diodes Division | 600 | 3 | 1 @ 3A | 7500 | 1 @ 200V | Standard Recovery >500ns | SOD-64 | Active | RoHS3 Compliant |
| BYM36C-TAP | Vishay General Semiconductor - Diodes Division | 600 | 3 | 1.6 @ 3A | 100 | 5 @ 600V | Fast Recovery ≤ 500ns | SOD-64 | Active | RoHS3 Compliant |
| BYT56J-TAP | Vishay General Semiconductor - Diodes Division | 600 | 3 | 1.4 @ 3A | 100 | 5 @ 600V | Fast Recovery ≤ 500ns | SOD-64 | Active | RoHS3 Compliant |
| BYT56J-TR | Vishay General Semiconductor - Diodes Division | 600 | 3 | 1.4 @ 3A | 100 | 5 @ 600V | Fast Recovery ≤ 500ns | SOD-64 | Active | RoHS3 Compliant |
| 60S6-TP | Micro Commercial Co | 600 | 6 | 1 @ 6A | - | 5 @ 600V | Standard Recovery >500ns | DO-201AD | Active | RoHS3 Compliant |
Engineering Selection Recommendations
Recommended Primary Substitute: MR856RLG
The MR856RLG is the direct successor to the MR856RL, manufactured by onsemi. It provides identical electrical specifications across all critical parameters: 600 V reverse voltage, 3 A average rectified current, 1.25 V forward voltage at 3 A, and 300 ns reverse recovery time. The MR856RLG maintains the same DO-201AA and DO-27 axial package compatibility, ensuring direct mechanical and electrical interchangeability. The part holds active product status and is RoHS3 compliant, addressing the regulatory limitations of the obsolete MR856RL. This substitution requires no circuit redesign or validation.
Secondary Substitutes for Active Designs:
1N5406GP-AP and 1N5406GP-TP (Micro Commercial Co) are suitable alternatives where circuit design accommodates standard recovery characteristics. Both parts meet the 600 V / 3 A electrical requirements with forward voltage of 1.1 V at 3 A, which is lower than the MR856RL specification. These parts are available in DO-201AD packages and hold active product status with RoHS3 compliance. The standard recovery classification (>500 ns) differs from the MR856RL fast recovery specification; circuit validation is required to confirm compatibility with switching frequency and transient response requirements.
BYT56J-TAP and BYT56J-TR (Vishay General Semiconductor - Diodes Division) provide fast recovery characteristics (100 ns trr) with 600 V / 3 A ratings. These avalanche-type diodes are packaged in SOD-64 axial format and are active with RoHS3 compliance. Forward voltage is 1.4 V at 3 A. The SOD-64 package differs from the MR856RL DO-27 package; mechanical redesign of the circuit board layout is required. These parts are suitable for applications requiring avalanche protection and fast switching performance.
BYM36C-TAP (Vishay General Semiconductor - Diodes Division) offers fast recovery (100 ns trr) with 600 V / 3 A specifications in SOD-64 package. Forward voltage is 1.6 V at 3 A. This avalanche diode is active and RoHS3 compliant. Package redesign is required due to SOD-64 format.
1N5626-TAP (Vishay General Semiconductor - Diodes Division) is an avalanche diode with 600 V / 3 A ratings and 1 V forward voltage at 3 A. Reverse recovery time is 7.5 µs, significantly longer than the MR856RL. This part is suitable only for applications where switching speed is not critical. SOD-64 package requires mechanical redesign.
60S6-TP (Micro Commercial Co) is rated for 600 V / 6 A, exceeding the MR856RL current specification. This part is suitable only where higher current capacity is required and circuit design accommodates the increased current rating. DO-201AD package is compatible with MR856RL mechanical footprint. Standard recovery classification applies.
EGP30J (onsemi) is classified as "Not For New Designs" and is not recommended for new applications despite RoHS3 compliance and active inventory status.
