MPSW13RLRA Equivalent & Substitute Parts

Part Overview

The MPSW13RLRA is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 1 A, collector-emitter breakdown voltage of 30 V, and operates across a temperature range of -55°C to 150°C. The component is packaged in a Through Hole TO-92 (TO-226-3) configuration with long formed leads.

The MPSW13RLRA is classified as obsolete. Identifying equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and applications currently utilizing this component.

Substiute Parts

MPSW13RLRA
onsemiIn Stock: 7407MPSW13RLRA Datasheet
MPSW13RLRA
Current Part
KSP13TA
onsemiIn Stock: 1968KSP13TA Datasheet
KSP13TA
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
Power - Max 1 W
Frequency - Transition 125 MHz
Operating Temperature -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3

Substitute Part Grouping Explanation

Substitute parts for the MPSW13RLRA are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following parameters:

Critical Matching Parameters:

  • Transistor Type: NPN - Darlington configuration
  • Voltage - Collector Emitter Breakdown (Max): 30 V minimum
  • DC Current Gain (hFE): 10000 @ 100mA, 5V minimum
  • Vce Saturation: 1.5V @ 100µA, 100mA
  • Frequency - Transition: 125 MHz minimum
  • Mounting Type: Through Hole
  • Package / Case: TO-92-3 compatible

Allowable Variation Parameters:

  • Current - Collector (Ic) (Max): Equal or greater than required application current
  • Power - Max: Equal or greater than required application power dissipation
  • Operating Temperature: Must encompass application requirements

The KSP13TA meets all critical matching parameters and is therefore classified as a direct substitute. The KSP13TA exhibits reduced maximum collector current (500 mA versus 1 A) and power dissipation (625 mW versus 1 W), making it suitable for applications requiring lower current and power specifications within the same electrical and thermal envelope.

Parameter Comparison

Parameter MPSW13RLRA KSP13TA Unit
Manufacturer onsemi onsemi
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 1 0.5 A
Voltage - Collector Emitter Breakdown (Max) 30 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 1 0.625 W
Frequency - Transition 125 125 MHz
Operating Temperature (Max) 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 TO-226-3, TO-92-3
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

MPSW13RLRA (Original Part): The MPSW13RLRA is classified as obsolete and is not recommended for new designs. The component is RoHS non-compliant, which restricts its use in applications subject to environmental and regulatory compliance requirements. However, 7300 units are currently in stock and available for legacy system support and repair applications where regulatory compliance is not a constraint.

KSP13TA (Substitute Part): The KSP13TA is the recommended substitute for the MPSW13RLRA. This part is classified as active and is ROHS3 compliant, making it suitable for new designs and applications requiring regulatory compliance. The KSP13TA maintains electrical equivalence across all critical parameters: identical collector-emitter breakdown voltage (30 V), DC current gain (10000 @ 100mA, 5V), saturation voltage (1.5V @ 100µA, 100mA), and transition frequency (125 MHz).

The KSP13TA exhibits reduced maximum collector current (500 mA versus 1 A) and power dissipation (625 mW versus 1 W). Selection of the KSP13TA is appropriate for applications where the required collector current does not exceed 500 mA and power dissipation does not exceed 625 mW. For applications requiring the full 1 A collector current or 1 W power dissipation capability of the MPSW13RLRA, alternative parts must be evaluated.

Both parts share identical TO-92-3 Through Hole packaging, enabling direct mechanical and electrical substitution within the specified current and power constraints.

Frequently Asked Questions (FAQ)

Q: Can the KSP13TA directly replace the MPSW13RLRA in all applications?

A: The KSP13TA is electrically equivalent to the MPSW13RLRA across all critical parameters (voltage, gain, saturation characteristics, and frequency response). However, the KSP13TA has reduced maximum collector current (500 mA versus 1 A) and power dissipation (625 mW versus 1 W). Direct substitution is valid only for applications where the required collector current does not exceed 500 mA and power dissipation does not exceed 625 mW.

Q: Are the MPSW13RLRA and KSP13TA pin-compatible?

A: Yes. Both devices are packaged in TO-92-3 (TO-226-3) Through Hole configuration with identical pin assignments. No circuit board modifications are required for mechanical substitution.

Q: What is the difference in RoHS compliance between these parts?

A: The MPSW13RLRA is RoHS non-compliant, while the KSP13TA is ROHS3 compliant. For applications subject to environmental regulations or customer requirements mandating RoHS compliance, the KSP13TA is the required choice.

Q: Why is the MPSW13RLRA classified as obsolete?

A: The MPSW13RLRA is no longer in active production. The manufacturer has transitioned to the KSP13TA as the active equivalent product. Existing inventory remains available for legacy system support.

Q: What are the key electrical parameters that determine substitution eligibility?

A: Substitution eligibility is determined by the following parameters: transistor type (NPN - Darlington), collector-emitter breakdown voltage (30 V), DC current gain (10000 @ 100mA, 5V), saturation voltage (1.5V @ 100µA, 100mA), and transition frequency (125 MHz). All substitute parts must meet or exceed these specifications.

Q: Can I use the KSP13TA in an application requiring 1 A collector current?

A: No. The KSP13TA has a maximum collector current rating of 500 mA. Using this part in an application requiring 1 A would exceed the device's absolute maximum rating and result in component failure. Alternative parts with 1 A or greater collector current capability must be identified for such applications.

Q: Are there temperature range differences between the MPSW13RLRA and KSP13TA?

A: Both parts support a maximum operating temperature of 150°C. The MPSW13RLRA specifies a minimum operating temperature of -55°C, while the KSP13TA does not specify a minimum temperature in the provided data. For applications requiring operation below -55°C, the MPSW13RLRA specifications should be verified against application requirements.

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