MR850 Equivalent & Substitute Parts

Part Overview

The MR850 is a general-purpose rectifier diode rated for 50 V DC reverse voltage and 3 A average rectified current, manufactured by onsemi in DO-201AA/DO-27 axial package configuration. This device features fast recovery characteristics with a reverse recovery time of 300 ns and operates across a junction temperature range of -65°C to 125°C.

The MR850 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production, repair, and maintenance applications. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package and technology variations.

Key Parameters

Parameter	MR850 Specification
Voltage - DC Reverse (Vr) (Max)	50 V
Current - Average Rectified (Io)	3 A
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 3 A
Speed Classification	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr)	300 ns
Current - Reverse Leakage @ Vr	10 µA @ 50 V
Mounting Type	Through Hole
Package / Case	DO-201AA, DO-27, Axial
Operating Temperature - Junction	-65°C ~ 125°C
Technology	Standard
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the MR850 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a DC reverse voltage rating of 50 V or greater to ensure safe operation within the original design envelope.

Current Rating: All substitute parts must support an average rectified current of 3 A or greater to meet load requirements.

Mounting Type: All substitute parts must be through-hole mounted to maintain mechanical compatibility with existing PCB layouts.

Package Compatibility: Substitute parts are grouped by package type: DO-201AD (equivalent to DO-201AA), DO-27 axial, and SOD-64 axial. Package selection depends on PCB footprint requirements.

Recovery Characteristics: Substitute parts are classified as either fast recovery (≤ 500 ns) or standard recovery (> 500 ns). Fast recovery devices provide superior switching performance in high-frequency applications.

Technology Type: Substitute parts are available in standard rectifier or avalanche diode technology. Avalanche diodes provide additional overvoltage protection.

Compliance Status: Active product status and RoHS3 compliance are preferred for new designs. Obsolete parts are acceptable only for legacy system maintenance.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io (A)	Vf @ 3A (Max)	Recovery Type	trr (ns)	Package	Status	RoHS
MR850	onsemi	50 V	3	1.25 V	Fast (≤500ns)	300	DO-201AA/DO-27	Obsolete	Non-compliant
1N5400G	Taiwan Semiconductor Corporation	50 V	3	1.1 V	Standard (>500ns)	—	DO-201AD	Active	ROHS3
EGP30A	Fairchild Semiconductor	50 V	3	950 mV	Fast (≤500ns)	50	DO-201AD	Active	ROHS3
MR851G	onsemi	100 V	3	1.25 V	Fast (≤500ns)	300	DO-201AA/DO-27	Active	ROHS3
1N5400-E3/54	Vishay General Semiconductor - Diodes Division	50 V	3	1.2 V	Standard (>500ns)	—	DO-201AD	Active	ROHS3
1N5400-G	Comchip Technology	50 V	3	1.0 V	Standard (>500ns)	—	DO-201AD	Active	ROHS3
1N5400GP-AP	Micro Commercial Co	50 V	3	1.1 V	Standard (>500ns)	—	DO-201AD	Active	ROHS3
BYT56A-TAP	Vishay General Semiconductor - Diodes Division	50 V	3	1.4 V	Fast (≤500ns)	100	SOD-64	Active	ROHS3
BYT56A-TR	Vishay General Semiconductor - Diodes Division	50 V	3	1.4 V	Fast (≤500ns)	100	SOD-64	Active	ROHS3
FR301GP-AP	Micro Commercial Co	50 V	3	1.3 V	Fast (≤500ns)	150	DO-201AD	Active	ROHS3
GI500-E3/54	Vishay General Semiconductor - Diodes Division	50 V	3	1.1 V @ 9.4A	Standard (>500ns)	2000	DO-201AD	Active	ROHS3

Engineering Selection Recommendations

For Direct Replacement (Same Package, Same Voltage Rating)

The MR851G from onsemi provides the closest functional equivalent to the MR850. Both devices share identical fast recovery characteristics (300 ns trr), matching forward voltage drop (1.25 V @ 3 A), and identical package configuration (DO-201AA/DO-27 axial). The MR851G is rated for 100 V reverse voltage, providing enhanced overvoltage margin. The MR851G is active and RoHS3 compliant, making it suitable for new production designs.

For Standard Recovery Applications (50 V Rating, DO-201AD Package)

The 1N5400-E3/54 (Vishay), 1N5400-G (Comchip), 1N5400GP-AP (Micro Commercial Co), and 1N5400G (Taiwan Semiconductor Corporation) all meet the 50 V / 3 A electrical specification with standard recovery characteristics. These devices are packaged in DO-201AD format, which is mechanically compatible with DO-201AA footprints. All are active products with RoHS3 compliance. Forward voltage drops range from 1.0 V to 1.2 V at 3 A, representing improved efficiency compared to the MR850. These parts are suitable for applications where switching speed is not critical.

