MPSW01G Equivalent & Substitute Parts

Part Overview

The MPSW01G is an NPN bipolar junction transistor manufactured by onsemi, rated for 30V collector-emitter breakdown voltage and 1A maximum collector current. This device is packaged in a TO-92 through-hole configuration and is designed for general-purpose switching and amplification applications. The MPSW01G is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity.

Substiute Parts

MPSW01G
onsemiIn Stock: 19432MPSW01G Datasheet
MPSW01G
Current Part
ZTX849
Diodes IncorporatedIn Stock: 15897ZTX849 Datasheet
ZTX849
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 30 V
Current - Collector (Ic) (Max) 1 A
Power - Max 1 W
Frequency - Transition 50 MHz
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the MPSW01G is determined by electrical and mechanical compatibility within the following parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Voltage - Collector Emitter Breakdown (Max) must be greater than or equal to 30V
  • Current - Collector (Ic) (Max) must be greater than or equal to 1A
  • Power dissipation capability must be greater than or equal to 1W
  • Operating temperature range must encompass or exceed -55°C to 150°C

Mechanical Compatibility Criteria:

  • Mounting type must be Through Hole
  • Package must be physically compatible with TO-92 footprint

The ZTX849 meets all substitution criteria. It provides enhanced electrical performance with higher current rating (5A), improved frequency response (100MHz), and extended temperature range (-55°C to 200°C), while maintaining mechanical compatibility through its E-Line package configuration, which is TO-92 compatible.

Parameter Comparison

Parameter MPSW01G (onsemi) ZTX849 (Diodes Incorporated) Unit
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 30 30 V
Current - Collector (Ic) (Max) 1 5 A
Vce Saturation (Max) 500mV @ 100mA, 1A 220mV @ 200mA, 5A mV
Current - Collector Cutoff (Max) 100nA 50nA nA
DC Current Gain (hFE) (Min) 60 @ 100mA, 1V 100 @ 1A, 1V
Power - Max 1 1.2 W
Frequency - Transition 50 100 MHz
Operating Temperature Range -55 to 150 -55 to 200 °C
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 E-Line-3 (TO-92 compatible)

Engineering Selection Recommendations

The MPSW01G is classified as obsolete, necessitating the use of active substitute components for new designs and production support.

ZTX849 Selection Basis:

The ZTX849 manufactured by Diodes Incorporated is an active product with ROHS3 compliance and REACH unaffected status. This substitute meets all minimum electrical requirements of the MPSW01G while providing enhanced performance specifications. The ZTX849 exceeds the MPSW01G in collector current capacity (5A versus 1A), transition frequency (100MHz versus 50MHz), and maximum power dissipation (1.2W versus 1W). The extended operating temperature range (-55°C to 200°C) provides additional thermal margin compared to the MPSW01G (-55°C to 150°C).

The E-Line package of the ZTX849 is mechanically compatible with TO-92 footprints, enabling direct substitution in existing through-hole PCB layouts without modification. Both devices maintain identical collector-emitter breakdown voltage (30V) and NPN polarity, ensuring functional equivalence in circuit applications.

Frequently Asked Questions (FAQ)

Q: Can the ZTX849 be used as a direct replacement for the MPSW01G in existing designs?

A: Yes. The ZTX849 is electrically and mechanically compatible with the MPSW01G. The E-Line package is TO-92 compatible, allowing direct substitution in through-hole PCB layouts. The ZTX849 meets or exceeds all electrical specifications of the MPSW01G.

Q: What are the key differences between the MPSW01G and ZTX849?

A: The ZTX849 provides higher collector current capacity (5A versus 1A), faster transition frequency (100MHz versus 50MHz), lower saturation voltage (220mV versus 500mV), and extended operating temperature range (-55°C to 200°C versus -55°C to 150°C). Both devices share identical 30V collector-emitter breakdown voltage and NPN configuration.

Q: Are there any package compatibility concerns when substituting the ZTX849 for the MPSW01G?

A: No. The ZTX849 E-Line package is specified as TO-92 compatible, ensuring mechanical and electrical compatibility with existing MPSW01G PCB footprints and through-hole mounting requirements.

Q: What is the product status difference between these devices?

A: The MPSW01G is classified as obsolete, while the ZTX849 is an active product. This makes the ZTX849 the appropriate choice for ongoing production and new design implementations.

Q: Do both devices have equivalent compliance certifications?

A: Both the MPSW01G and ZTX849 are REACH unaffected and classified under ECCN EAR99. The ZTX849 additionally carries ROHS3 compliance certification. Both devices have moisture sensitivity level (MSL) rating of 1 (unlimited).

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