Frequently Asked Questions (FAQ)
Q: Can MR856RLG be used as a direct replacement for MR856RL without circuit modification?
A: Yes. The MR856RLG is electrically and mechanically identical to the MR856RL across all specified parameters. It is a direct pin-for-pin and functional replacement. No circuit redesign or validation is required. The primary difference is product status (active vs. obsolete) and RoHS3 compliance.
Q: What is the difference between fast recovery and standard recovery diodes in the substitute list?
A: Fast recovery diodes have reverse recovery time ≤ 500 ns, while standard recovery diodes exceed 500 ns. The MR856RL specifies 300 ns (fast recovery). Substitutes with standard recovery characteristics (such as 1N5406GP-AP and 1N5406GP-TP) may introduce switching delays and increased reverse current transients. Circuit validation is required to confirm compatibility with application switching frequency and transient specifications.
Q: Why do some substitutes have different forward voltage specifications?
A: Forward voltage varies with diode technology, doping profile, and junction design. The MR856RL specifies 1.25 V at 3 A. Substitutes range from 1.0 V to 1.7 V at 3 A. Lower forward voltage reduces power dissipation; higher forward voltage increases heat generation. Circuit design must accommodate the forward voltage of the selected substitute to ensure proper voltage regulation and thermal performance.
Q: Are SOD-64 package diodes compatible with DO-27 circuit board layouts?
A: No. SOD-64 and DO-27 are different physical packages with different lead spacing and dimensions. Substitutes using SOD-64 packages (BYT56J-TAP, BYT56J-TR, BYM36C-TAP, 1N5626-TAP) require circuit board redesign and new PCB layout. DO-201AD packages (1N5406GP-AP, 1N5406GP-TP, 60S6-TP, EGP30J) are mechanically compatible with DO-27 footprints in most applications.
Q: What does RoHS3 compliance mean for the MR856RL substitution?
A: The MR856RL is RoHS non-compliant, indicating it may contain restricted substances such as lead or cadmium. RoHS3-compliant substitutes (MR856RLG, 1N5406GP-AP, 1N5406GP-TP, BYT56J-TAP, BYT56J-TR, BYM36C-TAP, 1N5626-TAP, 60S6-TP) meet current European Union and similar regulatory requirements for hazardous substance restrictions. For applications subject to RoHS regulations, only RoHS3-compliant substitutes are acceptable.
Q: Can 60S6-TP be used in place of MR856RL?
A: 60S6-TP is rated for 600 V / 6 A, which exceeds the MR856RL 3 A specification. It can be used only if the application circuit design accommodates the higher current rating. The part is not a direct substitute; it is an over-rated alternative. Standard recovery characteristics (>500 ns) differ from the MR856RL fast recovery specification. Circuit validation is required.
Q: What is the significance of reverse leakage current in substitute selection?
A: Reverse leakage current (Ir) determines the diode's blocking capability and heat generation during reverse bias. The MR856RL specifies 10 µA at 600 V. Most substitutes specify 5 µA at 600 V, indicating lower leakage and improved blocking performance. Lower reverse leakage reduces standby power dissipation and improves circuit efficiency. This is a favorable characteristic in substitutes.
Q: Is EGP30J a suitable substitute for MR856RL?
A: EGP30J meets the 600 V / 3 A electrical requirements and is RoHS3 compliant. However, it is classified as "Not For New Designs," indicating onsemi does not recommend it for new applications. While it may be used in legacy system maintenance, MR856RLG is the preferred active substitute for all new and ongoing designs.
Q: What is the operating temperature range consideration for substitutes?
A: The MR856RL operates from -65°C to 125°C. Most substitutes extend the upper temperature limit to 150°C or 175°C, providing improved thermal margin. Some substitutes (1N5406GP-AP, 1N5406GP-TP, 60S6-TP) operate from -55°C to 150°C, which is acceptable if the application minimum temperature requirement is -55°C or higher. Verify application temperature requirements before final selection.
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