For Fast Recovery Applications (50 V Rating, DO-201AD Package)

The EGP30A (Fairchild Semiconductor) and FR301GP-AP (Micro Commercial Co) provide fast recovery performance in DO-201AD package format. The EGP30A offers the lowest forward voltage drop (950 mV @ 3 A) and fastest recovery time (50 ns), delivering superior efficiency and switching performance. The FR301GP-AP provides moderate recovery time (150 ns) with 1.3 V forward voltage drop. Both are active and RoHS3 compliant.

For Avalanche Technology (50 V Rating, SOD-64 Package)

The BYT56A-TAP and BYT56A-TR (Vishay) provide avalanche diode technology with 50 V rating and 3 A current capacity. These devices feature fast recovery (100 ns) and extended operating temperature range (-55°C to 175°C). The SOD-64 package is mechanically distinct from axial packages and requires PCB footprint modification. Both are active and RoHS3 compliant.

For Higher Voltage Applications

The MR851G (100 V rating) is recommended when circuit design requires enhanced overvoltage protection or when operating margins must accommodate transient voltage spikes.

Frequently Asked Questions (FAQ)

Q: Can I use a 1N5400 series diode as a direct replacement for the MR850?

A: Yes, with package considerations. The 1N5400 series (1N5400G, 1N5400-E3/54, 1N5400-G, 1N5400GP-AP) meets the 50 V / 3 A electrical specification. However, these devices use DO-201AD package format instead of the MR850's DO-201AA/DO-27 axial package. DO-201AD and DO-201AA are mechanically compatible with equivalent lead spacing and through-hole mounting. Verify PCB footprint compatibility before substitution.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to reverse recovery time (trr), the interval required for a diode to transition from forward conduction to reverse blocking. Fast recovery diodes (≤ 500 ns) are optimized for high-frequency switching applications and reduce switching losses. Standard recovery diodes (> 500 ns) are suitable for low-frequency rectification and power supply applications. The MR850 specifies fast recovery (300 ns). Standard recovery substitutes are acceptable only in applications where switching frequency does not exceed the device's recovery capability.

Q: Is the MR851G a suitable replacement for the MR850?

A: Yes. The MR851G maintains identical package format (DO-201AA/DO-27 axial), identical fast recovery characteristics (300 ns), and identical forward voltage drop (1.25 V @ 3 A). The MR851G is rated for 100 V reverse voltage compared to the MR850's 50 V rating, providing additional overvoltage margin. The MR851G is active and RoHS3 compliant. This substitution is recommended for new designs.

Q: Can I substitute an avalanche diode (BYT56A series) for the MR850?

A: Electrical substitution is valid. The BYT56A-TAP and BYT56A-TR meet the 50 V / 3 A specification with fast recovery performance (100 ns). However, the SOD-64 package is mechanically distinct from the MR850's axial package and requires PCB footprint redesign. Avalanche diodes provide additional overvoltage clamping capability, which may be beneficial in circuits subject to transient voltage spikes. Verify mechanical compatibility and thermal management before implementation.

Q: What does RoHS3 compliance mean for component selection?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates that the component meets European Union restrictions on hazardous materials, specifically lead, cadmium, mercury, hexavalent chromium, and certain brominated flame retardants. RoHS3 compliant parts are required for new product designs destined for European markets and are increasingly required globally. The MR850 is RoHS non-compliant. All listed substitute parts except the MR850 are RoHS3 compliant.

Q: How do I select between multiple 50 V / 3 A substitute options?

A: Selection depends on application requirements. For high-frequency switching circuits, choose fast recovery devices (EGP30A, FR301GP-AP, BYT56A series). For low-frequency rectification, standard recovery devices (1N5400 series) provide cost efficiency. For overvoltage protection, select avalanche technology (BYT56A series). For thermal management in high-temperature environments, verify operating temperature range. For new designs, prioritize active products with RoHS3 compliance.

Q: Are there package compatibility issues between DO-201AA and DO-201AD?

A: DO-201AA and DO-201AD are mechanically compatible axial package formats with equivalent lead spacing (0.4 inches / 10.16 mm) and through-hole mounting requirements. PCB footprints designed for DO-201AA accept DO-201AD devices without modification. Both package designations refer to standard axial lead diode packages suitable for through-hole assembly.

Q: What is the significance of forward voltage drop (Vf) differences between substitute parts?

A: Forward voltage drop directly affects power dissipation and circuit efficiency. Lower Vf values reduce heat generation and improve power supply efficiency. The MR850 specifies 1.25 V @ 3 A. Substitute parts range from 950 mV (EGP30A) to 1.4 V (BYT56A series). In high-current applications, Vf differences accumulate to measurable power loss. Select lower Vf devices for efficiency-critical applications and thermal-constrained designs.

Q: Can I use the GI500-E3/54 as a substitute for the MR850?

A: Electrical substitution is valid. The GI500-E3/54 meets the 50 V / 3 A specification. However, this device specifies forward voltage at 9.4 A (1.1 V) rather than 3 A, and features extended reverse recovery time (2 µs) characteristic of standard recovery devices. The GI500-E3/54 is optimized for lower-frequency applications. Verify that circuit switching frequency and thermal management accommodate the longer recovery time before substitution.

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