MPSW55G Equivalent & Substitute Parts

Part Overview

The MPSW55G is a PNP bipolar junction transistor manufactured by onsemi, rated for 60V collector-emitter breakdown voltage and 500mA maximum collector current in a through-hole TO-92 package. This component is classified as obsolete, necessitating identification of equivalent substitute parts for new designs and ongoing production requirements. Active equivalent devices are available from both onsemi and Fairchild Semiconductor that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	-
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	1	W
Frequency - Transition	50	MHz
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package / Case	TO-92-3	-

Substitute Part Grouping Explanation

Substitution of the MPSW55G is determined by the following critical parameters:

Electrical Compatibility Requirements:

Transistor type must be PNP
Voltage rating must equal or exceed 60V collector-emitter breakdown
Current rating must equal or exceed 500mA maximum collector current
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

Package type must be compatible with through-hole or surface-mount footprints as application permits
Pin configuration must match TO-92-3 or equivalent three-terminal topology

Substitution Categories:

Direct Through-Hole Replacement: Parts maintaining TO-92-3 package format with equivalent or superior electrical ratings
Surface-Mount Equivalent: Parts with identical electrical specifications in alternative package formats (SOT-23-3) for applications permitting PCB redesign

Parameter Comparison

Parameter	MPSW55G	2N4403BU	2N3906BU	MMBTA55LT1G
Manufacturer	onsemi	Fairchild Semiconductor	Fairchild Semiconductor	onsemi
Product Status	Obsolete	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	60V	40V	40V	60V
Current - Collector (Ic) (Max)	500mA	600mA	200mA	500mA
Power - Max	1W	625mW	625mW	225mW
Frequency - Transition	50MHz	200MHz	250MHz	50MHz
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Surface Mount
Package / Case	TO-92-3	TO-92-3	TO-92-3	SOT-23-3

Engineering Selection Recommendations

MMBTA55LT1G (onsemi): This part is the preferred direct electrical equivalent, manufactured by the same supplier as the MPSW55G. It maintains identical voltage (60V) and current (500mA) ratings with matching frequency response (50MHz) and operating temperature range. The device is active and ROHS3 compliant. The primary distinction is the surface-mount SOT-23-3 package format, which requires PCB redesign but offers superior thermal performance (225mW vs. 1W) and higher inventory availability (125,400 units). This substitution is suitable for new designs or production runs permitting layout modification.

2N4403BU (Fairchild Semiconductor): This part provides active product status with superior current handling (600mA) and higher transition frequency (200MHz). However, the voltage rating is limited to 40V, which is below the MPSW55G specification of 60V. This part is suitable only for applications where the actual operating voltage does not exceed 40V. The through-hole TO-92-3 package maintains mechanical compatibility with the original design. Inventory availability is substantial (69,662 units).

2N3906BU (Fairchild Semiconductor): This part is not recommended as a direct substitute. Although it maintains the through-hole TO-92-3 package and 40V voltage rating, the maximum collector current is limited to 200mA, which is insufficient for the MPSW55G specification of 500mA. This part is suitable only for applications requiring reduced current capacity.

Frequently Asked Questions (FAQ)

Q: Can the MMBTA55LT1G replace the MPSW55G in existing through-hole designs without PCB modification?

A: No. The MMBTA55LT1G uses a surface-mount SOT-23-3 package, while the MPSW55G uses a through-hole TO-92-3 package. Direct board-level substitution is not possible without PCB redesign. However, the electrical specifications are identical, making this the preferred substitute for new designs.

Q: Is the 2N4403BU suitable for all MPSW55G applications?

A: The 2N4403BU is suitable only for applications where the actual operating voltage does not exceed 40V. The MPSW55G is rated for 60V breakdown voltage, while the 2N4403BU is rated for 40V. Applications operating at voltages between 40V and 60V require the MMBTA55LT1G or equivalent 60V-rated device.

Q: What is the primary advantage of the MMBTA55LT1G over the MPSW55G?

A: The MMBTA55LT1G is an active product with current manufacturing support, whereas the MPSW55G is obsolete. Additionally, the MMBTA55LT1G offers ROHS3 compliance and significantly higher inventory availability. The surface-mount package provides improved thermal characteristics and reduced board space requirements in new designs.

Q: Can the 2N3906BU be used in low-current applications where the MPSW55G was originally specified?

A: The 2N3906BU is limited to 200mA maximum collector current. If the application requires less than 200mA and operates below 40V, the 2N3906BU is functionally compatible. However, the MMBTA55LT1G or 2N4403BU are preferred substitutes as they maintain the full 500mA current rating of the original MPSW55G.

Q: Are all substitute parts rated for the same operating temperature range as the MPSW55G?

A: Yes. All substitute parts listed (2N4403BU, 2N3906BU, and MMBTA55LT1G) are rated for -55°C to 150°C operating temperature, matching the MPSW55G specification.

Q: What compliance certifications apply to the substitute parts?

A: The MMBTA55LT1G is ROHS3 compliant. All listed parts (MPSW55G, 2N4403BU, 2N3906BU, and MMBTA55LT1G) are classified as REACH unaffected and carry EAR99 ECCN designation.

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