MPSW55 Equivalent & Substitute Parts

Part Overview

The MPSW55 is a PNP bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 500 mA maximum collector current. The device is packaged in a TO-92 through-hole configuration and is rated for 1 W maximum power dissipation with a 50 MHz transition frequency. The MPSW55 is classified as obsolete, necessitating identification of active substitute components for new designs and ongoing production requirements. Equivalent parts must maintain functional compatibility within the electrical and mechanical constraints of the original specification.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	1	W
Frequency - Transition	50	MHz
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—
Operating Temperature Range	-55 to 150	°C

Substitute Part Grouping Explanation

Substitution of the MPSW55 is determined by the following critical electrical and mechanical parameters:

Mandatory Compatibility Criteria:

Transistor type must be PNP
Mounting type must be through-hole
Package must be TO-92-3 compatible
Operating temperature range must encompass -55°C to 150°C

Functional Compatibility Criteria:

Collector-emitter breakdown voltage must be greater than or equal to 60 V
Maximum collector current must be greater than or equal to 500 mA
Maximum power dissipation must be greater than or equal to 1 W

The identified substitute parts are evaluated against these criteria. Parts with lower voltage or current ratings do not meet the mandatory functional requirements and are classified as restricted substitutes suitable only for applications operating within their reduced specifications.

Parameter Comparison

Parameter	MPSW55 (onsemi)	2N4403BU (Fairchild)	2N3906BU (Fairchild)
Transistor Type	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	60 V	40 V	40 V
Current - Collector (Ic) (Max)	500 mA	600 mA	200 mA
Power - Max	1 W	625 mW	625 mW
Frequency - Transition	50 MHz	200 MHz	250 MHz
Vce Saturation (Max)	500 mV @ 10 mA, 250 mA	750 mV @ 50 mA, 500 mA	400 mV @ 5 mA, 50 mA
DC Current Gain (hFE) (Min)	50 @ 250 mA, 1 V	100 @ 150 mA, 2 V	100 @ 10 mA, 1 V
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

2N4403BU (Fairchild Semiconductor): This part is classified as an active product with full availability. The 2N4403BU meets or exceeds the collector current requirement (600 mA vs. 500 mA) and maintains identical operating temperature range. However, the collector-emitter breakdown voltage is reduced to 40 V, which is below the MPSW55 specification of 60 V. The maximum power dissipation is also reduced to 625 mW. The 2N4403BU is suitable for applications where the circuit operates at voltages not exceeding 40 V and power dissipation remains below 625 mW. Direct pin-compatible substitution is mechanically feasible due to identical TO-92-3 packaging.

2N3906BU (Fairchild Semiconductor): This part is classified as an active product with full availability. The 2N3906BU maintains identical operating temperature range and TO-92-3 packaging. However, the maximum collector current is reduced to 200 mA, the collector-emitter breakdown voltage is reduced to 40 V, and maximum power dissipation is 625 mW. The 2N3906BU is suitable only for applications requiring collector currents not exceeding 200 mA and operating voltages not exceeding 40 V. This part does not meet the full electrical specification of the MPSW55.

For applications requiring the full electrical specification of the MPSW55 (60 V, 500 mA, 1 W), neither substitute part provides complete functional equivalence. Selection of substitute parts must be based on the actual circuit requirements and operating conditions.

Frequently Asked Questions (FAQ)

Q: Can the 2N4403BU be used as a direct replacement for the MPSW55 in all applications?

A: No. While the 2N4403BU is pin-compatible in TO-92-3 packaging, it has a reduced collector-emitter breakdown voltage of 40 V compared to the MPSW55 specification of 60 V. Substitution is valid only for circuits operating at voltages not exceeding 40 V.

Q: What is the primary limitation of the 2N3906BU as a substitute for the MPSW55?

A: The 2N3906BU has a maximum collector current rating of 200 mA, which is significantly below the MPSW55 requirement of 500 mA. This part is unsuitable for applications requiring higher collector currents.

Q: Are both substitute parts mechanically compatible with the MPSW55?

A: Yes. Both the 2N4403BU and 2N3906BU use the TO-92-3 package, which is mechanically and pin-compatible with the MPSW55. Through-hole mounting characteristics are identical.

Q: What is the product status difference between the MPSW55 and the substitute parts?

A: The MPSW55 is classified as obsolete, while both the 2N4403BU and 2N3906BU are active products with current manufacturing and distribution support.

Q: Can I use the 2N4403BU in a circuit designed for 60 V operation?

A: No. The 2N4403BU has a maximum collector-emitter breakdown voltage of 40 V. Using it in a 60 V circuit exceeds its voltage rating and may result in device failure.

Q: What parameters must be verified before selecting a substitute part?

A: The circuit's maximum operating voltage, required collector current, and power dissipation must be compared against the substitute part's ratings. The substitute part must meet or exceed all three parameters for direct substitution.

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